TLE4945L [INFINEON]
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications; 单向和双极霍尔IC开关用于磁场的应用型号: | TLE4945L |
厂家: | Infineon |
描述: | Uni- and Bipolar Hall IC Switches for Magnetic Field Applications |
文件: | 总15页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Uni- and Bipolar Hall IC Switches for
Magnetic Field Applications
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L;
TLE 4945-2L
Bipolar IC
Features
• Temperature compensated magnetic performance
• Digital output signal
• For unipolar and alternating magnetic fields
• Large temperature range
• Protection against reversed polarity
• Output protection against electrical disturbances
P-SSO-3-2
Type
Ordering Code
Q67006-A9120
Q67006-A9112
Q67006-A9143
Q67006-A9163
on request
Package
TLE 4905 L
TLE 4935 L
TLE 4935-2 L
TLE 4945 L
TLE 4945-2L
P-SSO-3-2
P-SSO-3-2
P-SSO-3-2
P-SSO-3-2
P-SSO-3-2
TLE 4905/35/35-2/45 L (Unipolar/Bipolar Magnetic Field Switches) have been designed
specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.
Semiconductor Group
1
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Pin Configuration
(view on branded side of component)
Center of
sensitive area
2.08±0.15
1
2
3
GND
Q
VS
AEP01364
Figure 1
Pin Definitions and Functions
Pin No.
Symbol
VS
Function
1
2
3
Supply voltage
Ground
GND
Q
Output
Semiconductor Group
2
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated. The output is protected against electrical
disturbances.
Threshold
Generator
1
3
VS
Q
Hall-
Generator
V
S
VRef
Schmitt-
Trigger
Amplifier
Output
Stage
2
AEB01243
GND
Figure 2
Block Diagram
Semiconductor Group
3
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Functional Description Unipolar Type TLE 4905 (figure 3 and 4)
When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the current is reduced, the output of the IC turns off (Release
Point; figure 4).
+
Branded Side
Ι
S
VQ
N
+
-
AES01231
VS
Figure 3
Sensor/Magnetic-Field Configuration
B
BOP
Induction
BRP
0
t
VQ
VQH
Output Voltage
VQL
t
AED01420
Figure 4
Switching Characteristics Unipolar Type
Semiconductor Group
4
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Functional Description Bipolar Type TLE 4935/35-2/45 (figure 5 and 6)
When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When a reverse magnetic field is generated, the output of the IC turns
off (Release Point; figure 6).
+
Branded Side
Ι
S
VQ
N
+
-
AES01231
VS
Figure 5
Sensor/Magnetic-Field Configuration
B
BOP
Induction
0
t
BRP
VQ
VQH
Output Voltage
VQL
t
AED01421
Figure 6
Switching Characteristics Bipolar Type
Semiconductor Group
5
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Absolute Maximum Ratings
Tj = – 40 to 150 ˚C
Parameter
Symbol
Limit Values Unit Remarks
min. max.
Supply voltage
VS
VS
VQ
IQ
– 40 32
V
–
Supply voltage
–
–
–
–
40
V
t < 400 ms; ν = 0.1
Output voltage
32
V
–
Output current
100
100
mA
mA
˚C
˚C
˚C
˚C
–
Output reverse current
Junction temperature
Junction temperature
Junction temperature
Storage temperature
Thermal resistance
– IQ
Tj
–
– 40 150
–
Tj
–
–
170
210
1000 h
40 h
–
Tj
Tstg
Rth JA
– 50 150
190
–
K/W –
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Operating Range
Parameter
Symbol
Limit Values Unit Remarks
min. max.
Supply voltage
VS
Tj
3.8
24
V
–
–
Junction temperature
Junction temperature
– 40 150
– 40 170
˚C
˚C
Tj
thresholds may
exceed the limits
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group
6
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
AC/DC Characteristics
3.8 V ≤ VS ≤ 24 V; – 40 ˚C ≤ Tj ≤ 150 ˚C
Parameter
Symbol
Limit Values
min. typ. max.
Unit Test Condition Test
Circuit
Supply current
ISHigh
ISLow
–
–
3
4
7
8
mA B < BRP
mA B > BOP
1
1
Output saturation VQSat
voltage
–
–
–
0.25 0.5
V
IQ = 40 mA
1
Output leakage
current
IQL
–
–
10
1
µA
µs
VQ = 24 V
1
1
Rise/fall time
tr / tf
RL = 1.2 kΩ
CL ≤ 33 pF
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25°C and
the given supply voltage.
Semiconductor Group
7
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Magnetic Characteristics
3.8 V ≤ VS ≤ 24 V
Parameter Symbol
Limit Values
Unit
TLE 4905
unipolar
TLE 4935 TLE 4935-2 TLE 4945 TLE 4945-2
bipolar
latch
bipolar
latch
bipolar
latch
bipolar
latch
min. max. min. max. min. max. min. max. min. max.
Junction Temperature Tj = – 40 ˚C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7.5
5.5
2
19
17
6.5
10
20
15
27
– 6
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 20 – 10 – 27 – 15 – 10 6
∆BHY
20
10
40
30
54
2
10
Junction Temperature Tj = 25 ˚C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7
5
2
18
16
6
18
14
26
– 6
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
–18 –10 – 26 – 14 – 10 6
∆BHY
20
36
28
52
2
10
Junction Temperature Tj = 85 ˚C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6.5
4.5
2
17.5
15
9
18
13
26
– 6
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
– 18 – 9
18 36
– 26 – 13 – 10 6
26 52 10
∆BHY
5.5
2
Semiconductor Group
8
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Magnetic Characteristics (cont’d)
3.8 V ≤ VS ≤ 24 V
Parameter Symbol
Limit Values
Unit
TLE 4905
unipolar
TLE 4935 TLE 4935-2 TLE 4945 TLE 4945-2
bipolar
latch
bipolar
latch
bipolar
latch
bipolar
latch
min. max. min. max. min. max. min. max. min. max.
Junction Temperature Tj = 150 ˚C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6
4
2
17
14
5
7
18
– 18 – 7
14 36
12
– 25 – 12 – 10 6
24 50 10
25
– 6
10
– 3
– 6
1
6
3
5
mT
mT
mT
BRP
∆BHY
2
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25°C and
the given supply voltage.
Semiconductor Group
9
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
ΙS
1
V
VS
S
+
-
4.7 nF
CL
TLE
2
3
RL
GND
Q
4905/35/35-2/45-2
ΙQ
AES01244
Unipolar Type TLE 4905
Bipolar Type TLE 4935
VQ
VQ
VQH
VQH
VQL
VQL
0
BRP
BOP
B
BRP
0
BOP
B
BHY
BHY
AED01422
VQ
VQH
0.9VQH
0.1VQH
t
AED01246
t r
t f
Figure 7
Test Circuit 1
Semiconductor Group
10
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Mainframe
VS
Line
Sensor
1
VS
4.7 nF
2
TLE
1.2 kΩ
GND
Q
4905/35/35-2/45-2
4.7 nF
3
Signal
AES01247
Figure 8
Application Circuit
Semiconductor Group
11
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Quiescent Current versus
Supply Voltage
Quiescent Current versus
Junction Temperature
AED01249
AED01248
8
8
Ι S
Ι S
mA
6
=
mA
VQ
High
V
Q = High
6
4
2
0
=
=
4
2
0
-40 ˚C
150 ˚C
Tj
Tj
VS = 24 V
VS = 3.8 V
0
5
10
15
V
25
-50
0
50
100
C
200
VS
T
Quiescent Current Difference
versus Temperature
Saturation Voltage versus
Output Current
AED01459
AED01461
1.0
mA
1.2
∆Ι S
VQ
V
_
_
24 V
<
<
3.8 V
VS
1.0
0.8
0.6
0.4
0.2
0
∆Ι S = ΙSLow - ΙSHigh
Ι Q = 40 mA
0.75
0.5
0.25
0
Tj = 150 ˚C
Tj = -40 ˚C
-40
0
50
100
150
200
0
20
40
60
100
˚C
Tj
mA
Ι Q
Semiconductor Group
12
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
TLE 4905 Operate-and Release-Point
versus Junction Temperature
TLE 4905 Hysteresis versus Junction
Temperature
AED01424
AED01426
25
8
B
_
<
_
<
_
<
3.8 V
_
<
3.8 V
24 V
VS
VS 24 V
mT
20
B
mT
6
BOPmax
BHYmax
15
10
5
BRPmax
BOPtyp
BRPtyp
4
2
0
BHYtyp
BOPmin
BRPmin
BHYmin
0
-40
0
50
100
˚C
200
-40
0
50
100
˚C
200
Tj
Tj
TLE 4935-2 Operate-and Release-Point
versus Junction Temperature
TLE 4935 Operate-and Release-Point
versus Junction Temperature
AED01423
AED01640
30
30
_
<
_
24 V
<
3.8 V
VS
B
_
<
_
24 V
<
3.8 V
VS
mT
20
BOPmax
mT
20
B
BOPtyp
BOPmin
BOPmax
10
0
BOPtyp
BOPmin
10
0
-10
-20
-30
BRPmax
BRPtyp
BRPmax
BRPtyp
BRPmin
-10
BRPmin
-20
-40
0
50
100
˚C
200
-40
0
50
100
˚C
200
Tj
Tj
Semiconductor Group
13
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
TLE 4945 Operate-and Release-Point
versus Junction Temperature
TLE 4945-2 Operate-and Release-Point
versus Junction Temperature
AED01425
AED02353
30
18
_
_
24 V
_
<
_
<
24 V
< <
VS
3.8 V
3.8 V
VS
mT
12
mT
20
B
B
BOPmax
BOPmax
6
0
10
0
BRPmax
BOPtyp
BRPtyp
BOPmin
BRPmax
BOPtyp
BRPtyp
BOPmin
-6
-10
-20
-30
BRPmin
BRPmin
-12
-18
-40
0
50
100
˚C
200
-40
0
50
100
˚C
200
Tj
Tj
Semiconductor Group
14
1997-09-01
TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L
Package Outline
P-SSO-3-2
(Plastic Single Small Outline Package)
Exterior Packaging
I.e. tubes, trays, boxes are shown in our Data Book “Package Information”.
Dimensions in mm
1997-09-01
Semiconductor Group 15
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TLE49462LHALA1
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