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2N6849EB [INFINEON]

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,;
2N6849EB
型号： 2N6849EB
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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文件： 总11页 (文件大小：325K)
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