HS-3374RH [INTERSIL]

Radiation Hardened 8-Bit Bidirectional CMOS/TTL Level Converter; 抗辐射的8位双向CMOS / TTL电平转换器
HS-3374RH
型号: HS-3374RH
厂家: Intersil    Intersil
描述:

Radiation Hardened 8-Bit Bidirectional CMOS/TTL Level Converter
抗辐射的8位双向CMOS / TTL电平转换器

转换器 电平转换器
文件: 总6页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HS-3374RH  
Radiation Hardened  
8-Bit Bidirectional CMOS/TTL Level Converter  
March 1996  
Features  
Pinout  
HS-3374RH  
MIL-STD-1835, CDIP2-T22  
(SBDIP)  
• Devices QML Qualified in Accordance with MIL-PRF-38535  
• Detailed Electrical and Screening Requirements are  
Contained in SMD# 5962-9XXXX and Intersil’ QM Plan  
TOP VIEW  
• Radiation Hardened EPI-CMOS  
- Total Dose 1 x 105 RAD(Si)  
VDD  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
1
2
3
4
5
6
7
8
9
22  
21  
VCC  
B0  
- Latch-Up Immune > 1 x 1012 RAD (Si)/s (Note 1)  
• Low Propagation Delay Time  
20 B1  
19 B2  
18 B3  
- Typical CMOS to TTL Pre-RAD 40ns  
- Typical CMOS to TTL Post 100K RAD 40ns  
- Typical TTL to CMOS Pre-RAD 50ns  
- Typical TTL to CMOS Post 100K RAD 50ns  
TTL  
CMOS  
INPUT/OUTPUT  
INPUT/OUTPUT  
17  
B4  
• Low Standby Power  
16 B5  
15 B6  
• +10V CMOS and +5V TTL Power Supply Inputs  
• Eight Non-inverting Three-State Input/Output Channels  
• No External TTL Input Pull-Up Resistors Required  
• High TTL Sink Current  
14  
13  
12  
B7  
ENABLE 10  
11  
DISABLE  
NC  
GND  
• Equivalent to Sandia SA2996  
• Military Temperature Range -55oC to +125oC  
Description  
Functional Diagram  
The Intersil HS-3374RH is  
a radiation hardened 8-bit  
bidirectional level converter designed to interface CMOS logic  
levels with TTL logic levels in radiation hardened bus oriented  
systems. The HS-3374RH is fabricated using a radiation  
hardened EPI-CMOS process and features eight parallel  
bidirectional buffer/level converters.  
VDD = 1  
VCC = 22  
GND = 11  
DISABLE  
13  
8
8
Two control inputs, ENABLE and DISABLE, are used to deter-  
mine the direction of data flow, and to set both the in puts and  
outputs in the high impedance state. The control inputs may be  
driven by either TTL or CMOS logic drivers capable of sinking  
one standard TTL load.  
TTL  
OUT (IN)  
14-21  
CMOS  
IN/OUT  
2-9  
LEVEL  
SHIFTER  
ENABLE  
10  
The HS-3374RH is a non-inverting version of the industry  
standard CD40116. The non-inverting outputs of the  
HS-3374RH reduce PC board chip count by eliminating the  
need to restore data back to a non-inverted format.  
NOTE:  
10  
1. For operation at 10V and transient levels above 1 x 10 RAD (Si)/s,  
please refer to Application Note 401.  
Ordering Information  
PART NUMBER  
5962R9XXXX01QRC  
5962R9XXXX01VRC  
HS1-3374 (SAMPLE)  
TEMPERATURE RANGE  
SCREENING LEVEL  
PACKAGE  
22 Lead SBDIP  
o
o
MIL-PRF-38535 Level Q  
MIL-PRF-38535 Level V  
Sample  
-55 C to +125 C  
o
o
-55 C to +125 C  
22 Lead SBDIP  
22 Lead SBDIP  
o
+25 C  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
Spec Number 518052  
File Number 3038.1  
1
Specifications HS-3374RH  
Absolute Maximum Ratings  
Thermal Information  
o
o
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+11.0V  
I/O Voltage Applied. . . . . . . . . . . . . . . . . . . GND-0.3V to VDD+0.3V  
Thermal Resistance (Typical)  
θ
( C/W)  
θ
( C/W)  
JC  
JA  
SBDIP Package. . . . . . . . . . . . . . . . . .  
74.8  
12.3  
o
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C  
Maximum Package Power Dissipation at +125 C  
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.67W  
If Device Power Exceeds Package Dissipation Capability, Provide  
Heat Sinking or Derate Linearly at the Following Rate:  
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1  
o
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.4mW/ C  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
Operating Voltage Range  
VDD . . . . . . . . . . . . . +9.5V to +10.5V Input Low Voltage (CMOS) . . . . . . . . . . . . . . . . . . . . . . . GND to 1V  
VCC . . . . . . . . . . . . +4.75V to +5.25V Input High Voltage (CMOS). . . . . . . . . . . . . . . . . .VDD-1.0V to VDD  
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C  
Input Voltage Range  
Input Low Voltage (TTL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V  
Input High Voltage (TTL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8V  
Data Inputs (CMOS) . . . . . . . . . . . . . . . . . . .GND-0.3 to VDD+0.3  
Data Inputs (TTL) . . . . . . . . . . . . . . . . . . . . .GND-0.3 to VCC+0.3  
Enable, Disable Inputs . . . . . . . . . . . . . . . . .GND-0.3 to VDD+0.3  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
GROUP A  
PARAMETER  
SYMBOL  
CONDITIONS  
SUBGROUPS TEMPERATURE  
MIN  
MAX  
UNITS  
ENABLE AND DISABLE IINPUTS  
o
o
Input Leakage Current  
IIH CMOS VDD = 10.5V, VCC = 5.25V,  
VIN = 10.5V, Floating Outputs  
1, 2, 3  
-55 C, +25 C,  
-
1
µA  
o
+125 C  
TTL INPUT TO CMOS OUTPUTS  
o
o
Input Leakage Current  
IIL IIH  
VDD = 10.5V, VCC = 5.25V,  
VIN = 0.8V, Other Inputs at 2.8V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
-55 C, +25 C,  
-1  
-
-
1
-
µA  
µA  
V
o
+125 C  
o
o
VDD = 10.5V, VCC = 5.25V,  
VIN = 2.8V, other Inputs = 0.8V  
-55 C, +25 C,  
o
+125 C  
o
o
High Level Output  
Voltage  
VOH  
VOL  
VDD = 9.5V, VCC = 4.75V,  
VIH = 2.8V, VIL = 0.8V,  
IOH = -2.0mA  
-55 C, +25 C,  
9
o
+125 C  
o
o
Low level output  
Voltage  
VDD = 10.5V, VCC = 5.25V,  
VIH = 2.8V, VIL 0.8V,  
IOL = 2.0mA  
1, 2, 3  
-55 C, +25 C,  
-
0.5  
V
o
+125 C  
CMOS to TTL OUTPUTS  
o
o
High Level Output  
Voltage  
VOH  
VOL  
VDD = 9.5, VCC = 4.75V,  
VIH = 8.5V, VIL = 1.0V,  
IOH = -2.0mA  
1, 2, 3  
1, 2, 3  
-55 C, +25 C,  
3
-
-
V
V
o
+125 C  
o
o
Low Level Output  
Voltage  
VDD = 10.5V, VCC = 5.25V,  
VIH = 9.5V, VIL = 1.0V,  
IOL = 11mA  
-55 C, +25 C,  
0.4  
o
+125 C  
o
o
Output Leakage  
Current  
IOZL  
IOZH  
VDD = 10.5V, VCC = 5.25V,  
VIN = 0V, All other pins high  
1, 2, 3  
1, 2, 3  
-55 C, +25 C,  
-10  
-
-
µA  
µA  
o
+125 C  
o
o
VDD = 10.5V, VCC = 5.25V,  
VIN = 2.8V, All other pins at  
GND  
-55 C, +25 C,  
10  
o
+125 C  
Spec Number 518052  
2
Specifications HS-3374RH  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
LIMITS  
GROUP A  
PARAMETER  
SYMBOL  
CONDITIONS  
SUBGROUPS TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
Functional Tests  
FT  
CMOS:  
7, 8A, 8B  
-55 C, +25 C,  
-
-
-
o
1.) VDD = 10.5V, VCC = 5.25V  
2.) VDD = 9.5V, VCC = 4.75V,  
VIH = VDD-1V, VIL = 1V  
TTL:  
+125 C  
1.) VDD = 10.5V, VCC = 5.25V  
2.) VDD = 9.5V, VCC = 4.75V,  
VIH = 2.8V, VIL = 0.8V  
o
o
Static Current 1  
Static Current 2  
Static Current  
SIDD1  
SIDD2  
SICC  
VDD = 10.5V, VCC = 5.25V,  
EN = 2.8V, DISABLE = 2.8V,  
Floating Outputs  
1, 2, 3  
1, 2, 3  
1, 2, 3  
-55 C, +25 C,  
-
-
-
300  
100  
5
µA  
µA  
µA  
o
+125 C  
o
o
VDD = 10.5V, VCC = 5.25V, EN  
= 0V, DISABLE = 2.8V, Floating  
Outputs  
-55 C, +25 C,  
o
+125 C  
o
o
VDD = 10.5, VCC = 5.25V,  
EN = 0V, DISABLE = 2.8V,  
Floating Output, Measure VCC  
pin  
-55 C, +25 C,  
o
+125 C  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
GROUP A SUB-  
LIMITS  
PARAMETER  
SYMBOL  
GROUPS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
o
Propagation Delay Times CMOS/TTL  
Data In to Data Out  
TPHLCT  
9, 10, 11  
-55 C, +25 C, +125 C  
-
-
-
-
-
-
-
-
-
-
-
40  
ns  
o
o
o
Propagation Delay Times CMOS Data  
In to Data Out  
TPLHCT  
TPHLTC  
TPLHTC  
TTHLCT  
TTLHCT  
TTHLTC  
TTLHTC  
TPHZTC  
TPZHTC  
TPLZTC  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
-55 C, +25 C, +125 C  
50  
85  
70  
20  
70  
50  
50  
90  
90  
85  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
o
o
o
Propagation Delay Times CMOS/TTL  
Data In to Data Out  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time TTL/CMOS  
Data In to Data Out  
-55 C, +25 C, +125 C  
o
o
o
Transition Time CMOS/TTL  
Input/Output  
-55 C, +25 C, +125 C  
o
o
o
Transition Time CMOS/TTL  
Input/Output  
-55 C, +25 C, +125 C  
o
o
o
Transition Time CMOS/TTL  
Input/Output  
-55 C, +25 C, +125 C  
o
o
o
Transition Time CMOS/TTL  
Input/Output  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time TTL/CMOS  
Enable to CMOS Out  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time TTL/CMOS  
Enable to CMOS Out  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time TTL/CMOS  
Enable to CMOS Out  
-55 C, +25 C, +125 C  
Spec Number 518052  
3
Specifications HS-3374RH  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
LIMITS  
GROUP A SUB-  
PARAMETER  
SYMBOL  
GROUPS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
o
Propagation Delay Time TTL/CMOS  
Enable to CMOS Out  
TPZLTC  
9, 10, 11  
-55 C, +25 C, +125 C  
-
-
-
-
-
90  
ns  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
TPHZCT  
TPZHCT  
TPLZCT  
TPZLCT  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
-55 C, +25 C, +125 C  
70  
ns  
ns  
ns  
ns  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
130  
120  
125  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
NOTE: Timings are measured with the following conditions: CL = 100pF, VDD = 9.5V, VCC = 4.75V, VIH = 8.5V (2.8V), VIL = 1.0V (0.8V).  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
PARAMETER  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
Input, Output Capacitance  
CMOS  
CI/O  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
-
13  
pF  
o
Input Capacitance  
CIN  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
-
-
15  
17  
pF  
pF  
o
Input, Output Capcitance  
TTL  
CI/O  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters  
are characterized upon initial design release and upon design changes which would affect these characteristics.  
Spec Number 518052  
4
HS-3374RH  
Functional Block Diagram  
1 OF 8 IDENTICAL CIRCUITS  
VDD  
VDD  
VCC  
DISABLE  
LEVEL  
SHIFTER  
D
E
VCC  
13  
B1 TTL  
OUTPUT  
(INPUT)  
2 (3, 4, 5, 6, 7, 8, 9)  
A1 CMOS  
INPUT (OUTPUT)  
VDD  
GND  
GND  
VDD  
D
ENABLE  
10  
21 (20, 19,  
18, 17, 16,  
15, 14)  
LEVEL  
SHIFTER  
LEVEL  
SHIFTER  
E
GND  
GND  
NOTES:  
1. Enable and disable are TTL type inputs  
2. D and E outputs are common to all 8 channels  
TRUTH TABLE  
INPUT (OUTPUT)  
TERMINAL  
OUTPUT (INPUT)  
TERMINAL  
ENABLE  
DISABLE  
FUNCTION  
DATA  
NUMBER  
DATA  
NUMBER  
X
1
0
0
1
1
Convert CMOS Level to TTL Level  
Convert TTL Level to CMOS Level  
High Impedance (Z)  
A0  
2
3
4
5
6
7
8
9
B0  
21  
20  
19  
18  
17  
16  
15  
14  
A1  
B1  
A2  
B2  
0 = Low Level 1 = High Level X = Don’t Care  
Z = High Impedance on Both CMOS and TTL sides.  
A3  
B3  
NOTE: An important caveat that is applicable to CMOS devices in  
general is that unused inputs should never be left floating. This rule  
applies to inputs connected to a three-state bus. The need for  
external pull-up resistors during three-state bus conditions is  
eliminated by the presence of regenerative latches on the following  
HS-3374RH pins: A0 - 7.  
A4  
B4  
A5  
B5  
A6  
B6  
A7  
B7  
The functional block diagram depicts one of these pins with the  
regenerative latch. When the CMOS driver assumes the high  
impedance state, the latch holds the bus in whatever logic state  
(high or low) it was before the three-state condition. A transient  
drive current of ±1.5mA at VDD/2 ±0.5V for 10ns is required to  
switch the latch. Thus, CMOS device inputs connected to the bus  
are not allowed to float during three-state conditions.  
* WARNING: Do not activate the Disable input by hardwiring to any  
TTL input pins. This is an incorrect mode of operation.  
Spec Number 518052  
5
HS-3374RH  
Metallization Topology  
DIE DIMENSIONS:  
89.4 mils x 76.0 mils x 14 mils ±1 mil  
METALLIZATION:  
Type: AlSi  
Thickness: 8kÅ ±1kÅ  
GLASSIVATION:  
Type: SiO2  
Thickness: 11kÅ ±2kÅ  
Metallization Mask Layout  
HS-3374RH  
(20) B1  
(19) B2  
A2 (4)  
A3 (5)  
(18) B3  
(17) B4  
(16) B5  
(15) B6  
(14) B7  
A4 (6)  
A5 (7)  
A6 (8)  
A7 (9)  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Spec Number 518052  
6

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