RFM12N08 [INTERSIL]
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs; 12A ， 80V和100V ， 0.200 Ohm的N通道功率MOSFET
| 型号： | RFM12N08 |
| 厂家： | 
Intersil |
| 描述： | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Semiconductor
Data Sheet
October 1998
File Number 1386.2
12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs
Features
• 12A, 80V and 100V
• r = 0.200Ω
[ /Title
(RFM12
N08,
RFM12
N10,
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
RFP12
N08,
Symbol
RFP12
N10)
D
Formerly developmental type TA09594.
/Sub-
ject
Ordering Information
G
PART NUMBER
RFM12N08
PACKAGE
TO-204AA
BRAND
RFM12N08
(12A,
80V and
100V,
0.2
Ohm,
N-Chan-
nel
S
RFM12N10
TO-204AA
TO-220AB
TO-220AB
RFM12N10
RFP12N08
RFP12N10
RFP12N08
RFP12N10
NOTE: When ordering, use the entire part number.
Power
MOS-
FETs) Packaging
/Author
()
/Key-
JEDEC TO-204AA
JEDEC TO-220AB
SOURCE
DRAIN
(FLANGE)
DRAIN
DRAIN
GATE
(TAB)
words
(Harris
Semi-
conduc-
tor, N-
Chan-
SOURCE (PIN 2)
GATE (PIN 1)
nel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Cre-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1
RFM12N08, RFM12N10, RFP12N08, RFP12N10
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
RFM12N08
80
RFM12N10
100
RFP12N08
RFP12N10
100
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V
80
80
V
V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . V
80
100
100
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
30
12
30
12
30
12
30
A
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
0.6
75
0.6
60
0.48
60
0.48
W
W/ C
D
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
T
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
J, STG
o
300
260
300
260
300
260
300
260
C
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
I = 250µA, V = 0V
D
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
DSS
GS
80
-
-
V
RFM12N10, EFP12N10
Gate Threshold Voltage
100
-
-
V
V
V
V
V
V
V
= V , I = 250µA (Figure 8)
DS
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
GS(TH)
GS
DS
DS
GS
D
Zero Gate Voltage Drain Current
I
= Rated BV
V = 0V
DSS, GS
-
1
µA
µA
nA
Ω
DSS
o
= 0.8 x Rated BV
T
= 125 C
C
-
25
DSS,
Gate to Source Leakage Current
I
= ±20V, V
= 0V
-
±100
0.200
2.4
GSS
DS
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
r
I
I
= 12A, V
= 10V (Figures 6, 7)
= 10V
-
DS(ON)
D
GS
GS
V
= 12A, V
D
-
45
250
85
100
-
V
DS(ON)
t
V
V
= 50V, I = 6A, R = 50Ω,
70
ns
ns
ns
ns
pF
pF
pF
d(ON)
DD
D
G
= 10V, R = 8Ω,
GS
(Figures 10, 11, 12)
L
Rise Time
t
375
130
150
850
300
150
1.67
2.083
r
Turn-Off Delay Time
t
d(OFF)
Fall Time
t
f
Input Capacitance
C
V
= 25V, V = 0V, f = 1MHz
GS
ISS
DS
(Figure 9)
Output Capacitance
C
C
-
OSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
-
RSS
o
R
RFM12N08, RFM12N10
RFP12N08, RFP12N10
-
C/W
θJC
o
-
C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage (Note 2)
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX
1.4
-
UNITS
V
V
I
I
= 6A
-
-
SD
SD
t
= 4A, dI /dt = 100A/µs
SD
150
ns
rr
SD
NOTE:
2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
14
12
10
8
RFM12N08, RFM12N10
RFP12N08, RFP12N10
6
4
2
0
0
50
100
o
150
25
50
75
100
125
150
o
T , CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
o
16
V
= 20V
V
= 10V
T
= 25 C
GS
GS
C
V
= 9V
GS
I
(MAX)
D
PULSE DURATION = 80µs
12
8
CONTINUOUS
DUTY CYCLE ≤ 2%
o
T
= 25 C
C
10
V
= 8V
= 7V
GS
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
V
GS
1
V
(MAX) 80V
DSS
RFM12N08, RFP12N08
(MAX) 100V
4
V
= 6V
= 5V
GS
V
DSS
RFM12N10, RFP12N10
V
GS
0
0
0
2
4
6
8
10
1
10
100
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
0.8
16
12
8
V
= 10V
GS
V
= 10V
DS
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
o
T
= 25 C
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
C
0.6
0.4
0.2
0
o
T
= 125 C
C
o
T
= -40 C
C
o
T
= 125 C
C
o
= 125 C
T
o
C
T
= 25 C
C
4
o
T
= 25 C
o
C
T
= -40 C
C
o
T
= -40 C
C
0
0
4
8
12
16
20
2
4
V
6
8
10
12
I , DRAIN CURRENT (A)
D
, GATE TO SOURCE VOLTAGE (V)
GS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
3
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
1.5
1.0
1.4
1.2
1
V
= 10V
V
= V
DS
GS
= 12A
GS
= 250µA
I
D
I
D
PULSE DURATION = 80µs
0.8
0.6
0.5
0
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
100
75
50
25
0
10
8
1200
R
= 8.33Ω
= 0.56mA
L
V
= 0V, f = 1MHz
GS
I
G(REF)
C
C
C
= C
+ C
ISS
GS
= C
GD
V
= 10V
1000
800
600
400
200
0
GATE
SOURCE
VOLTAGE
GS
RSS
OSS
GD
≈ C
V
= BV
V
= BV
DSS
DD
DSS
DD
+ C
DS
GS
6
C
0.75 BV
ISS
DSS
4
0.50 BV
0.25 BV
DSS
DSS
2
0
C
OSS
RSS
DRAIN SOURCE VOLTAGE
C
I
I
I
0
10
20
30
40
50
60
70
G(REF)
G(ACT)
G(REF)
20
80
t, TIME (µs)
I
G(ACT)
V
, DRAIN TO SOURCE (V)
DS
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
4
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
R
DS
L
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FIGURE 11. SWITCHING TIME TEST CIRCUIT
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
g(TOT)
SAME TYPE
AS DUT
V
GS
12V
BATTERY
Q
gd
0.2µF
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
G(REF)
0
I
V
G(REF)
DS
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 13. GATE CHARGE TEST CIRCUIT
5
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