SPN03N60C3_05 [INFINEON]
Cool MOS Power Transistor Feature; 酷MOS功率晶体管特征
| 型号： | SPN03N60C3_05 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS Power Transistor Feature |
| 文件： | 总12页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN03N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
@ T
650
1.4
0.7
V
Ω
A
DS
jmax
R
DS(on)
I
D
• Ultra low gate charge
SOT-223
• Extreme dv/dt rated
• Ultra low effective capacitances
4
3
2
1
VPS05163
Type
Package
Ordering Code
Marking
03N60C3
SPN03N60C3
SOT-223
Q67040S4552
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
T = 70 °C
A
0.7
0.4
A
3
Pulsed drain current, t limited by T
I
D puls
p
jmax
T = 25 °C
A
3.2
Avalanche current, repetitive t limited by T
I
AR
jmax AR
Gate source voltage static
V
V
±20
30
1.8
GS
V
P
Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
GS
tot
W
°C
Operating and storage temperature
T , T
-55... +150
j
stg
Rev. 2.1
Page 1
2005-02-21
SPN03N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 3.2 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
-
25
-
K/W
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
R
thJS
R
thJA
-
-
110
-
-
70
2
1)
@ 6 cm cooling area
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 600
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =3.2A
-
700
V
GS
D
(BR)DS
I =135µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
µA
DS
GS
DSS
T =25°C,
-
-
0.5
-
1
70
j
T =150°C
j
V
V
=30V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
DS
=10V, I =2A,
Ω
GS
D
DS(on)
T =25°C
-
-
-
1.26
3.8
10
1.4
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Rev. 2.1
Page 2
2005-02-21
SPN03N60C3
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
3.4
-
fs
DS
D
I =0.4A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
400
150
5
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
2)
V
V
=0V,
Effective output capacitance,
energy related
C
12
pF
ns
GS
o(er)
=0V to 480V
DS
3)
Effective output capacitance,
time related
C
-
26
-
o(tr)
Turn-on delay time
t
V
=350V, V =0/10V,
-
-
-
-
7
3
64
12
-
-
d(on)
DD
GS
I =0.7A, R =20Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
100
20
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=420V, I =0.7A
-
-
-
2
6
13
-
-
17
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=420V, I =0.7A,
Gate charge total
DD
D
=0 to 10V
GS
V
=420V, I =0.7A
-
5.5
-
Gate plateau voltage
V(plateau)
DD
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
3
Co(tr) is a fixed capacitance that gives the same charging time asCoss while VDS is rising from 0 to 80% VDSS
.
Rev. 2.1
Page 3
2005-02-21
SPN03N60C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
A
-
-
0.7
A
Inverse diode continuous
forward current
I
S
Inverse diode direct current,
I
-
-
3
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
250
1.8
15
-
1.2
400 ns
-
-
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =420V, I =I ,
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
µC
A
F
rr
I
rrm
540 A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Rev. 2.1
Page 4
2005-02-21
SPN03N60C3
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
A
D
parameter : D = 0 , T =25°C
A
10 1
SPN03N60C3
1.9
W
A
1.6
1.4
1.2
1
10 0
10 -1
0.8
0.6
0.4
0.2
0
tp = 0.001 ms
tp = 0.01 ms
10 -2
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 -3
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
A
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 2
11
A
K/W
20V
10 1
10 0
9
7V
6.5V
8
6V
5.5V
7
5V
4.5V
6
4V
D = 0.5
D = 0.2
5
4
3
2
1
0
10 -1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
0
4
8
12
16
24
DS
s
V
t
V
p
Rev. 2.1
Page 5
2005-02-21
SPN03N60C3
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
10
6
Ω
4V
20V
A
4.5V
5V
7V
6V
8
7
6
5
4
3
2
1
5.5V
6V
5.5V
5V
6.5V
8V
4
3
2
1
0
4.5V
4V
20V
3.5V
0
4
8
12
16
24
DS
0
1
2
3
4
5
6
8
V
A
I
V
D
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
DS(on)max
R
DS(on)
j
D
GS
DS
D
parameter : I = 0.4 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPN03N60C3
8
11
A
Ω
25°C
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
150°C
98%
typ
°C
-60
-20
20
60
100
180
0
2
4
6
8
10 12 14 16
20
V
V
T
GS
j
Rev. 2.1
Page 6
2005-02-21
SPN03N60C3
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
V
)
I = f (V
)
GS
Gate
F
SD
parameter: I = 0.7 A pulsed
parameter: T , tp = 10 µs
D
10 1
SPN03N60C3
SPN03N60C3
16
V
A
12
10 0
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
nC
0
2
4
6
8
10 12 14 16
20
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
12 Typ. switching time
t = f (R ), inductive load, T =125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =0.7A
par.: V =380V, V =0/+13V, I =0.7 A
DS
GS
D
DS
GS
D
1500
500
A/µs
ns
1200
1050
900
750
600
450
300
150
0
400
350
300
250
200
150
100
50
td(off)
tf
td(on)
tr
di/dt(on)
120
di/dt(off)
80
0
0
40
160
220
0
20 40 60 80 100 120 140 160
200
Ω
Ω
R
R
G
G
Rev. 2.1
Page 7
2005-02-21
SPN03N60C3
13 Typ. switching time
t = f (I ), inductive load, T =125°C
14 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =20Ω
par.: V =380V, V =0/+13V, I =0.7A
D
DS
GS
G
DS
GS
100
90
ns
V/ns
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
dv/dt(on)
td(off)
tf
td(on)
tr
dv/dt(off)
0
0.5
1
1.5
2
2.5
3.5
0
20 40 60 80 100 120 140 160
200
A
Ω
I
R
D
G
15 Typ. switching losses
E = f (I ), inductive load, T =125°C
16 Typ. switching losses
E = f(R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =20Ω
par.: V =380V, V =0/+13V, I =0.7A
DS
GS
G
DS
GS
D
0.01
0.06
*) E includes SDP06S60
on
diode commutation losses.
*) E includes SDP06S60
on
diode commutation losses.
mWs
mWs
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0.048
0.042
0.036
0.03
Eoff
Eon*
Eon*
Eoff
0.024
0.018
0.012
0.006
0
0
0.5
1
1.5
2
2.5
3.5
0
40
80
120
160
220
A
Ω
R
I
D
G
Rev. 2.1
Page 8
2005-02-21
SPN03N60C3
17 Drain-source breakdown voltage
= f (T )
18 Typ. capacitances
C = f (V
V
)
DS
(BR)DSS
j
parameter: V =0V, f=1 MHz
GS
10 4
SPN03N60C3
720
V
pF
10 3
680
660
640
620
600
580
560
540
Ciss
10 2
Coss
10 1
Crss
10 0
-60
-20
20
60
100
180
0
100
200
300
400
600
DS
°C
V
V
T
j
19 Typ. C
stored energy
oss
E
=f(V
)
oss
DS
2.5
µJ
1.5
1
0.5
0
0
100
200
300
400
600
DS
V
V
Rev. 2.1
Page 9
2005-02-21
SPN03N60C3
Definition of diodes switching characteristics
Rev. 2.1
Page 10
2005-02-21
SPN03N60C3
SOT-223
Rev. 2.1
Page 11
2005-02-21
SPN03N60C3
Published by
Infineon Technologies AG,
81726 Munich, Germany
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.1
Page 12
2005-02-21
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