SPD09P06PL [INFINEON]
SIPMOS Power-Transistor; SIPMOS功率三极管
| 型号： | SPD09P06PL |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power-Transistor |
| 文件： | 总8页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD09P06PL
SPU09P06PL
Final data
SIPMOS =Power-Transistor
Product Summary
Feature
V
-60
0.25
-9.7
V
DS
P-Channel
Enhancement mode
Logic Level
R
I
A
D
P-TO251-3-1
P-TO252
175°C operating temperature
Avalanche rated
dv/dt rated
Drain
pin 2
Gate
pin1
Type
SPD09P06PL
Package
P-TO252
Ordering Code
Q67042-S4007
Source
pin 3
SPU09P06PL
P-TO251-3-1 Q67042-S4020
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
-9.7
-6.8
C
T =100°C
C
-38.8
Pulsed drain current
I
D puls
T =25°C
C
70
mJ
Avalanche energy, single pulse
E
AS
I =-9.7 A , V =-25V, R =25
D
DD GS
E
4.2
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =-9.7A, V =-48, di/dt=200A/µs, T
DS jmax
=175°C
S
Gate source voltage
Power dissipation
V
V
W
±20
42
GS
P
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
Page 1
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
R
-
-
-
-
3.6 K/W
100
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
75
50
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
-60
-1
typ. max.
Static Characteristics
Drain-source breakdown voltage
V
-
-
V
(BR)DSS
V
=0V, I =-250µA
GS
D
-1.5
-2
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I =-250µA
D
µA
Zero gate voltage drain current
I
DSS
V
=-60V, V =0V, T =25°C
-
-
-
-0.1
-10
-10
-1
-100
-100 nA
0.4
DS
GS
j
V
=-60V, V =0V, T =150°C
GS
DS
j
Gate-source leakage current
I
GSS
V
=-20V, V =0V
GS
DS
-
-
0.3
0.2
Drain-source on-state resistance
R
DS(on)
V
=-4.5V, I =-5.4A
GS
D
0.25
Drain-source on-state resistance
R
DS(on)
V
=-10V, I =-6.8A
GS
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I *R ,
DS(on)max
1.8
3.5
-
S
D
I =-5.4
D
Input capacitance
C
V
=0V, V =-25V,
DS
-
-
-
-
360
103
40
450 pF
130
50
iss
GS
f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
oss
C
rss
t
V
=-30V, V =-4.5V,
GS
11
17
ns
d(on)
DD
I =-5.4, R =6
D
G
Rise time
t
V
=-30V, V =-4.5V,
-
-
-
168
49
89
252
74
134
r
DD GS
I =-5.4A, R =6
Turn-off delay time
Fall time
t
D
G
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
V
=-48V, I =-9.7A
-
-
-
1.3
5.1
14
2
7.5
21
nC
gs
DD
D
Q
gd
V
=-48V, I =-9.7A,
Gate charge total
Q
DD
D
g
V
=0 to -10V
GS
V
=-48V, I =-9.7A
-
-4.1
-
V
A
Gate plateau voltage
V
DD
D
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
-9.7
I
C
S
Inverse diode direct current,
I
-38.8
SM
pulsed
V
=0V, I =-9.7A
-
-
-
-1.1
52
64
-1.4
76
96
V
ns
nC
Inverse diode forward voltage V
GS
F
SD
Reverse recovery time
t
V =-30V, I =l ,
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
F
rr
Page 3
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
2 Drain current
1 Power dissipation
= f (T )
P
I = f (T )
tot
C
D
C
parameter: V
10 V
GS
SPD09P06PL
SPD09P06PL
50
-11
A
W
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
-10 2
SPD09P06PL
SPD09P06PL
K/W
t
= 11.0µs
p
A
10 0
-10 1
100 µs
10 -1
10 -2
D = 0.50
0.20
1 ms
-10 0
0.10
10 ms
0.05
DC
single pulse
10 -3
0.02
0.01
-10 -1
10 -4
-10 -1
-10 0
-10 1
-10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Page 4
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
SPD09P06PL
SPD09P06PL
-24
A
0.8
Ptot = 42W
c
d
e
f
g
h
i
V
[V]
GS
a
k
j
-20
-18
-16
-14
-12
-10
-8
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-7.0
-8.0
b
c
d
e
f
i
0.6
0.5
0.4
0.3
0.2
0.1
0
h
g
h
i
g
e
j
f
k
-6
j
-4
k
d
b
V
[V] =
GS
c
d
e
f
g
h
i
j
k
-2
c
a
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0
0
0
-2
-4
-6
-8
-12
0
-2 -4 -6 -8 -10 -12 -14 -16
-20
V
A
I
V
D
DS
7 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
25
4
S
A
3
2.5
2
15
10
5
1.5
1
0.5
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
10
V
V
V
D
I
GS
Page 5
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
10 Gate threshold voltage
9 Drain-source on-state resistance
= f (T )
R
V
= f (T )
DS(on)
j
GS(th)
j
parameter : I = -6.8 A, V = -10 V
parameter: V = V , I = -250 µA
GS DS D
D
GS
SPD09P06PL
2.4
V
0.75
98 %
2
1.8
1.6
1.4
1.2
1
0.6
0.55
0.5
typ.
2 %
0.45
0.4
0.35
0.3
98%
0.8
0.6
0.4
0.2
0
0.25
0.2
typ
0.15
0.1
0.05
0
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
180
°C
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
10 3
-10 2
SPD09P06PL
A
C
iss
pF
-10 1
C
C
oss
rss
10 2
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
-10 -1
0
-5
-10
-15
-20
-30
DS
0
-0.4 -0.8 -1.2 -1.6
-2
-2.4
-3
V
V
V
V
SD
Page 6
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
14 Typ. gate charge
13 Typ. avalanche energy
= f (T )
E
V
= f (Q
)
AS
j
GS
Gate
par.: I = -9.7 A , V = -25 V, R = 25
parameter: I = -9.7 A pulsed
D
DD
GS
D
SPD09P06PL
80
-16
mJ
V
60
50
40
30
20
10
0
-12
-10
-8
-6
-4
-2
0
V
0,2
DS max
0,8 VDS max
25
45
65
85 105 125 145
185
0
4
8
12
16
20
28
Gate
°C
T
nC
Q
j
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD09P06PL
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
140
200
°C
T
j
Page 7
2001-07-02
SPD09P06PL
SPU09P06PL
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2001-07-02
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