SPP15P10PL H [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;型号: | SPP15P10PL H |
厂家: | Infineon |
描述: | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
文件: | 总10页 (文件大小:761K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPP15P10PL H
SIPMOS® Power-Transistor
Product Summary
Features
V DS
-100
0.20
-15
V
:
A
• P-Channel
R DS(on),max
I D
• Enhancement mode
• logic level
• Avalanche rated
PG-TO220-3
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
Package
Marking
Lead free Packing
Yes Non dry
SPP15P10PL H PG-TO220-3
15P10PL
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
-15
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
A
11.3
I D,pulse
E AS
-60
Pulsed drain current
230
I D=-15 A, R GS=25 :
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
20
P tot
T C=25 °C
128
Power dissipation
W
°C
T j, T stg
-55 ... 175
1C (1kV to 2kV)
260 °C
55/175/56
Operating and storage temperature
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev 1.4
page 1
2011-09-01
SPP15P10PL H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
R thJC
-
-
-
-
-
-
1.17 K/W
junction - soldering point
Thermal resistance,
junction - ambient
minimal footprint,
R thJA
75
45
steady state
6 cm2 cooling area1),
steady state
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=-250 mA
DS=V GS, I D=-
Drain-source breakdown voltage
Gate threshold voltage
-100
-1
-
-
V
-1.5
-2
1.54 mA
V
DS=-100 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-0.1
-1
μA
T j=25 °C
V
DS=-100 V, V GS=0 V,
-
-
-
-10
-10
190
-100
T j=150 °C
I GSS
V
V
GS=-20 V, V DS=0 V
GS=-4.5 V, I D=-9.7 A
Gate-source leakage current
-100 nA
R DS(on)
Drain-source on-state resistance
270
200
-
m:
m:
S
V
GS=-10 V,
-
140
I D=-11.3 A
|V DS|>2|I D|R DS(on)max
I D=-11.3 A
,
g fs
Transconductance
5.5
11.0
2
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.4
page 2
2011-09-01
SPP15P10PL H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1120
272
120
7.6
21
1490 pF
362
V
GS=0 V, V DS=-25 V,
C oss
C rss
t d(on)
t r
f =1 MHz
180
11
31
75
44
ns
V
DD=-50 V, V GS=-
10 V, I D=-15 A,
R G=6 :
t d(off)
t f
Turn-off delay time
Fall time
50
29
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
4.3
17
5.7
26
62
-
nC
Q gd
V
V
DD=-80 V, I D=-15 A,
GS=0 to -10 V
Q g
47
V plateau
Gate plateau voltage
4.0
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
-15
-60
T C=25 °C
I S,pulse
V
GS=0 V, I F=-15 A,
V SD
t rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-0.96
110
-1.35
V
T j=25 °C
165 ns
675 nC
V R=50 V, I F=|I S|,
di F/dt =100 A/μs
Q rr
450
2) See figure 16 for gate charge parameter definition
Rev 1.4
page 3
2011-09-01
SPP15P10PL H
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); |V GS|10 V
16
12
8
140
120
100
80
60
40
4
20
0
0
0
0
40
80
T A [°C]
120
160
40
80
A [°C]
120
160
T
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
102
101
limited by on-state
resistance
10 μs
100 μs
1 ms
101
100
0.5
10 ms
DC
0.2
0.1
0.05
100
10-1
0.02
0.01
single pulse
10-1
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
-V DS [V]
t p [s]
Rev 1.4
page 4
2011-09-01
SPP15P10PL H
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
40
500
-10 V
-8 V
-4.5 V
-6 V
-3.5 V
-3 V
35
30
25
20
15
10
5
-2.5 V
400
300
200
100
-4.5 V
-3.5 V
-3 V
-6 V
-8 V
-10 V
-2.5 V
-
0
0
2
4
6
8
10
0
10
20
30
-V DS [V]
-I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
25
20
15
10
5
20
15
10
5
25 °C
125 °C
0
0
1
2
3
4
5
0
5
10
15
20
25
30
-V GS [V]
-I D [A]
Rev 1.4
page 5
2011-09-01
SPP15P10PL H
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-11.3 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-1.54 mA
400
3
300
max.
98 %
2
typ.
200
1
min.
typ.
100
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I F=f(V SD
)
parameter: T j
102
25 °C, typ
175 °C, 98%
101
100
175 °C, typ
Ciss
103
102
101
25 °C, 98%
Coss
Crss
10-1
10-2
0
0
20
40
60
80
0.5
1
1.5
-V DS [V]
-V SD [V]
Rev 1.4
page 6
2011-09-01
SPP15P10PL H
13 Avalanche characteristics
AS=f(t AV); R GS=25 :
14 Typ. gate charge
GS=f(Q gate); I D=-15 A pulsed
V
I
parameter: T j(start)
parameter: V DD
10
50 V
80 V
8
6
4
2
20 V
25 °C
101
100 °C
125 °C
100
10-1
100
0
0
101
102
103
10
20
30
40
50
t
AV [μs]
- Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-1mA
120
115
110
105
100
95
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev 1.4
page 7
2011-09-01
SPP15P10PL H
Package Outline: PG-TO-252-3
Rev 1.4
page 8
2011-09-01
SPP15P10PL H
PG-TO220-3: Outline
Rev 1.4
page 9
2011-09-01
SPP15P10PL H
Rev. 1.4
page 10
2011-09-01
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