ISL6520IBZ-T [INTERSIL]

Single Synchronous Buck Pulse-Width Modulation (PWM) Controller; 单同步降压脉宽调制( PWM )控制器
ISL6520IBZ-T
型号: ISL6520IBZ-T
厂家: Intersil    Intersil
描述:

Single Synchronous Buck Pulse-Width Modulation (PWM) Controller
单同步降压脉宽调制( PWM )控制器

开关 光电二极管 控制器
文件: 总11页 (文件大小:401K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISL6520  
®
Data Sheet  
October 4, 2005  
FN9009.4  
Single Synchronous Buck Pulse-Width  
Modulation (PWM) Controller  
Features  
• Operates from +5V Input  
The ISL6520 makes simple work out of implementing a  
complete control and protection scheme for a DC/DC  
stepdown converter. Designed to drive N-channel MOSFETs  
in a synchronous buck topology, the ISL6520 integrates the  
control, output adjustment, monitoring and protection  
functions into a single 8-pin package.  
• 0.8V to V Output Range  
IN  
- 0.8V Internal Reference  
- ±1.5% Over Line Voltage and Temperature  
• Drives N-Channel MOSFETs  
• Simple Single-Loop Control Design  
- Voltage-Mode PWM Control  
The ISL6520 provides simple, single feedback loop, voltage-  
mode control with fast transient response. The output  
voltage can be precisely regulated to as low as 0.8V, with a  
maximum tolerance of ±1.5% over temperature and line  
voltage variations. A fixed frequency oscillator reduces  
design complexity, while balancing typical application cost  
and efficiency.  
• Fast Transient Response  
- High-Bandwidth Error Amplifier  
- Full 0% to 100% Duty Cycle  
• Lossless, Programmable Over-Current Protection  
- Uses Upper MOSFET’s r  
DS(on)  
The error amplifier features a 15MHz gain-bandwidth  
product and 8V/µs slew rate which enables high converter  
bandwidth for fast transient performance. The resulting  
PWM duty cycles range from 0% to 100%.  
• Small Converter Size  
- 300kHz Fixed Frequency Oscillator  
- Internal Soft Start  
- 8 Ld SOIC or 16Ld 4x4mm QFN  
• QFN Package:  
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat  
No Leads - Package Outline  
- Near Chip Scale Package footprint, which improves  
PCB efficiency and has a thinner profile  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
Protection from over-current conditions is provided by  
monitoring the r  
of the upper MOSFET to inhibit PWM  
DS(ON)  
operation appropriately. This approach simplifies the  
implementation and improves efficiency by eliminating the  
need for a current sense resistor.  
Ordering Information  
Applications  
• Power Supplies for Microprocessors  
- PCs  
PART  
PART  
TEMP.  
PKG.  
NUMBER MARKING RANGE (°C)  
PACKAGE  
8 Ld SOIC  
DWG. #  
ISL6520CB 6520CB  
0 to 70  
0 to 70  
M8.15  
- Embedded Controllers  
ISL6520CBZ 6520CBZ  
(Note)  
8 Ld SOIC (Pb-free) M8.15  
• Subsystem Power Supplies  
- PCI/AGP/GTL+ Buses  
- ACPI Power Control  
ISL6520IB  
6520IB  
-40 to 85 8 Ld SOIC  
M8.15  
ISL6520IBZ 6520IBZ  
(Note)  
-40 to 85 8 Ld SOIC (Pb-free) M8.15  
• Cable Modems, Set Top Boxes, and DSL Modems  
• DSP and Core Communications Processor Supplies  
• Memory Supplies  
ISL6520CR ISL6520CR  
0 to 70  
16 Ld 4x4mm QFN L16.4x4  
ISL6520IR  
ISL6520IR  
-40 to 85 16 Ld 4x4mm QFN L16.4x4  
Evaluation Board  
ISL6520EVAL1  
• Personal Computer Peripherals  
* Add “-T” suffix for tape and reel.  
• Industrial Power Supplies  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free  
material sets; molding compounds/die attach materials and 100% matte  
tin plate termination finish, which are RoHS compliant and compatible  
with both SnPb and Pb-free soldering operations. Intersil Pb-free  
products are MSL classified at Pb-free peak reflow temperatures that  
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
• 5V-Input DC/DC Regulators  
• Low-Voltage Distributed Power Supplies  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2003, 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
ISL6520  
Pinouts  
SOIC  
QFN  
TOP VIEW  
TOP VIEW  
BOOT  
UGATE  
GND  
1
2
3
4
8
7
6
5
PHASE  
COMP/SD  
FB  
16 15 14 13  
GND  
BOOT  
UGATE  
GND  
1
2
3
4
12 NC  
11 COMP/OCSET  
10 NC  
LGATE  
VCC  
NC  
9
FB  
5
6
7
8
Block Diagram  
VCC  
POR AND  
SOFTSTART  
BOOT  
+
SAMPLE  
AND  
-
OC  
UGATE  
HOLD  
COMPARATOR  
PHASE  
PWM  
+
ERROR  
AMP  
COMPARATOR  
0.8V  
GATE  
CONTROL  
LOGIC  
+
-
+
-
-
PWM  
VCC  
FB  
LGATE  
COMP/OCSET  
20µA  
OSCILLATOR  
FIXED 300kHz  
GND  
Typical Application  
V
CC  
C
C
BULK  
DCPL  
C
HF  
D
BOOT  
VCC  
R
OCSET  
BOOT  
5
1
ISL6520  
C
BOOT  
UGATE  
PHASE  
COMP/OCSET  
2
8
7
L
OUT  
+V  
O
R
F
C
I
LGATE  
4
C
6
3
OUT  
C
F
GND  
FB  
R
OFFSET  
R
S
FN9009.4  
2
October 4, 2005  
ISL6520  
Absolute Maximum Ratings  
Thermal Information  
Thermal Resistance  
o
o
Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6.0V  
θ
( C/W)  
95. . N/A  
45. . 7  
θ
( C/W)  
CC  
Absolute Boot Voltage, V  
JA  
JC  
. . . . . . . . . . . . . . . . . . . . . . . +15.0V  
BOOT  
SOIC Package (Note 1) . . . . . . . . . . . . . .  
Upper Driver Supply Voltage, V  
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2  
- V  
. . . . . . . . . . . +6.0V  
BOOT  
PHASE  
QFN Package (Note 2, 3). . . . . . . . . . . . . .  
Maximum Junction Temperature  
o
o
(Plastic Package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 C  
o
Maximum Storage Temperature Range. . . . . . . . -65 C to 150 C  
Maximum Lead Temperature  
Recommended Operating Conditions  
o
(Soldering 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 C  
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V ±10%  
(SOIC - Lead Tips Only)  
o
o
o
o
Ambient Temperature Range - ISL6520C . . . . . . . . . . . 0 C to 70 C  
Ambient Temperature Range - ISL6520I . . . . . . . . . . -40 C to 85 C  
o
o
Junction Temperature Range. . . . . . . . . . . . . . . . . . -40 C to 125 C  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
1. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
2. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
3. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.  
PARAMETER  
VCC SUPPLY CURRENT  
Nominal Supply  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
UGATE and LGATE Open  
2.6  
3.2  
3.8  
mA  
VCC  
POWER-ON RESET  
Rising VCC POR Threshold  
VCC POR Threshold Hysteresis  
OSCILLATOR  
POR  
4.19  
-
4.30  
0.25  
4.5  
-
V
V
Frequency  
f
ISL6520C, V  
= 5V  
250  
230  
-
300  
300  
1.5  
340  
340  
-
kHz  
kHz  
OSC  
CC  
= 5V  
ISL6520I, V  
CC  
Ramp Amplitude  
V  
V
P-P  
OSC  
REFERENCE  
Reference Voltage Tolerance  
ISL6520C  
ISL6520I  
-1.5  
-2.5  
-
-
+1.5  
+2.5  
-
%
%
V
Nominal Reference Voltage  
ERROR AMPLIFIER  
DC Gain  
V
0.800  
REF  
Guaranteed By Design  
-
-
-
88  
15  
8
-
-
-
dB  
Gain-Bandwidth Product  
Slew Rate  
GBWP  
SR  
MHz  
V/µs  
GATE DRIVERS  
Upper Gate Source Current  
Upper Gate Sink Current  
Lower Gate Source Current  
Lower Gate Sink Current  
PROTECTION / DISABLE  
OCSET Current Source  
I
-
-
-
-
-1  
1
-
-
-
-
A
A
A
A
UGATE-SRC  
I
UGATE-SNK  
I
-1  
2
LGATE-SRC  
I
LGATE-SNK  
I
ISL6520C  
ISL6520I  
17  
14  
-
20  
20  
22  
24  
-
µA  
µA  
V
OCSET  
Disable Threshold  
V
0.8  
DISABLE  
FN9009.4  
3
October 4, 2005  
ISL6520  
An over-current trip cycles the soft-start function.  
Functional Pin Description  
During soft-start, and all the time during normal converter  
operation, this pin represents the output of the error amplifier.  
Use this pin, in combination with the FB pin, to compensate the  
voltage-control feedback loop of the converter.  
VCC  
This is the main bias supply for the ISL6520, as well as the  
lower MOSFET’s gate. Connect a well-decoupled 5V supply  
to this pin.  
Pulling OCSET to a level below 0.8V will disable the  
controller. Disabling the ISL6520 causes the oscillator to  
stop, the LGATE and UGATE outputs to be held low, and the  
softstart circuitry to re-arm.  
FB  
This pin is the inverting input of the internal error amplifier. Use  
this pin, in combination with the COMP/OCSET pin, to  
compensate the voltage-control feedback loop of the converter.  
LGATE  
GND  
Connect this pin to the lower MOSFET’s gate. This pin provides  
the PWM-controlled gate drive for the lower MOSFET. This pin  
is also monitored by the adaptive shoot-through protection  
circuitry to determine when the lower MOSFET has turned off.  
Do not insert any circuitry between this pin and the gate of the  
lower MOSFET, as it may interfere with the internal adaptive  
shoot-through protection circuitry and render it ineffective.  
This pin represents the signal and power ground for the IC.  
Tie this pin to the ground island/plane through the lowest  
impedance connection available.  
PHASE  
Connect this pin to the upper MOSFET source. This pin is  
used to monitor the voltage drop across the upper MOSFET  
for over-current protection. This pin is also monitored by the  
continuously adaptive shoot-through protection circuitry to  
determine when the upper MOSFET has turned off.  
Functional Description  
Initialization  
The ISL6520 automatically initializes upon receipt of power.  
The Power-On Reset (POR) function continually monitors the  
bias voltage at the VCC pin. The POR function initiates the  
Over-Current Protection (OCP) sampling and hold operation  
after the supply voltage exceeds its POR threshold. Upon  
completion of the OCP sampling and hold operation, the POR  
function initiates the Soft Start operation.  
UGATE  
Connect this pin to the upper MOSFET’s gate. This pin  
provides the PWM-controlled gate drive for the upper  
MOSFET. This pin is also monitored by the adaptive shoot-  
through protection circuitry to determine when the upper  
MOSFET has turned off. Do not insert any circuitry between  
this pin and the gate of the upper MOSFET, as it may  
interfere with the internal adaptive shoot-through protection  
circuitry and render it ineffective.  
Over Current Protection  
The over-current function protects the converter from a  
shorted output by using the upper MOSFET’s on-resistance,  
BOOT  
r
, to monitor the current. This method enhances the  
DS(ON)  
This pin provides ground referenced bias voltage to the  
upper MOSFET driver. A bootstrap circuit is used to create a  
voltage suitable to drive a logic-level N-channel MOSFET.  
converter’s efficiency and reduces cost by eliminating a  
current sensing resistor.  
The over-current function cycles the soft-start function in a  
hiccup mode to provide fault protection. A resistor  
OCSET  
Application diagram).  
COMP/OCSET  
This is a multiplexed pin. During a short period of time following  
power-on reset (POR), this pin is used to determine the over-  
current threshold of the converter. Connect a resistor (R  
from this pin to the drain of the upper MOSFET (V ).  
(R  
) programs the over-current trip level (see Typical  
)
OCSET  
CC  
), and the  
Immediately following POR, the ISL6520 initiates the Over-  
Current Protection sampling and hold operation. First, the  
internal error amplifier is disabled. This allows an internal  
R
, an internal 20µA current source (I  
OCSET  
OCSET  
upper MOSFET on-resistance (r  
) set the converter over-  
DS(ON)  
20µA current sink to develop a voltage across R  
. The  
OCSET  
current (OC) trip point according to the following equation:  
ISL6520 then samples this voltage at the COMP pin. This  
sampled voltage, which is referenced to the VCC pin, is held  
internally as the Over-Current Set Point.  
I
xR  
OCSET  
OCSET  
I
= -------------------------------------------------  
PEAK  
r
DS(ON)  
When the voltage across the upper MOSFET, which is also  
referenced to the VCC pin, exceeds the Over-Current Set  
Point, the over-current function initiates a soft-start sequence.  
Figure 1 shows the inductor current after a fault is introduced  
while running at 15A. The continuous fault causes the  
ISL6520 to go into a hiccup mode with a typical period of  
25ms. The inductor current increases to 18A during the Soft  
Internal circuitry of the ISL6520 will not recognize a voltage  
drop across R larger than 0.5V. Any voltage drop  
OCSET  
that is greater than 0.5V will set the  
across R  
OCSET  
overcurrent trip point to:  
0.5V  
I
= ----------------------  
PEAK  
r
DS(ON)  
FN9009.4  
4
October 4, 2005  
ISL6520  
Start interval and causes an over-current trip. The converter  
dissipates very little power with this method. The measured  
input power for the conditions of Figure 1 is only 1.5W.  
increasing width that charge the output capacitor(s). When the  
internally generated Soft Start voltage exceeds the feedback  
(FB pin) voltage, the output voltage is in regulation. This  
method provides a rapid and controlled output voltage rise. The  
entire startup sequence typically take about 11ms.  
OUTPUT INDUCTOR  
CURRENT  
5A/DIV.  
V
OUT  
500mV/DIV.  
COMP/OCSET  
1V/DIV.  
TIME (5ms/DIV.)  
FIGURE 1. OVERCURRENT OPERATION  
TIME (2ms/DIV.)  
The over-current function will trip at a peak inductor current  
PEAK)  
FIGURE 2. START UP SEQUENCE  
(I  
determined by:  
I
x R  
OCSET  
OCSET  
I
= ----------------------------------------------------  
Application Guidelines  
PEAK  
r
DS(ON)  
Layout Considerations  
where I  
is the internal OCSET current source (20µA  
OCSET  
typical). The OC trip point varies mainly due to the  
MOSFET’s r variations. To avoid over-current tripping  
As in any high frequency switching converter, layout is very  
important. Switching current from one power device to another  
can generate voltage transients across the impedances of the  
interconnecting bond wires and circuit traces. These  
interconnecting impedances should be minimized by using  
wide, short printed circuit traces. The critical components  
should be located as close together as possible, using ground  
plane construction or single point grounding.  
DS(ON)  
in the normal operating load range, find the R  
from the equation above with:  
resistor  
OCSET  
1. The maximum r  
temperature.  
2. The minimum I  
at the highest junction  
DS(ON)  
from the specification table.  
OCSET  
(∆I)  
I
> I  
+ ----------  
3. Determine I  
for  
,
PEAK  
PEAK  
OUT(MAX)  
V
IN  
2
where I is the output inductor ripple current.  
ISL6520  
For an equation for the ripple current see the section under  
component guidelines titled ‘Output Inductor Selection’.  
UGATE  
PHASE  
Q
Q
1
L
O
V
OUT  
Soft Start  
The POR function initiates the soft start sequence after the  
overcurrent set point has been sampled. Soft start clamps the  
error amplifier output (COMP pin) and reference input (non-  
inverting terminal of the error amp) to the internally generated  
Soft Start voltage. Figure 2 shows a typical start up interval  
where the COMP/OCSET pin has been released from a  
grounded (system shutdown) state. Initially, the COMP/OCSET  
is used to sample the oversurrent setpoint by disabling the error  
C
IN  
2
LGATE  
C
O
RETURN  
FIGURE 3. PRINTED CIRCUIT BOARD POWER AND  
GROUND PLANES OR ISLANDS  
amplifier and drawing 20µA through R  
. Once the over-  
OCSET  
Figure 3 shows the critical power components of the converter.  
To minimize the voltage overshoot, the interconnecting wires  
indicated by heavy lines should be part of a ground or power  
plane in a printed circuit board. The components shown in  
Figure 3 should be located as close together as possible.  
current level has been sampled, the soft start function is  
initiated. The clamp on the error amplifier (COMP/OCSET pin)  
initially controls the converter’s output voltage during soft start.  
The oscillator’s triangular waveform is compared to the ramping  
error amplifier voltage. This generates PHASE pulses of  
FN9009.4  
5
October 4, 2005  
ISL6520  
ST  
Please note that the capacitors C and C may each  
IN  
2. Place 1 Zero Below Filter’s Double Pole (~75% F ).  
LC  
O
ND  
represent numerous physical capacitors. Locate the ISL6520  
within 3 inches of the MOSFETs, Q and Q . The circuit traces  
3. Place 2  
Zero at Filter’s Double Pole.  
ST  
1
2
4. Place 1 Pole at the ESR Zero.  
for the MOSFETs’ gate and source connections from the  
ISL6520 must be sized to handle up to 1A peak current.  
ND  
5. Place 2  
Pole at Half the Switching Frequency.  
6. Check Gain against Error Amplifier’s Open-Loop Gain.  
7. Estimate Phase Margin - Repeat if Necessary.  
Figure 4 shows the circuit traces that require additional layout  
consideration. Use single point and ground plane construction  
for the circuits shown. Minimize any leakage current paths on  
the COMP/OCSET pin and locate the resistor, R  
close  
V
IN  
DRIVER  
DRIVER  
OSCET  
OSC  
to the COMP/OCSET pin because the internal current source is  
only 20µA. Provide local V decoupling between VCC and  
PWM  
L
O
COMPARATOR  
V
OUT  
CC  
GND pins. Locate the capacitor, C  
the BOOT and PHASE pins. All components used for feedback  
compensation should be located as close to the IC a practical.  
as close as practical to  
-
PHASE  
BOOT  
+
V  
C
O
OSC  
ESR  
(PARASITIC)  
Z
FB  
+V  
IN  
BOOT  
V
E/A  
D
1
Z
Q
1
-
IN  
+5V  
L
O
C
+
BOOT  
V
OUT  
REFERENCE  
ERROR  
AMP  
PHASE  
VCC  
ISL6520  
C
O
+5V  
DETAILED COMPENSATION COMPONENTS  
Q
2
COMP/OCSET  
GND  
Z
FB  
V
OUT  
C
2
C
VCC  
Z
IN  
C
C
R
R
3
1
3
2
R
1
COMP  
FIGURE 4. PRINTED CIRCUIT BOARD SMALL SIGNAL  
LAYOUT GUIDELINES  
FB  
-
+
ISL6520  
Feedback Compensation  
REFERENCE  
Figure 5 highlights the voltage-mode control loop for a  
synchronous-rectified buck converter. The output voltage  
FIGURE 5. VOLTAGE-MODE BUCK CONVERTER  
COMPENSATION DESIGN  
(V  
) is regulated to the Reference voltage level. The  
OUT  
error amplifier (Error Amp) output (V ) is compared with  
E/A  
the oscillator (OSC) triangular wave to provide a pulse-  
The modulator transfer function is the small-signal transfer  
function of V /V . This function is dominated by a DC  
width modulated (PWM) wave with an amplitude of V at  
IN  
OUT E/A  
Gain and the output filter (L and C ), with a double pole  
the PHASE node. The PWM wave is smoothed by the output  
O
O
filter (L and C ).  
break frequency at F and a zero at F . The DC Gain of  
LC ESR  
O
O
the modulator is simply the input voltage (V ) divided by the  
IN  
Modulator Break Frequency Equations  
peak-to-peak oscillator voltage V  
OSC  
.
1
1
F
= ------------------------------------------  
F
= -------------------------------------------  
Compensation Break Frequency Equations  
LC  
ESR  
2π x ESR x C  
2π x  
L
x C  
O
O
O
1
2
1
F
= -----------------------------------  
F
= --------------------------------------------------------  
Z1  
Z2  
P1  
P2  
2π x R x C  
C
x C  
2
1
The compensation network consists of the error amplifier  
(internal to the ISL6520) and the impedance networks Z  
and Z . The goal of the compensation network is to provide  
FB  
a closed loop transfer function with the highest 0dB crossing  
1
---------------------  
C + C  
2π x R  
x
2
IN  
1
2
1
1
3
F
= ------------------------------------------------------  
F
= -----------------------------------  
2π x (R + R ) x C  
2π x R x C  
3
1
3
3
frequency (f  
) and adequate phase margin. Phase margin  
0dB  
is the difference between the closed loop phase at f  
and  
0dB  
180 degrees. The equations below relate the compensation  
network’s poles, zeros and gain to the components (R , R ,  
Figure 6 shows an asymptotic plot of the DC/DC converter’s  
gain vs frequency. The actual Modulator Gain has a high gain  
peak due to the high Q factor of the output filter and is not  
shown in Figure 6. Using the above guidelines should give a  
Compensation Gain similar to the curve plotted. The open  
loop error amplifier gain bounds the compensation gain.  
1
2
R , C , C , and C ) in Figure 7. Use these guidelines for  
locating the poles and zeros of the compensation network:  
3
1
2
3
1. Pick Gain (R /R ) for desired converter bandwidth.  
2
1
FN9009.4  
6
October 4, 2005  
ISL6520  
Check the compensation gain at F with the capabilities of  
P2  
Use only specialized low-ESR capacitors intended for  
the error amplifier. The Closed Loop Gain is constructed on  
the graph of Figure 6 by adding the Modulator Gain (in dB) to  
the Compensation Gain (in dB). This is equivalent to  
multiplying the modulator transfer function to the  
switching-regulator applications for the bulk capacitors. The  
bulk capacitor’s ESR will determine the output ripple voltage  
and the initial voltage drop after a high slew-rate transient.  
An aluminum electrolytic capacitor’s ESR value is related to  
the case size with lower ESR available in larger case sizes.  
However, the Equivalent Series Inductance (ESL) of these  
capacitors increases with case size and can reduce the  
usefulness of the capacitor to high slew-rate transient  
loading. Unfortunately, ESL is not a specified parameter.  
Work with your capacitor supplier and measure the  
capacitor’s impedance with frequency to select a suitable  
component. In most cases, multiple electrolytic capacitors of  
small case size perform better than a single large case  
capacitor.  
compensation transfer function and plotting the gain.  
The compensation gain uses external impedance networks  
Z
and Z to provide a stable, high bandwidth (BW) overall  
FB  
IN  
loop. A stable control loop has a gain crossing with  
-20dB/decade slope and a phase margin greater than 45  
degrees. Include worst case component variations when  
determining phase margin.  
100  
F
F
P1  
F
F
Z2  
Z1  
P2  
80  
60  
40  
20  
0
Output Inductor Selection  
OPEN LOOP  
The output inductor is selected to meet the output voltage  
ripple requirements and minimize the converter’s response  
time to the load transient. The inductor value determines the  
converter’s ripple current and the ripple voltage is a function  
of the ripple current. The ripple voltage and current are  
approximated by the following equations:  
ERROR AMP GAIN  
20LOG  
(R /R )  
2
1
20LOG  
(V /DV  
)
OSC  
IN  
MODULATOR  
GAIN  
COMPENSATION  
GAIN  
-20  
-40  
-60  
V
- V  
Fs x L  
V
OUT  
IN  
OUT  
CLOSED LOOP  
V  
= I x ESR  
I =  
x
OUT  
GAIN  
V
IN  
F
LC  
F
ESR  
100K  
FREQUENCY (Hz)  
10  
100  
1K  
10K  
1M  
10M  
Increasing the value of inductance reduces the ripple current  
and voltage. However, the large inductance values reduce  
the converter’s response time to a load transient.  
FIGURE 6. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN  
One of the parameters limiting the converter’s response to  
a load transient is the time required to change the inductor  
current. Given a sufficiently fast control loop design, the  
ISL6520 will provide either 0% or 100% duty cycle in  
response to a load transient. The response time is the time  
required to slew the inductor current from an initial current  
value to the transient current level. During this interval the  
difference between the inductor current and the transient  
current level must be supplied by the output capacitor.  
Minimizing the response time can minimize the output  
capacitance required.  
Component Selection Guidelines  
Output Capacitor Selection  
An output capacitor is required to filter the output and supply  
the load transient current. The filtering requirements are a  
function of the switching frequency and the ripple current.  
The load transient requirements are a function of the slew  
rate (di/dt) and the magnitude of the transient load current.  
These requirements are generally met with a mix of  
capacitors and careful layout.  
Modern components and loads are capable of producing  
transient load rates above 1A/ns. High frequency capacitors  
initially supply the transient and slow the current load rate  
seen by the bulk capacitors. The bulk filter capacitor values  
are generally determined by the ESR (Effective Series  
Resistance) and voltage rating requirements rather than  
actual capacitance requirements.  
The response time to a transient is different for the  
application of load and the removal of load. The following  
equations give the approximate response time interval for  
application and removal of a transient load:  
L x I  
L x I  
V
TRAN  
OUT  
TRAN  
t
=
t
=
FALL  
RISE  
V
- V  
IN  
OUT  
High frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements.  
where: I  
is the transient load current step, t  
is the  
is the  
TRAN  
RISE  
response time to the application of load, and t  
FALL  
response time to the removal of load. The worst case  
response time can be either at the application or removal of  
load. Be sure to check both of these equations at the  
FN9009.4  
7
October 4, 2005  
ISL6520  
minimum and maximum output levels for the worst case  
response time.  
to package thermal-resistance specifications. A separate  
heatsink may be necessary depending upon MOSFET  
power, package type, ambient temperature and air flow.  
Input Capacitor Selection  
1
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use small ceramic  
capacitors for high frequency decoupling and bulk  
2
Io x V x t  
IN SW  
x F  
S
P
P
= Io x r  
x D +  
UPPER  
DS(ON)  
2
2
= Io x r  
x (1 - D)  
LOWER  
DS(ON)  
capacitors to supply the current needed each time Q turns  
1
Where: D is the duty cycle = V  
/ V ,  
IN  
OUT  
on. Place the small ceramic capacitors physically close to  
t
is the switching interval, and  
is the switching frequency.  
SW  
the MOSFETs and between the drain of Q and the source  
1
F
S
of Q .  
2
The important parameters for the bulk input capacitor are the  
voltage rating and the RMS current rating. For reliable  
operation, select the bulk capacitor with voltage and current  
ratings above the maximum input voltage and largest RMS  
current required by the circuit. The capacitor voltage rating  
should be at least 1.25 times greater than the maximum  
input voltage and a voltage rating of 1.5 times is a  
conservative guideline. The RMS current rating requirement  
for the input capacitor of a buck regulator is approximately  
1/2 the DC load current.  
Given the reduced available gate bias voltage (5V),  
logic-level or sub-logic-level transistors should be used for  
both N-MOSFETs. Caution should be exercised with  
devices exhibiting very low V  
characteristics. The  
GS(ON)  
shoot-through protection present aboard the ISL6520 may  
be circumvented by these MOSFETs if they have large  
parasitic impedences and/or capacitances that would  
inhibit the gate of the MOSFET from being discharged  
below its threshold level before the complementary  
MOSFET is turned on.  
For a through hole design, several electrolytic capacitors  
may be needed. For surface mount designs, solid tantalum  
capacitors can be used, but caution must be exercised with  
regard to the capacitor surge current rating. These  
capacitors must be capable of handling the surge-current at  
power-up. Some capacitor series available from reputable  
manufacturers are surge current tested.  
+5V  
D
BOOT  
+5V  
+ V  
-
D
VCC  
BOOT  
C
ISL6520  
BOOT  
Q1  
UGATE  
PHASE  
MOSFET Selection/Considerations  
The ISL6520 requires two N-Channel power MOSFETs.  
NOTE:  
V -V  
D
V
G-S  
CC  
These should be selected based upon r  
supply requirements, and thermal management  
requirements.  
, gate  
DS(ON)  
Q2  
LGATE  
-
+
NOTE:  
G-S  
In high-current applications, the MOSFET power  
V
V  
CC  
dissipation, package selection and heatsink are the  
dominant design factors. The power dissipation includes  
two loss components; conduction loss and switching loss.  
The conduction losses are the largest component of power  
dissipation for both the upper and the lower MOSFETs.  
These losses are distributed between the two MOSFETs  
according to duty factor (see the equations below). Only  
the upper MOSFET has switching losses, since the lower  
MOSFETs body diode or an external Schottky rectifier  
across the lower MOSFET clamps the switching node  
before the synchronous rectifier turns on. These equations  
assume linear voltage-current transitions and do not  
adequately model power loss due the reverse-recovery of  
the lower MOSFET’s body diode. The gate-charge losses  
are dissipated by the ISL6520 and don't heat the  
GND  
FIGURE 7. UPPER GATE DRIVE BOOTSTRAP  
Figure 7 shows the upper gate drive (BOOT pin) supplied  
by a bootstrap circuit from V . The boot capacitor,  
CC  
C
, develops a floating supply voltage referenced to  
BOOT  
the PHASE pin. The supply is refreshed to a voltage of V  
CC  
less the boot diode drop (V ) each time the lower  
D
MOSFET, Q , turns on.  
2
MOSFETs. However, large gate-charge increases the  
switching interval, t  
which increases the upper MOSFET  
SW  
switching losses. Ensure that both MOSFETs are within  
their maximum junction temperature at high ambient  
temperature by calculating the temperature rise according  
FN9009.4  
8
October 4, 2005  
ISL6520  
ISL6520 DC/DC Converter Application Circuit  
Figure 8 shows an application circuit of a DC/DC Converter.  
Detailed information on the circuit, including a complete Bill-  
of-Materials and circuit board description, can be found in  
Application Note AN9932.  
+5V  
+
0.1µF  
C
2 x 1µF  
IN  
2 x 330µF  
VCC  
5
ISL6520  
D
1
6.19kΩ  
MONITOR  
AND  
PROTECTION  
1
BOOT  
UGATE  
PHASE  
2
8
COMP/OCSET  
7
0.1µF  
Q
1
REF  
L
1
10.0kΩ  
+
470pF  
FB  
-
V
OUT  
4
8200pF  
LGATE  
+
-
+
6
Q
C
2
OUT  
3 x 330µF  
0.1µF  
OSC  
3
GND  
1.00kΩ  
U
1
3.16kΩ  
60.4Ω  
18000pF  
Component Selection Notes:  
C
C
- Each 330mF 6.3WVDC, Sanyo 6TPB330M or Equivalent.  
L - 3.1µH Inductor, Panasonic P/N ETQ-P6F2ROLFA or Equivalent.  
1
Q , Q - Intersil MOSFET; HUF76143.  
1 2  
IN  
- Each 330mF 6.3WVDC, Sanyo 6TPB330M or Equivalent.  
OUT  
D1 - 30mA Schottky Diode, MA732 or Equivalent  
FIGURE 8. 5V to 3.3V 15A DC/DC CONVERTER  
FN9009.4  
9
October 4, 2005  
ISL6520  
Small Outline Plastic Packages (SOIC)  
M8.15 (JEDEC MS-012-AA ISSUE C)  
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE  
N
INDEX  
0.25(0.010)  
M
B M  
H
AREA  
INCHES MILLIMETERS  
E
SYMBOL  
MIN  
MAX  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
NOTES  
-B-  
A
A1  
B
C
D
E
e
0.0532  
0.0040  
0.013  
0.0688  
0.0098  
0.020  
-
-
1
2
3
L
9
SEATING PLANE  
A
0.0075  
0.1890  
0.1497  
0.0098  
0.1968  
0.1574  
-
-A-  
3
h x 45°  
D
4
-C-  
0.050 BSC  
1.27 BSC  
-
α
H
h
0.2284  
0.0099  
0.016  
0.2440  
0.0196  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
e
A1  
C
5
B
0.10(0.004)  
L
6
0.25(0.010) M  
C
A M B S  
N
α
8
8
7
NOTES:  
0°  
8°  
0°  
8°  
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Rev. 1 6/05  
Publication Number 95.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. Inter-  
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per  
side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater  
above the seating plane, shall not exceed a maximum value of  
0.61mm (0.024 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions  
are not necessarily exact.  
FN9009.4  
10  
October 4, 2005  
ISL6520  
Quad Flat No-Lead Plas tic Package (QFN)  
Micro Lead Frame Plas tic Package (MLFP)  
L16.4x4  
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
(COMPLIANT TO JEDEC MO-220-VGGC ISSUE C)  
MILLIMETERS  
SYMBOL  
MIN  
0.80  
NOMINAL  
MAX  
1.00  
0.05  
1.00  
NOTES  
A
A1  
A2  
A3  
b
0.90  
-
-
-
-
-
-
9
0.20 REF  
9
0.23  
1.95  
1.95  
0.28  
0.35  
2.25  
2.25  
5, 8  
D
4.00 BSC  
-
D1  
D2  
E
3.75 BSC  
9
2.10  
7, 8  
4.00 BSC  
-
E1  
E2  
e
3.75 BSC  
9
2.10  
7, 8  
0.65 BSC  
-
k
0.25  
0.50  
-
-
-
-
L
0.60  
0.75  
0.15  
8
L1  
N
-
16  
4
4
-
10  
2
Nd  
Ne  
P
3
3
-
-
0.60  
12  
9
θ
-
9
Rev. 5 5/04  
NOTES:  
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.  
2. N is the number of terminals.  
3. Nd and Ne refer to the number of terminals on each D and E.  
4. All dimensions are in millimeters. Angles are in degrees.  
5. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
6. The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
7. Dimensions D2 and E2 are for the exposed pads which provide  
improved electrical and thermal performance.  
8. Nominal dimensionsare provided toassistwith PCBLandPattern  
Design efforts, see Intersil Technical Brief TB389.  
9. Features and dimensions A2, A3, D1, E1, P & θ are present when  
Anvil singulation method is used and not present for saw  
singulation.  
10. Depending on the method of lead termination at the edge of the  
package, a maximum 0.15mm pull back (L1) maybe present. L  
minus L1 to be equal to or greater than 0.3mm.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN9009.4  
11  
October 4, 2005  

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