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元器件品牌
SGB20N60
[INFINEON]
Fast S-IGBT in NPT-technology; 快速S- IGBT在NPT技术
元器件型号：
SGB20N60
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Fast S-IGBT in NPT-technology
快速S- IGBT在NPT技术
双极性晶体管
PDF文件：
总12页 (文件大小：269K)
下载文档：
下载PDF数据表文档文件
型号参数：SGB20N60参数
查看货源
SGB20N60_06
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
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INFINEON
SGB20N60ATMA1
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3
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0
INFINEON
SGB20UF
60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UF
HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFS
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
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SSDI
SGB20UFS
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
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SSDI
SGB20UFSMS
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFSMS
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFSMSS
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFSMSS
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN
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SSDI
SGB20UFSMSTX
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFSMSTXV
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
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SSDI
SGB20UFSMSTXV
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN
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SSDI
SGB20UFTX
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
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SSDI
SGB20UFTXV
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
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SSDI
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