RFM4N35 [INTERSIL]
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs; 4A ， 350V和400V ， 2.000 Ohm的N通道功率MOSFET
| 型号： | RFM4N35 |
| 厂家： | 
Intersil |
| 描述： | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
October 1998
File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
Features
• 4A, 350V and 400V
• r = 2.000Ω
[ /Title
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
DS(ON)
• Related Literature
(RFM4N
35,
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
RFM4N relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
40,
These types can be operated directly from integrated
circuits.
RFP4N3
Symbol
5,
D
RFP4N4
Formerly developmental type TA17404.
0)
Ordering Information
/Subject
G
PART NUMBER
PACKAGE
BRAND
RFM4N35
(4A,
RFM4N35
TO-204AA
350V
S
RFM4N40
TO-204AA
TO-220AB
TO-220AB
RFM4N40
RFP4N35
RFP4N40
and
RFP4N35
400V,
RFP4N40
2.000
NOTE: When ordering, use the entire part number.
Ohm, N-
Channel
Power
Packaging
MOS-
JEDEC TO-204AA
JEDEC TO-220AB
FETs)
SOURCE
DRAIN
GATE
/Author
DRAIN
(FLANGE)
()
DRAIN
(FLANGE)
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
SOURCE (PIN 2)
GATE (PIN 1)
204AA,
TO-
220AB)
/Creator
()
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1
RFM4N35, RFM4N40, RFP4N35, RFP4N40
o
Absolute Maximum Ratings
T
= 25 C Unless Otherwise Specified
C
RFM4N35
RFM4N40
RFP4N35
RFP4N40
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . .V
350
400
350
400
V
V
DS
Drain to Gate Voltage (R
GS
= 1MΩ) (Note 1) . . . . . . . . . . . . . . . V
350
400
350
400
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
4
4
4
8
4
8
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
8
±20
8
±20
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
75
60
60
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
0.48
-55 to 150
0.48
-55 to 150
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . .T , T
J
-55 to 150
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . .T
o
300
260
300
260
300
260
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
I = 250µA, V = 0
D
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM4N40, RFP4N40
DSS
GS
400
-
-
-
V
V
RFM4N35, RFP4N35
Gate Threshold Voltage
350
-
V
V
V
V
V
= V , I = 250µA (Figure 8)
DS
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
V
GS(TH)
GS
DS
DS
GS
D
Zero-Gate Voltage Drain Current
I
= Rated BV
-
1
µA
µA
nA
Ω
DSS
DSS
o
= 0.8 x Rated BV
, T = 125 C
-
25
DSS
C
Gate to Source Leakage Current
I
= ±20V, V
DS
= 0
-
±100
2.000
8
GSS
Drain to Source On Resistance (Note 2)
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
r
I
I
= 4A, V
= 10V (Figures 6, 7)
= 10V
-
-
DS(ON)
D
GS
GS
V
= 4A, V
V
DS(ON)
D
V
t
= 200V, I = 2A, R = 50Ω
12
42
130
62
-
45
ns
ns
ns
ns
pF
pF
pF
D(ON)
DD
= 100Ω, V
D
G
R
= 10V
L
GS
Rise Time
t
60
r
(Figures 10, 11, 12)
Turn-Off Delay Time
t
200
100
750
150
100
1.67
2.083
D(OFF)
Fall Time
t
f
Input Capacitance
C
V
V
= 25V,
= 0V
ISS
DS
GS
Output Capacitance
C
C
-
OSS
f = 1MHz (Figure 9)
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
-
RSS
o
R
RFM4N35, RFM4N40
RFP4N35, RFP4N40
-
C/W
JC
θ
o
-
C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recorvery Time
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX
1.4
-
UNITS
V
V
I
I
= 2A
-
-
SD
SD
SD
t
= 4A, dI /dt = 100A/µs
SD
800
ns
rr
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
5
4
3
2
1
RFM4N35, RFM4N40
RFP4N35, RFP4N40
0
25
0
50
100
o
150
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
O
o
T
T
= 25 C
TC = 25 C
C
J
80µs PULSE TEST
DUTY CYCLE ≤ 2%
= MAX RATED
7
V
= 8 - 10V
GS
6
5
4
3
2
1
V
= 7V
V
V
= 20 V
GS
GS
RFM4N35, 40
RFP4N35, 40
= 6V
GS
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
= 5V
= 4V
GS
RFM4N35, RFP4N35
RFM4N40, RFP4N40
V
GS
0.1
1
10
100
1000
0
5
V
10
15
20
25
V
, DRAIN TO SOURCE VOLTAGE
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
8
7
4
V
= 20V
V
= 10V
DS
GS
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
o
T
= 125 C
C
3
2
1
0
6
5
4
3
2
o
T
= 25 C
C
o
T
= -40 C
C
o
o
T
= -40 C
T
= 125 C
C
C
1
0
2
3
4
I , DRAIN CURRENT (A)
D
5
6
7
9
10
0
1
8
0
2
4
6
8
10
V
, GATE TO SOURCE VOLTAGE (V)
GS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves (Continued)
2
1.5
1
1.5
I
V
= 4A
V
= 10V
D
DS
= 10V
GS
I
= 250µA
D
1
0.5
0
0.5
0
-50
0
50
100
150
200
-50
0
50
125
150
175
o
0
T , JUNCTION TEMPERATURE ( C)
J
T , JUNCTION TEMPERATURE ( C)
J
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
10
500
800
V
= 0V, f = 1MHz
GS
C
C
C
= C
+ C
700
600
500
400
300
200
100
0
ISS
GS
GD
GATE
TO
SOURCE
V
= BV
DSS
8
6
DD
= C
GD
≈ C
RSS
OSS
375
250
125
V
= BV
DSS
DD
+ C
DS
GS
VOLTAGE
R =100Ω
L
I
= 0.45mA
C
G(REF)
ISS
V
= 10V
GS
4
0.75 BV
0.50 BV
0.25 BV
DSS
DSS
DSS
2
0
DRAIN SOURCE VOLTAGE
C
OSS
C
RSS
10
0
I
I
G(REF)
G(REF)
t, TIME (µs)
80
20
0
20
30
40
50
I
I
G(ACT)
G(ACT)
V
, DRAIN TO SOURCE (V)
DS
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
R
L
DS
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4
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