FP50N06L [INTERSIL]

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs; 50A , 60V , 0.022欧姆,逻辑电平N沟道功率MOSFET
FP50N06L
元器件型号: FP50N06L
生产厂家: INTERSIL CORPORATION    INTERSIL CORPORATION
描述和应用:

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
50A , 60V , 0.022欧姆,逻辑电平N沟道功率MOSFET

PDF文件: 总8页 (文件大小:414K)
下载文档:  下载PDF数据表文档文件
型号参数:FP50N06L参数

FP50R06KE3

EconoPIM2 module with the trench/fieldstop IGBT and EmCon3 diode

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71 EUPEC

FP50R06KE3BOSA1

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, MODULE-24

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0 INFINEON

FP50R06KE3G

EconoPIM3 module with the trench/fieldstop IGBT and EmCon3 diode

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32 EUPEC

FP50R06W2E3

EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC

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160 INFINEON

FP50R06W2E3_B11

EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

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47 INFINEON

FP50R06W2E3BOMA1

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R07N2E4

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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3 INFINEON

FP50R07N2E4_B11

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R07N2E4B11BOSA1

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R07N2E4BOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FP50R07U1E4

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP50R07U1E4BPSA1

Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R0R07N2E4

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R12KE3

Elektrische Eigenschaften / Electrical properties

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536 EUPEC

FP50R12KE3V1

IGBT Module

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197 ETC