SPN01N60S5 [INFINEON]
Cool MOS Power-Transistor; 酷MOS功率三极管
| 型号： | SPN01N60S5 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS Power-Transistor |
| 文件： | 总8页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN01N60S5
Preliminary data
Cool MOS Power-Transistor
New revolutionary high voltage technology
COOLMOS
Power Semiconductors
Ultra low gate charge
Product Summary
Extreme dv/dt rated
V
@ T
650
6
V
A
DS
jmax
Optimized capacitances
R
DS(on)
Improved noise immunity
I
0.3
D
SOT-223
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í
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D,2/4
Type
SPN01N60S5
Package
Ordering Code
Q67040-S4208
Marking
SOT-223
01N60S5
G,1
S,3
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
0.3
0.2
1.6
A
T = 70 °C
A
Pulsed drain current 1)
I
D puls
T = 25 °C
A
6
kV/µs
Reverse diode dv/dt
dv/dt
I = 0.3 A, V <V , di/dt = 100 A/µs,
DSS
S
DS
T
= 150 °C
jmax
V
Gate source voltage
Power dissipation
V
P
20
GS
tot
1.8
W
T = 25 °C
A
°C
Operating and storage temperature
T , T
-55... +150
j
stg
1
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Thermal Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
R
-
35
-
K/W
K/W
thJS
R
thJA
-
-
110
-
-
2
2)
@ 6 cm cooling area
72
Static Characteristics, at T = 25 °C, unless otherwise specified
j
600
-
-
V
Drain-source breakdown voltage
= 0 V, I = 0.25 mA
V
(BR)DSS
V
GS
D
2.3
3
3.7
Gate threshold voltage, V = V
V
GS
DS
GS(th)
I = 250 µA, T = 25 °C
D
j
µA
Zero gate voltage drain current, V =V
I
DSS
DS DSS
V
V
= 0 V, T = 25 °C
-
-
-
0.5
1
GS
GS
j
= 0 V, T = 150 °C
-
-
50
j
100 nA
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
GS
DS
-
5.5
6
Drain-source on-state resistance
R
DS(on)
V
= 10 V, I = 0.2 A
D
GS
1
current limited by T
jmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
V
2*I *R ,
DS(on)max
-
0.45
-
S
Transconductance
g
DS
D
fs
I =0.2A
D
V
=0V, V =25V,
DS
-
-
-
-
-
-
-
100
40
-
-
-
pF
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
GS
iss
f=1MHz
C
oss
2.5
45
C
rss
V
=350V, V =10V,
GS
ns
t
DD
d(on)
I =0.3A, R =100
30
-
t
D
G
r
60
90
45
Turn-off delay time
Fall time
t
d(off)
30
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
V
=350V, I =0.3A
-
-
-
0.9
2.2
3.9
-
-
nC
Q
Q
Q
DD
D
gs
gd
g
V
=350V, I =0.3A,
5
Total gate charge
DD
D
V
=0 to 10V
GS
Reverse Diode
T =25°C
-
-
-
-
0.3
1.6
A
V
Inverse diode continuous
forward current
I
C
S
Inverse diode direct
current,pulsed
I
SM
V
=0V, I =0.3A
-
-
-
0.85
200
1.05
Inverse diode forward voltage V
GS
F
SD
V =100V, I =l ,
340 ns
µC
Reverse recovery time
t
rr
R
F S
di /dt=100A/µs
0.45
-
Reverse recovery charge
Q
rr
F
3
2001-07-25
SPN01N60S5
Preliminary data
Power Dissipation
= f (T )
Drain current
I = f (T )
P
tot
A
D
A
parameter: V
10 V
GS
SPN01N60S5
SPN01N60S5
1.9
W
0.32
A
1.6
1.4
1.2
1
0.24
0.2
0.16
0.12
0.08
0.04
0
0.8
0.6
0.4
0.2
0
°C
°C
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
T
T
A
A
Safe operating area
I =f (V
Transient thermal impedance
Z = f (t )
thJA
)
D
DS
p
parameter: D=0.01, T =25°C
parameter : D = t /T
C
p
10 1
10 2
SPN01N60S5
SPN01N60S5
A
K/W
10 1
t
= 16.0µs
p
10 0
100 µs
10 -1
10 -2
10 -3
10 0
1 ms
D = 0.50
0.20
single pulse
10 ms
0.10
0.05
10 -1
0.02
0.01
DC
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2
10 0
10 1
10 2
10 3
DS
10 4
V
s
V
t
p
4
2001-07-25
SPN01N60S5
Preliminary data
Typ. output characteristic
I = f (V
Drain-source on-resistance
R = f (T )
DS(on)
)
D
DS
j
Parameter: V , T = 25 °C
parameter : I = 0.2 A, V = 10 V
GS
j
D
GS
2.5
15
20V
10V
98%
A
7V
12
11
10
9
typ.
6.5V
1.5
1
8
6V
7
6
5
5.5V
5V
4
0.5
0
3
2
1
0
0
5
10
15
25
-60
-20
20
60
100
180
V
°C
V
T
j
DS
Typ. transfer characteristics
I = f ( V
Typ. capacitances
C = f (V
)
)
DS
D
GS
V
2 x I x R
parameter: V =0 V, f=1 MHz
DS
D
DS(on)max
GS
10 3
2.5
pF
A
C
iss
10 2
10 1
10 0
1.5
1
C
oss
0.5
0
C
rss
0
4
8
12
20
0
10 20 30 40 50 60 70 80
100
V
V
GS
V
V
DS
5
2001-07-25
SPN01N60S5
Preliminary data
Drain-source breakdown voltage
= f (T )
Gate threshold voltage
V = f (T )
GS(th)
V
(BR)DSS
j
j
parameter: V = V , I = 250 µA
GS
DS
D
SPN01N60S5
5
720
V
V
4
680
660
640
620
600
580
560
540
3.5
3
98%
2.5
2
typ.
2%
1.5
1
0.5
0
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
180
°C
T
T
j
j
Forward characteristics of reverse diode
I = f (V
Typ. gate charge
= f (Q
)
V
)
Gate
F
SD
GS
parameter: T , tp = 10 µs
parameter: I = 0.3 A pulsed
D
j
10 1
SPN01N60S5
SPN01N60S5
16
V
A
12
10 0
V
0,2
DS max
0,8 VDS max
10
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
2
10 -2
0
V
0
0.4
0.8
1.2
1.6
2
2.4
3
0
1
2
3
4
5.5
nC
V
Q
SD
g
6
2001-07-25
SPN01N60S5
Preliminary data
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7
2001-07-25
SPN01N60S5
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
8
2001-07-25
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