HS2-117RH-8 [INTERSIL]
Radiation Hardened Adjustable Positive Voltage Regulator; 抗辐射可调正电压稳压器
| 型号： | HS2-117RH-8 |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Adjustable Positive Voltage Regulator |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-117RH
®
Data Sheet
October 2003
FN4560.7
Radiation Hardened
Features
Adjus table Pos itive Voltage Regulator
• Electrically Screened to DSSC SMD # 5962-99547
• QML Qualified per MIL-PRF-38535 Requirements
The Radiation Hardened HS-117RH is an adjustable
positive voltage linear regulator capable of operating with
input voltages up to 40VDC. The output voltage is adjustable
from 1.2V to 37V with two external resistors. The device is
• Radiation Environment
- 300 krad (Si) (Max)
- Latch-up Immune
capable of sourcing from 5mA to 1.25A
(0.5 A
PEAK for
PEAK
Protection is provided by the on-chip
the TO-39 package).
• Superior Temperature Stability
thermal shutdown and output current limiting circuitry.
• Overcurrent and Overtemperature Protection
The Intersil HS-117RH has advantages over other industry
standard types, in that circuitry is incorporated to minimize
the effects of radiation and temperature on device stability.
Applications
• Adjustable Linear Voltage Regulators
• Adjustable Linear Current Regulators
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, the HS-117RH is immune to
single event latch-up and has been specifically designed to
provide highly reliable performance in harsh radiation
environments.
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
o
( C)
Specifications for Rad Hard QML devices are controlled by the
Defense Supply Center in Columbus (DSCC). The SMD numbers
listed here must be used when ordering.
5962F9954701VUC
5962F9954701QUC
5962F9954701VXC
5962F9954701QXC
5962F9954701VYC
5962F9954701QYC
HS2-117RH/Proto
HS9S-117RH/Proto
HSYE-117RH/Proto
HS2-117RH-Q
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
HS2-117RH-8
Detailed electrical specifications for the HS-117RH are
contained in SMD 5962-99547. A “hot-link” is provided on
our website for downloading.
HS9S-117RH-Q
HS9S-117RH-8
HSYE-117RH-Q
HSYE-117RH-8
HS2-117RH/Proto
HS9S-117RH/Proto
HSYE-117RH/Proto
Pinouts
HS2-117RH (TO-39 CAN)
BOTTOM VIEW
ADJUST
2
HSYE-117RH (SMD.5 CLCC)
OUT
3
IN
1
BOTTOM VIEW
2
1 - ADJUST
2 - IN
3 - OUT
3
HS9S-117RH (TO-257AA FLANGE MOUNT)
1
TOP VIEW
IN
3
2
1
OUT
NOTE: No current JEDEC outline for the SMD.5 package. Refer to
SMD for package dimensions. The TO-257 is a totally isolated metal
package.
ADJUST
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2003. All Rights Reserved.
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HS-117RH
Substrate
Die Characteris tics
Radiation Hardened Silicon Gate,
Dielectric Isolation
DIE DIMENSIONS
2616µm x 2794µm (103 mils x 110 mils)
483µm ±25.4µm (19 mils ±1 mil)
Backside Finish
Gold
INTERFACE MATERIALS
Glassivation
ASSEMBLY RELATED INFORMATION
Substrate Potential
Type: Silox (SiO )
Thickness: 8.0kÅ2±1.0kÅ
Unbiased (DI)
Top Metallization
ADDITIONAL INFORMATION
Worst Case Current Density
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
5
2
<2.0 x 10 A/cm
Transistor Count
95
Metallization Mas k Layout
HS-117RH
V
V
IN
IN
V
V
OUT
OUT
ADJ
V
OUTK
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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