SPP17N80C2 [INFINEON]
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN;
| 型号： | SPP17N80C2 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN 局域网 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP17N80C2
SPB17N80C2
Preliminary data
Cool MOS™ Power Transistor
COOLMOS
Power Semiconductors
Feature
Product Summary
New revolutionary high voltage technology
V
800
290
17
V
DS
Worldwide best R
in TO 220
DS(on)
R
m
A
DS(on)
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
I
D
P-TO263-3-2
P-TO220-3-1
Ultra low effective capacitances
Improved noise immunity
Type
Package
Ordering Code
Marking
SPP17N80C2
SPB17N80C2
P-TO220-3-1 Q67040-S4353
P-TO263-3-2 Q67040-S4354
SPP17N80C2
SPB17N80C2
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T = 25 °C
17
11
C
T = 100 °C
C
Pulsed drain current, t limited by T
51
I
p
jmax
D puls
Avalanche energy, single pulse
670
mJ
E
AS
I =4A, V =50V
D
DD
1)
jmax
E
0.5
Avalanche energy, repetitive t limited by T
AR
AR
I =17A, V =50V
D
DD
17
6
A
Avalanche current, repetitive t limited by T
I
AR
AR
jmax
Reverse diode dv/dt
dv/dt
V/ns
I =17A, V
V
, di/dt=100A/µs, T
=150°C
jmax
S
DS
DD
Gate source voltage
Power dissipation
V
P
±20
V
GS
tot
208
W
T = 25 °C
C
Operating and storage temperature
-55... +150
°C
T , T
j
stg
2000-05-29
Page 1
SPP17N80C2
SPB17N80C2
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
-
-
-
-
0.6 K/W
62
thJC
R
thJA
R
thJA
-
-
-
62
-
2
2)
@ 6 cm cooling area
35
Linear derating factor
-
-
-
-
1.67 W/K
Soldering temperature,
260 °C
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Static Characteristics
Drain-source breakdown voltage
V
V
V
800
-
-
-
V
(BR)DSS
V
=0V, I =0.25mA
GS
D
Drain-source avalanche breakdown voltage
-
870
3
(BR)DS
GS(th)
DSS
V
=0V, I =17A
GS D
Gate threshold voltage, V = V
2
4
GS
DS
I =1mA
D
Zero gate voltage drain current
µA
I
I
V
V
= 800 V, V
= 0 V, T = 25 °C
-
-
0.5
-
25
DS
DS
GS
GS
j
= 800 V, V
= 0 V, T = 150 °C
250
j
Gate-source leakage current
-
-
-
-
100 nA
GSS
V
=20V, V =0V
DS
GS
Drain-source on-state resistance
250
0.7
290
-
R
R
m
DS(on)
V
=10V, I =11A, T =25°C
D j
GS
Gate input resistance
f = 1 MHz, open drain
G
1
Repetitve avalanche causes additional power losses that can be calculated asP =E *f.
AR
AV
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2000-05-29
Page 2
SPP17N80C2
SPB17N80C2
Preliminary data
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
V
2*I *R ,
DS(on)max
-
15
-
S
fs
DS
D
I =11A
D
Input capacitance
Output capacitance
C
C
V
=0V, V =25V,
-
-
-
-
2320
1250
60
-
-
-
-
pF
iss
GS
DS
f=1MHz
oss
rss
Reverse transfer capacitance C
1)
Effective output capacitance,
energy related
V
V
=0V,
59
pF
C
C
t
GS
o(er)
=0V to 640 V
DS
2)
Effective output capacitance,
time related
-
124
-
o(tr)
Turn-on delay time
Rise time
V
=400V, V =0/10V,
-
-
-
-
45
17
77
10
-
ns
DD
GS
d(on)
I =17A, R =5.6 ,
D
t
t
t
-
G
r
T =125°C
Turn-off delay time
Fall time
88
13
j
d(off)
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=640V, I =17A
D
-
-
-
9
-
-
nC
V
gs
gd
g
DD
42
83
Gate charge total
V
V
=640V, I =17A,
D
107
DD
=0 to 10V
GS
Gate plateau voltage
V
=640V, I =17A
D
-
6
-
V(plateau)
DD
1
C
is a fixed capacitance that gives the same stored energy asC
while V is rising from 0 to 80% V
.
DSS
oss
DS
o(er)
o(tr)
2
C
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
DSS
oss
DS
2000-05-29
Page 3
SPP17N80C2
SPB17N80C2
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
17
51
A
I
C
S
Inverse diode direct current,
pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
=0V, I =I
F S
-
-
-
-
-
1
550
13
1.2
V
V
GS
SD
t
V =400V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Q
F
rr
Peak reverse recovery current I
40
rrm
Peak rate of fall of reverse
recovery current
1200
A/µs
di /dt
rr
Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Transient thermal impedance
Thermal resistance
Thermal capacitance
0.00716
0.01
K/W
0.000441
0.0014
0.000985
0.0045
0.02
Ws/K
R
R
R
R
C
th1
th1
th2
th3
th4
C
th2
0.022
0.065
0.083
0.038
C
th3
C
th4
Rth5
C
th5
0.146
R
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
2000-05-29
Page 4
SPP17N80C2
SPB17N80C2
Preliminary data
1 Power dissipation
2 Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V
10 V
GS
SPP17N80C2
SPP17N80C2
240
18
A
W
200
180
160
140
120
100
80
14
12
10
8
P
I
6
60
4
40
2
20
0
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T =25°C
parameter : D = t /T
C
p
SPP17N80C2
SPP17N80C2
10 2
10 1
t
= 6.7µs
10 µs
K/W
p
A
10 0
I
V
10 1
10 -1
I
Z
R
100 µs
10 -2
D = 0.50
0.20
10 0
10 -3
0.10
1 ms
0.05
10 ms
0.02
single pulse
10 -4
0.01
DC
10 -1
10 -5
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
DS
2000-05-29
Page 5
SPP17N80C2
SPB17N80C2
Preliminary data
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
35
70
20V
10V
8V
A
20V
10V
A
60
55
50
7V
25
6.5V
6V
45
8V
I
I
20
40
35
30
25
20
15
10
5
7V
6V
5.5V
5V
15
10
5
4.5V
4V
5V
0
0
0
5
10
15
20
30
0
5
10
15
20
30
V
V
DS
DS
V
V
7 Typ. drain-source on resistance
=f(I )
8 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 11 A, V = 10 V
D GS
j
GS
SPP17N80C2
1.5
1.6
A
1.3
1.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
4.5V
5V
4V
5.5V
6V
1.1
1.0
0.9
0.8
0.7
0.6
0.5
R
6.5V
7V
8V
10V
20V
98%
typ
°C
0
5
10
15
20
25
35
-60
-20
20
60
100
180
V
DS
T
V
j
2000-05-29
Page 6
SPP17N80C2
SPB17N80C2
Preliminary data
9 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
10 Gate threshold voltage
= f (T )
V
D
GS
DS
D
DS(on)max
GS(th)
j
parameter: t = 10 µs
parameter: V = V , I = 1 mA
GS DS D
p
5.0
65
A
V
25°C
55
50
45
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
I
40
V
35
30
25
20
15
10
5
typ.
150°C
min.
0
0
2
4
6
8
10 12 14 16
20
-60
-20
20
60
100
160
V
V
°C
T
GS
j
11 Typ. gate charge
= f (Q
12 Forward characteristics of body diode
I = f (V )
V
)
GS
Gate
F
SD
parameter: I = 17 A pulsed
parameter: T , tp = 10 µs
D
j
SPP17N80C2
SPP17N80C2
10 2
16
V
A
12
10 1
V
0,2
DS max
0,8 VDS max
10
8
V
I
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
2
10 -1
0.0
0
0
20
40
60
80
100
140
0.4
0.8
1.2
1.6
2.0
2.4
3.0
SD
V
nC
Q
V
Gate
2000-05-29
Page 7
SPP17N80C2
SPB17N80C2
Preliminary data
13 Avalanche SOA
= f (t )
14 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T 150 °C
par.: I = 4 A, V = 50 V
j
D
DD
18
700
mJ
A
600
550
500
450
400
350
300
250
200
150
100
50
14
12
I
E
10
8
6
Tj(START)=25°C
4
2
T(START)=125°C
j
0
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
25
50
75
100
150
µs
°C
t
T
AR
j
15 Drain-source breakdown voltage
= f (T )
16 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.5mJ
AR
SPP17N80C2
980
500
V
W
940
920
900
880
860
840
820
800
780
760
740
720
400
350
P
V
300
250
200
150
100
50
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
MHz
T
f
2000-05-29
j
Page 8
SPP17N80C2
SPB17N80C2
Preliminary data
18 Typ. C
17 Typ. capacitances
C = f (V )
stored energy
oss
E
=f(V )
DS
DS
oss
parameter: V =0V, f=1 MHz
GS
10 5
18
pF
µJ
10 4
14
12
10
8
Ciss
10 3
E
C
10 2
Coss
6
10 1
4
Crss
2
10 0
0
0
100 200 300 400 500 600
800
DS
0
100 200 300 400 500 600
800
DS
V
V
V
V
Definition of diodes switching characteristics
2000-05-29
Page 9
SPP17N80C2
SPB17N80C2
Preliminary data
P-TO220-3-1
dimensions
symbol
[mm]
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
1.17
2.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
TO-263 (D²Pak/P-TO220SMD)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
2000-05-29
Page 10
SPP17N80C2
SPB17N80C2
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2000-05-29
Page 11
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