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FP50R06W2E3_B11 [INFINEON]

EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode; EasyPIM ™ 2B压接模块与沟槽/场终止IGBT3和发射Controlled3二极管
FP50R06W2E3_B11
元器件型号： FP50R06W2E3_B11
生产厂家： INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用：

EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
EasyPIM ™ 2B压接模块与沟槽/场终止IGBT3和发射Controlled3二极管

晶体 二极管 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件： 总11页 (文件大小：517K)
下载文档：  下载PDF数据表文档文件
型号参数：FP50R06W2E3_B11参数
 查看货源

FP50R06W2E3BOMA1

 Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R07N2E4

 Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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3 INFINEON

FP50R07N2E4_B11

 Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R07N2E4B11BOSA1

 Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R07N2E4BOSA1

 Insulated Gate Bipolar Transistor

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0 INFINEON

FP50R07U1E4

 Insulated Gate Bipolar Transistor,

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1 INFINEON

FP50R07U1E4BPSA1

 Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R0R07N2E4

 Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R12KE3

 Elektrische Eigenschaften / Electrical properties

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536 EUPEC

FP50R12KE3V1

 IGBT Module

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197 ETC

FP50R12KS4CBOSA1

 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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2 INFINEON

FP50R12KS4CV2

 IGBT Module

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183 ETC

FP50R12KT3

 IGBT-modules

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674 EUPEC

FP50R12KT4

 EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode

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379 INFINEON

FP50R12KT4_B11

 EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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116 INFINEON
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