TLE6285GDUMA1 [INFINEON]

Line Transceiver, 1 Func, 1 Driver, 1 Rcvr, BCDMOS, PDSO16, PLASTIC, SOP-16;
TLE6285GDUMA1
型号: TLE6285GDUMA1
厂家: Infineon    Infineon
描述:

Line Transceiver, 1 Func, 1 Driver, 1 Rcvr, BCDMOS, PDSO16, PLASTIC, SOP-16

驱动 CD 光电二极管 接口集成电路 驱动器
文件: 总25页 (文件大小:446K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet, Rev. 2.0, April 2005  
TLE 6285  
LIN-Transceiver with Voltage Regulator  
Automotive Power  
N e v e r s t o p t h i n k i n g .  
Edition 2005-04-18  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
81669 München, Germany  
© Infineon Technologies AG 2005.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as a guarantee of  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding  
circuits, descriptions and charts stated herein.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
LIN-Transceiver with Voltage Regulator  
TLE 6285  
Features  
• Single-wire transceiver, suitable for LIN protocol  
• Transmission rate up to 20 kBaud  
• Compatible to LIN specification 1.3, 2.0  
• Compatible to ISO 9141 functions  
• Low current consumption in sleep mode  
• Control output for voltage regulator  
• LIN bus, short circuit proof to ground and battery  
• Integrated 5V ±2%, low drop voltage regulator  
• 150 mA output current capability  
P-DSO-16-9, -11  
• Adjustable reset threshold  
• Overtemperature protection  
• Wide temperature range  
• Suitable for use in automotive electronics  
Description  
The TLE 6285 is a single-wire transceiver with a LDO. It is a chip by chip integrated  
circuit in a P-DSO-16-11 package. It works as an interface between the protocol  
controller and the physical bus. The TLE 6285 is especially suitable to drive the bus line  
in LIN systems in automotive and industrial applications. Further it can be used in  
standard ISO9141 systems.  
In order to reduce the current consumption the TLE 6285 offers a sleep operation mode.  
In this mode a voltage regulator can be controlled in order to minimize the current  
consumption of the whole application. The on-chip voltage regulator (VR) is designed for  
this application but it is also possible to use an external voltage regulator. A wake-up  
caused by a message on the bus enables the voltage regulator and sets the RxD output  
low until the device is switched to normal operation mode. To achieve proper operation  
of the µC, the device supplies a reset signal. The reset delay time is selected application  
specific by an external capacitor. The reset threshold is adjustable.  
The TLE 6285 is designed to withstand the severe conditions of automotive applications.  
Type  
Ordering Code  
Package  
TLE 6285 G  
Q67065-A7059  
P-DSO-16-11  
Data Sheet  
3
Rev. 2.0, 2005-04-18  
TLE 6285  
T L E 6 2 8 5 G  
(P -D S O -1 6 -1 1 )  
G N D  
R D  
G N D  
IN H I  
R O  
1
2
3
4
5
6
7
8
1 6  
1 5  
1 4  
1 3  
1 2  
1 1  
1 0  
9
L e a d fra m e  
C h ip :  
V o lta g e  
R T h  
R e g u la to r  
V C C O  
IN H O  
R x D  
V B A T  
B u s  
C h ip :  
T x D  
T ra n s c e iv e r  
E N L IN  
G N D  
V C C I  
G N D  
A E P 0 3 4 5 0 .V S D  
Figure 1  
Pin Configuration (top view)  
Data Sheet  
4
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 1  
Pin Definitions and Functions  
Pin No. Symbol Function  
1, 8, 9,  
16  
GND  
INHI  
RO  
Ground; place to cooling tabs to improve thermal behavior  
2
Inhibit Voltage Regulator Input; TTL compatible, HIGH active  
(HIGH switches the VR on); connect to VBAT if not needed  
3
Reset Output; open collector output connected to the output via  
a resistor of 20 kΩ  
4
5
6
7
VCCO  
INHO  
RxD  
5-V Output; connected to GND with 22 µF capacitor, ESR < 5Ω  
Inhibit LIN Output; to control a voltage regulator  
Receive Data Output; Integrated pull-up, LOW in dominate state  
ENLIN  
Enable LIN Input; integrated 30 kpull-down, transceiver in  
normal operation mode when HIGH  
10  
11  
12  
VCCI  
TxD  
BUS  
5-V Supply Input; VCC input to supply the LIN transceiver  
Transmit Data Input; internal pull-up, LOW in dominant state  
LIN BUS Output/Input; internal 30 kpull-up to VS, LOW in  
dominant state  
13  
14  
15  
VBAT  
RTh  
RD  
Battery Supply Input; a reverse current protection diode is  
required, block GND with 100 nF ceramic capacitor and 22 µF  
capacitor  
Reset Threshold; internal defined typical 4.6 V, adjustable down  
to 3.5 V according to the voltage level on this pin; connect to GND  
if not needed  
Reset Delay; connected to ground via external delay capacitor  
Data Sheet  
5
Rev. 2.0, 2005-04-18  
TLE 6285  
Functional Block Diagram  
13  
5
VBat  
INHO  
10  
VCCI  
7
Mode Control  
ENLIN  
30 k  
Output  
Stage  
Driver  
30 k Ω  
12  
Bus  
Temp.-  
Protection  
11  
TxD  
Receiver  
6
RxD  
GND  
TLE 4299  
4
13  
VBat  
VCCO  
RSO  
Band-Gap  
Reference  
Current & Saturation  
Control  
RRO  
2
Inhibit  
INHI  
Control  
3
RO  
Reference  
Reset  
14  
Control  
RTh  
15  
RD  
GND  
AEB03449.VSD  
Figure 2  
Block Diagram  
Data Sheet  
6
Rev. 2.0, 2005-04-18  
TLE 6285  
S ta rt U p  
P o w e r U p  
N o rm a l M o d e  
V C C  
O N  
E N LIN  
H igh  
IN H O  
H ig h  
E N L IN  
H ig h  
S ta n d -B y  
E N L IN  
L o w  
V C C  
O N  
R x D  
E N L IN IN H O  
L ow H ig h  
1)  
3)  
L o w  
H ig h  
E N L IN  
H ig h  
O N )  
(
V C C I  
W ak e U p  
t
> tW A K E  
S le e p M o d e  
V C C  
E N LIN  
L ow  
IN H O  
2 )  
F lo a tin g O F F  
1 ) A fte r w a k e -u p v ia bu s  
2 ) O N w h e n IN H O n o t c o n n e cte d to IN H I  
3 ) A fte r s tart u p  
A E A 034 51.V S D  
Figure 3  
Operation Mode State Diagram  
Operation Modes  
In order to reduce the current consumption the TLE 6285 offers a sleep operation mode.  
This mode is selected by switching the enable input ENLIN low (see Figure 3,  
Operation Mode State Diagram). In the sleep mode a voltage regulator can be  
controlled via the INHO output in order to minimize the current consumption of the whole  
application. A wake-up caused by a message on the communication bus automatically  
enables the voltage regulator by switching the INHO output high. In parallel the wake-up  
is indicated by setting the RxD output low. When entering the normal mode this wake-up  
flag is reset and the RxD output is released to transmit the bus data.  
Data Sheet  
7
Rev. 2.0, 2005-04-18  
 
TLE 6285  
In case the voltage regulator control input is not connected to INH output or the  
microcontroller is active respectively, the TLE 6285 can be set in normal operation mode  
without a wake-up via the communication bus.  
LIN Transceiver  
The LIN Transceiver has already a pull-up resistor of 30 kas termination implemented.  
There is also a diode in this path, to protect the circuit from feedback of voltages from  
the bus line to the power supply. To configure the TLE 6285 as a master node, an  
additional external termination resistor of 1 kis required. To avoid reverse currents  
from the bus line into the battery supply line in case of an unpowered node, it is also  
recommended to place a diode in series to the external pull-up. For small systems (low  
bus capacitance) the EMC performance of the system is supported by an additional  
capacitor of at least 1 nF in the master node (see Figure 5, Application Example).  
An capacitor of 10 µF at the supply voltage input VS buffers the input voltage. In  
combination with the required reverse polarity diode this prevents the device from  
detecting power down conditions in case of negative transients on the supply line.  
Input Capacitor  
The input capacitor CI is necessary for compensation of line influences. Using a resistor  
of approx. 1 in series with CI, the oscillating circuit consisting of input inductivity and  
input capacitance can be damped. The output capacitor is necessary for the stability of  
the regulating circuit. Stability is guaranteed at values 22 µF and an ESR of 5 Ω  
within the operating temperature range. For small tolerances of the reset delay the  
spread of the capacitance of the delay capacitor and its temperature coefficient should  
be noted.  
Voltage Regulator  
The TLE 6285 incorporates a PNP based very low drop linear voltage regular. It  
regulates the output voltage to VCC = 5 V for an input voltage range of 6 V VI 35V.  
The control circuit protects the device against potential caused by damages overcurrent  
and overtemperature.  
The internal control circuit achieves a 5 V output voltage with a tolerance of ±2% in the  
temperature range of Tj = -40 to 125 °C.  
The device includes a power on reset and an under voltage reset function with adjustable  
reset delay time and adjustable reset switching threshold as well as a sense control/early  
warning function. The device includes an inhibit function to disable it when the ECU is  
not used for example while the motor is off.  
The reset logic compares the output voltage VCC to an internal threshold. If the output  
voltage drops below this level, the external reset delay capacitor CD is discharged. When  
VD is lower than VLD, the reset output RO is switched Low. If the output voltage drop is  
Data Sheet  
8
Rev. 2.0, 2005-04-18  
TLE 6285  
very short, the VLD level is not reached and no reset-signal is asserted. This feature  
avoids resets at short negative spikes at the output voltage e.g. caused by load changes.  
As soon as the output voltage is more positive than the reset threshold, the delay  
capacitor is charged with constant current. When the voltage reaches VUD the reset  
output RO is set High again.  
The reset threshold is either the internal defined VRT voltage (typical 4.6 V) or can be  
lowered by a voltage level at the RTh input down to 3.5 V. The reset delay time and the  
reset reaction time are defined by the external capacitor CD. The reset function is active  
down to VI = 1 V.  
The device is capable to supply 150 mA. For protection at high input voltage above 25 V,  
the output current is reduced (SOA protection).  
Reset  
The power on reset feature is necessary for a defined start of the microprocessor when  
switching on the application. For the reset delay time after the output voltage of the  
regulator is above the reset threshold, the reset signal is set High again. The reset delay  
time is defined by the reset delay capacitor CRD at pin RD (refer to Figure 4 and  
Figure 5).  
The undervoltage reset circuitry supervises the output voltage. In case VQ decreases  
below the reset threshold the reset output is set LOW after the reset reaction time. The  
reset LOW signal is generated down to an output voltage VQ to 1 V. Both the reset  
reaction time and the reset delay time is defined by the capacitor value.  
The power on reset delay time is defined by the charging time of an external delay  
capacitor CD.  
CD = (td × ID) / V  
(1)  
Definitions:  
CD = reset delay capacitor  
td = reset delay time  
V = VUD, typical 1.8 V for power up reset  
V = VUD - VLD, typical 1.35 V for undervoltage reset  
ID = charge current typical 6.5 µA  
For a delay capacitor CD = 100 nF the typical power on reset delay time is 28 ms.  
The reset reaction time tRR is the time it takes the voltage regulator to set reset output  
LOW after the output voltage has dropped below the reset threshold. It is typically 1 µs  
for delay capacitor of 100 nF. For other values for CD the reaction time can be estimated  
using the following equation:  
tRR = 10 ns / nF × CD  
(2)  
Data Sheet  
9
Rev. 2.0, 2005-04-18  
TLE 6285  
The reset output is an open collector output with a pull-up resistor of typical 20 kto Q.  
An external pull-up can be added with a resistor value of at least 5.6 k.  
In addition the reset switching threshold can be adjusted by an external voltage divider.  
The feature is useful for microprocessors which guarantee safe operation down to  
voltages below the internally set reset threshold of 4.65 V typical.  
If the internal used reset threshold of typical 4.65 V is used, the pin RTh has to be  
connected to GND.  
If a lower reset threshold is required by the system, a voltage divider defines the reset  
threshold VRth between 3.5 V and 4.60 V:  
VRth = VRADJ TH × (R1 + R2) / R2  
(3)  
VRADJ TH is typical 1.36 V.  
Data Sheet  
10  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 2  
Absolute Maximum Ratings  
Symbol Limit Values Unit  
Parameter  
Remarks  
Min.  
Max.  
Voltages  
Supply voltage  
Battery supply voltage  
Bus input voltage  
Bus input voltage  
VCC  
VS  
-0.3  
-0.3  
-20  
6
V
V
V
V
V
40  
32  
40  
Vbus  
Vbus  
VI  
-20  
t < 1 s  
Logic voltages at EN, TxD,  
RxD  
-0.3  
VCC  
+ 0.3  
0 V < VCC < 5.5 V  
Input voltages at INHO  
VINHO  
-0.3  
VS  
V
+ 0.3  
Output current at INHO  
Reset output voltage  
Reset delay voltage  
IINHO  
VR  
20  
7
mA  
V
-0.3  
-0.3  
-0.3  
-40  
-0.3  
-10  
-4  
VD  
7
V
Output voltage on VCCO  
INHI input voltage  
VQ  
7
V
VINH  
VTh  
ITh  
40  
7
V
Reset Threshold voltage  
Reset Threshold current  
V
10  
4
mA  
kV  
Electrostatic discharge  
VESD  
human body model  
voltage at VS, Bus  
(100 pF via 1.5 k)  
Electrostatic discharge  
voltage  
VESD  
-2  
2
kV  
human body model  
(100 pF via 1.5 k)  
Temperatures  
Junction temperature  
Tj  
-40  
150  
°C  
Note: Maximum ratings are absolute ratings; exceeding any one of these values may  
cause irreversible damage to the integrated circuit.  
Data Sheet  
11  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 3  
Operating Range  
Symbol Limit Values Unit  
Parameter  
Remarks  
Min.  
4.5  
6
Max.  
5.5  
Supply voltage  
VCC  
VS  
Tj  
V
Battery Supply Voltage  
Junction temperature  
35  
V
-40  
150  
°C  
Thermal Shutdown (junction temperature)  
Thermal shutdown temp.  
Thermal shutdown hyst.  
Thermal Resistances  
Junction ambient  
TjSD  
150  
170  
10  
190  
°C  
T  
K
Rthj-a  
80  
K/W  
PCB heat sink area  
300mm2  
Data Sheet  
12  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Current Consumption  
Current consumption at  
IBat  
IBat  
ICCI  
ICCI  
IBat  
ICCI  
1.1  
1.9  
0.4  
0.4  
20  
3
3
mA recessive state;  
VBat (LIN + Voltage  
INHI = INHO = HIGH;  
TxD = VCC  
mA dominant state;  
INHI = INHO = HIGH;  
TxD = VCC  
Regulator)  
V
4
V
Current consumption at  
0.7  
0.8  
40  
10  
mA recessive state;  
LDO sleep;  
VCCI (LIN only)  
V
TxD = VCC  
mA dominant state;  
LDO sleep;  
V
TxD = 0 V  
Current consumption  
sleep mode  
(LIN + Voltage Regulator)  
µA  
µA  
sleep mode;  
INHI = INHO = LOW;  
(LIN only)  
sleep mode;  
INHI = INHO = LOW  
Current consumption  
LDO (Voltage Regulator,  
LIN in sleep mode)  
IBat  
IBat  
170 500  
µA  
I
I
CCO = 10 mA;  
CCO = 50 mA;  
0.7  
2
mA  
Enable Input (pin ENLIN)  
HIGH level input voltage VEN,on  
2.8  
0.7 × V  
normal mode  
threshold  
VCC  
LOW level input voltage VEN,off  
0.3 × 2.2  
V
low power mode  
threshold  
VCC  
EN input hysteresis  
VEN,hys 300 600 900  
mV  
EN pull-down resistance REN  
15  
30  
60  
kΩ  
Inhibit Output (pin INHO)  
IINH = - 15 mA  
Inhibit Ron resistance  
RonINHO  
65  
120  
Data Sheet  
13  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Leakage current  
IINHO,lk -5.0  
5.0  
µA  
sleep mode;  
INHO = 0 V  
V
VQ Output (pin VCCO  
)
Output voltage  
VQ  
VQ  
4.90 5.00 5.10  
4.85 5.00 5.15  
250 400 500  
V
V
1 mA IQ 100 mA;  
6 V VI 16 V  
Output voltage  
IQ 150 mA;  
6 V VI 16 V  
Current limit  
IQ  
mA  
V
Drop voltage  
Load regulation  
Line regulation  
Vdr  
0.22 0.5  
IQ = 100 mA1)  
VQ  
VQ  
5
30  
25  
mV IQ = 1 mA to 100 mA  
10  
mV VI = 6 V to 28 V;  
IQ = 1 mA  
Power Supply Ripple  
rejection  
PSRR  
66  
dB  
2) fr = 100 Hz;  
Vr = 1 Vpp;  
IQ = 100 mA  
Data Sheet  
14  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Reset Generator (pins RO, RD)  
Switching threshold  
Reset pull-up  
Vrt  
4.50 4.60 4.80  
V
RRO  
VR  
10  
20  
40  
kΩ  
V
Reset low voltage  
0.17 0.40  
3)VQ < 4.5 V;  
internal RRO;  
IR = 1 mA  
External reset pull-up  
RRO ext 5.6  
kΩ  
Pull-up resistor pin  
RO to pin VCCO  
Delay switching threshold VDT  
Switching threshold  
Reset delay low voltage VD  
1.5  
1.85 2.2  
V
V
V
VST  
0.35 0.50 0.60  
0.1  
VQ < VRT  
VD = 1 V  
Charge current  
Ich  
td  
4.0  
17  
0.5  
8.0  
28  
1.2  
12.0 µA  
Reset delay time  
Reset reaction time  
35  
ms CD = 100 nF  
tRR  
3.0  
µs  
CD = 100 nF  
VQ > 3.5 V  
Reset adjust switching  
threshold  
VRADJ TH 1.26 1.36 1.44  
V
Inhibit Input (pin INHI)  
Inhibit OFF voltage range VINHI OFF  
0.8  
V
VQ off  
VQ on  
Inhibit ON voltage range VINHI ON 3.5  
V
High input current  
Low input current  
IINHI ON  
3
8
µA  
µA  
V
V
INHI = 5 V  
INHI = 0 V  
IINHI OFF  
0.5  
2
Receiver Output RxD  
HIGH level output current IRD,H  
LOW level output current IRD,L  
-1.2 -0.8 -0.5 mA VRD = 0.8 × VCC  
0.5 0.8 1.2 mA VRD = 0.2 × VCC  
Data Sheet  
15  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Transmission Input TxD  
HIGH level input voltage VTD,H  
2.9  
0.7 × V  
recessive state  
threshold  
VCC  
TxD input hysteresis  
VTD,hys 300 700 900  
mV  
V
LOW level input voltage VTD,L  
0.3 × 2.1  
dominant state  
threshold  
VCC  
TxD pull-up current  
ITD  
-150 -110 -70  
µA  
V
TxD < 0.3 VCC  
Bus Receiver  
Receiver threshold  
voltage, recessive to  
dominant edge  
Vbus,rd  
0.44 0.48 –  
× VS × VS  
V
-8 V < Vbus < Vbus,dom  
Receiver threshold  
voltage, dominant to  
recessive edge  
Vbus,dr  
0.52 0.60  
× VS × VS  
V
V
V
bus,rec < Vbus < 20 V  
Receiver hysteresis  
Vbus,hys 0.02 0.04 0.1 × mV  
× VS × VS VS  
bus,hys = Vbus,rec -  
Vbus,dom  
Receiver threshold center Vbus,cnt 0.475 0.5 × 0.525  
LIN2.0 table 3.1  
voltage  
× VS VS  
× VS  
Input leakage current  
Ibus,lek  
-1  
mA  
V
Vbus = 0V, Vbat = 12V,  
pull-up resistor as  
specified in LIN2.0  
Wake-up threshold  
voltage  
Vwake  
0.40 0.55 0.60  
× VS × VS × VS  
Bus Transmitter  
Bus recessive output  
voltage  
Vbus,rec 0.9 × –  
VS  
2
V
V
V
TxD = VCC  
VS  
Bus dominant output  
voltage  
Vbus,dom  
0
V
TxD = 0 V  
7.3V<VS<27V  
TxD = 0 V  
6V<VS<7.3V  
0
1.2  
150  
V
V
Bus short circuit current Ibus,sc  
40  
85  
mA  
V
bus,short = 13.5 V  
Data Sheet  
16  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Leakage current  
Ibus,lk  
-1  
-
mA VCC = 0 V, VS = 0 V,  
V
bus = -8 V,  
10  
20  
µA  
kΩ  
VCC = 0 V,  
VS = 13.5V,  
V
bus = 20 V,  
Bus pull-up resistance  
Rbus  
20  
30  
47  
Data Sheet  
17  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Dynamic Transceiver Characteristics  
60% > Vbus > 40%  
Falling edge slew rate  
Rising edge slew rate  
Slope symmetry  
Sbus(L)  
-3  
-2.0 -1  
V/µs  
V/µs  
1 µs<(τ = RBUS× CBUS)<5µs4)  
VCC = 5 V;  
VS = 13.5 V  
40% < Vbus < 60%  
1 µs<(τ = RBUS× CBUS)<5µs4)  
VCC = 5 V;  
Sbus(H)  
1
1.5  
3
VS = 13.5 V  
tslopesym -5  
1
5
4
µs  
µs  
tfslope - trslope  
Propagation delay  
TxD LOW to bus  
td(L),T  
td(H),T  
td(L),R  
VCC = 5 V  
VCC = 5 V  
VCC = 5 V;  
Propagation delay  
TxD HIGH to bus  
1
1
4
6
µs  
µs  
Propagation delay  
bus dominant to RxD  
LOW  
C
RxD = 20 pF  
Propagation delay  
bus recessive to RxD  
HIGH  
td(H),R  
1
6
µs  
VCC = 5 V;  
RxD = 20 pF  
C
Receiver delay symmetry tsym,R  
-2  
-2  
2
2
µs  
µs  
t
t
sym,R = td(L),R - td(H),R  
sym,T = td(L),T - td(H),T  
Transmitter delay  
symmetry  
tsym,T  
0.396  
duty cycle 14)  
THRec(max) = 0.744 × VS;  
THDom(max) = 0.581 × VS;  
VS = 7.0 … 18 V;  
Duty cycle D1  
tduty1  
µs  
tbit = 50 µs;  
D1 = tbus_rec(min)/2 tbit;  
0.581  
duty cycle 24)  
THRec(max) = 0.422× VS;  
THDom(max) = 0.264 × VS  
VS = 7.6 … 18 V;  
Duty cycle D2  
tduty2  
µs  
tbit = 50 µs;  
D2 = tbus_rec(max)/2 tbit;  
Wake-up delay time  
Data Sheet  
twake  
30  
100 150  
170  
µs  
µs  
Tj 125 °C  
Tj 150 °C 2)  
18  
Rev. 2.0, 2005-04-18  
TLE 6285  
Table 4  
Electrical Characteristics (cont’d)  
VCC = 5V; VS = 13.5V; RL = 500 ; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with  
respect to ground; positive current flowing into pin; unless otherwise specified.  
Parameter  
Sym-  
bol  
Limit Values  
Unit Remarks  
Min. Typ. Max.  
Delay time for change  
sleep/stand by mode -  
normal mode  
tsnorm  
50  
µs  
µs  
Delay time for change  
normal mode - sleep  
mode  
tnsleep  
50  
1) Drop voltage = VI - VQ (measured when the output voltage has dropped 100 mV from the nominal value  
obtained at 13.5 V input)  
2) Not subject to production test, specified by design.  
3) The reset output is low within the range VQ = 1 V to Vrt  
4) Bus load conditions concerning LIN spec 2.0 Cbus, Rbus = 1 nF, 1 k/ 6.8 nF, 660 / 10 nF, 500 Ω  
Data Sheet  
19  
Rev. 2.0, 2005-04-18  
TLE 6285  
Diagrams  
V
I
<
trr  
t
VQ  
VQ, rt  
ID, ch  
d
d
V
t
t
=
VD  
CD  
VDU  
VDRL  
trd  
trr  
t
VRO  
t
Power-ON  
Reset  
Over-  
temperature  
Voltage Drop Under-  
at Input voltage  
Secondary  
Spike  
Load  
Bounce  
AET03066  
Figure 4  
Time Response  
Data Sheet  
20  
Rev. 2.0, 2005-04-18  
TLE 6285  
Typical Performance Characteristics  
Output Voltage VQ (PIN VCCO) versus  
Output Voltage VQ (PIN VCCO) versus  
Input Voltage VI (PIN VBAT  
)
Temperature Tj  
AED01671  
AED01808  
5.2  
12  
VQ  
VQ  
V
V
5.1  
5.0  
4.9  
4.8  
4.7  
4.6  
10  
VΙ = 13.5 V  
8
6
RL = 50  
4
2
0
-40  
0
40  
80  
120 C 160  
0
2
4
6
8
V 10  
Tj  
VΙ  
Data Sheet  
21  
Rev. 2.0, 2005-04-18  
TLE 6285  
Charge Current Ich versus  
Temperature Tj  
Drop Voltage Vdr versus  
Output Current IQ (PIN VCCO  
)
AED03108  
AED02929  
12  
400  
mV  
µA  
10  
ID  
VDR  
125 ˚C  
300  
8
6
4
2
0
25 ˚C  
250  
V
= 13.5 V  
I
VD = 1 V  
200  
150  
100  
50  
0
-40  
0
40  
80  
120 ˚C 160  
0
50  
100  
150 mA 200  
Tj  
IQ  
Switching Voltage Vdt and Vst versus  
Temperature Tj  
Reset Adjust Switching Threshold  
RADJTH versus Temperature Tj  
V
AED01804  
AED03109  
3.2  
1.5  
V
VD  
V
VRADJTH  
2.8  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
VΙ = 13.5 V  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
VUD  
V
LD  
-40  
0
40  
80  
120 C 160  
-40  
0
40  
80  
120 ˚C 160  
Tj  
Tj  
Data Sheet  
22  
Rev. 2.0, 2005-04-18  
TLE 6285  
Sense Threshold Vsi  
Output Current Limit IQ (PIN VCCO  
)
versus Temperature Tj  
versus Input Voltage VI (PIN VBAT  
)
AED02933  
AED03110  
350  
mA  
300  
1.6  
Ι Q  
V
VSi  
1.5  
Sense Output High  
Sense Output Low  
250  
200  
150  
100  
50  
1.4  
1.3  
1.2  
1.1  
1.0  
Tj = 25 C  
Tj = 125 C  
0
-40  
0
40  
80  
120 ˚C 160  
0
10  
20  
30  
40  
V 50  
Tj  
VΙ  
Current Consumption Iq versus  
Output Current IQ  
Current Consumption Iq versus  
Output Current IQ  
AED02931  
AED02932  
1.0  
mA  
5
mA  
Iq  
Iq  
0.8  
0.6  
0.4  
0.2  
0
4
3
2
1
0
0
10  
20  
30  
40  
mA 60  
0
50  
100  
150 mA 200  
IQ  
IQ  
Data Sheet  
23  
Rev. 2.0, 2005-04-18  
TLE 6285  
Application  
V
L I N B u s  
B
a
t
M
a s t e r  
N
o d e  
T L E 6 2 8 5  
G
2 2 µ F  
+
1 3  
3
7
V
R O  
B
a
t
1 0 0  
E N L I N  
n F  
6
µ P  
R
x D  
1
k
1 1  
T x D  
1 2  
5
1 0  
V
B u s  
C
C
I
G
N D  
1 n F  
1 0 0  
n F  
1 0 0  
n F  
I N H O  
5
V
4
V
C
C
O
2
R
I N H I  
R D  
1
1 5  
1 4  
+
R
2 2 µ F  
t h  
C
D
R
G
N
D
2
1 0 0 n F  
1 , 8 , 9 , 1 6  
E C U  
1
S l a v e N o d e  
T L E 6 2 8 5  
G
1 3  
3
7
V
R O  
B
a
t
+
1 0 0  
n F  
2 2 µ F  
E N L I N  
6
µ P  
R
x D  
1 1  
T x D  
1 2  
1 0  
V
B u s  
C
C
I
G
N D  
1 0 0  
n F  
1 0 0  
n F  
2 2 0  
5
I N H O  
p F  
5
V
4
V
C
C
O
2
R
R
I N H I  
R D  
1
1 5  
1 4  
+
R
2 2 µ F  
t h  
C
D
G
N
D
2
1 0 0 n F  
1 , 8 , 9 , 1 6  
E C U  
X
A
E
A
0
3
4
4
8
. V  
S
D
Figure 5  
Application Example  
Data Sheet  
24  
Rev. 2.0, 2005-04-18  
TLE 6285  
Package Outlines  
±0.08  
0.33  
x 45˚  
0.64  
1)  
4-0.2  
1.27  
C
±0.25  
0.1  
+0.1  
0.41  
-0.06  
M
0.2 A C 16x  
±0.2  
6
16  
1
9
8
1)  
10 -0.2  
A
Index Marking  
1) Does not include plastic or metal protrusion of 0.25 max. per side  
GPS09453  
Figure 6  
P-DSO-16-11 (Plastic Dual Small Outline)  
You can find all of our packages, sorts of packing and others in our  
Infineon Internet Page “Products”: http://www.infineon.com/products.  
Dimensions in mm  
SMD = Surface Mounted Device  
Data Sheet  
25  
Rev. 2.0, 2005-04-18  

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