IPS5451S [INFINEON]
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH; 充分保护高侧功率MOSFET开关
| 型号： | IPS5451S |
| 厂家： | 
Infineon |
| 描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 文件： | 总12页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No.PD60159-J
IPS5451/IPS5451S
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
Product Summary
• Over temperature protection (with auto-restart)
• Over current shutdown
• Active clamp
• E.S.D protection
• Status feedback
• Open load detection
• Logic ground isolated from power ground
R
V
25mΩ (max)
ds(on)
50V
35A
1A
clamp
I
I
shutdown
open load
Description
The IPS5451/IPS5451S are fully protected five terminal
high side switch with built in short circuit, over-tempera-
ture, ESD protection, inductive load capability and
diagnosticfeedback.Theover-currentprotectionlatches
off the device if the output current exceeds Ishutdown.
It can be reset by turning the input pin low. The over-
temperature protection turns off the high side switches
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7oC
below Tshutdown. A diagnostic pin is provided for status
feedback of over-current, over-temperature and open
load detection. The double level shifter circuitry allows
large offsets between the logic ground and the load
ground.
Truth Table
In
H
L
Op. Conditions
Normal
Out
H
Dg
H
L
Normal
H
H
L
Open load
H
L
Open load
X
H
H
L
Over current
Over current
Over-temperature
Over-temperature
L
L (latched)
L
L (cycling)
L
H
L (cycling)
H
H
L
Typical Connection
Packages
+ VCC
+ 5v
15K
Status
feedback
Vcc
Dg
control
Logic
Rdg
Rin
Out
5 Lead
SMD220
IPS5451S
Gnd
In
Load
Logic
signal
Logic Gnd
Load Gnd
5 Lead
TO220 - IPS5451
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1
IPS5451/IPS5451S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T
= 25oC unless otherwise specified).
Ambient
Symbol Parameter
Min.
Max.
Units
Test Conditions
V
V
V
Maximum output voltage
V
-45
V
+0.3
cc
cc
cc
cc
out
V
Maximum logic ground to load ground offset
Maximum Input voltage
V
-45
V
+0.3
offset
in
-0.3
-5
5.5
I
Maximum IN current
10
5.5
10
mA
V
in, max
V
dg
Maximum diagnostic output voltage
Maximum diagnostic output current
-0.3
-1
I
mA
dg, max
sd cont.
(1)
I
Diode max. continuous current
(rth=62oC/W) IPS5451
(rth=80oC/W) IPS5451S
—
—
—
—
—
2.8
2.2
45
4
A
(1)
I
Diode max. pulsed current
sd pulsed
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
C=100pF, R=1500Ω,
kV
W
0.5
C=200pF, R=0Ω, L=10µH
(1)
P
d
Maximum power dissipation
(rth=62oC/W) IPS5451
(rth=80oC/W) IPS5451S
—
—
2
1.56
+150
300
45
T
T
max. Max. storage & operating junction temp.
-40
—
j
oC
V
Lead temperature (soldering 10 seconds)
lead
Vcc max. Maximum Vcc voltage
—
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
2
junction to case
R
R
1
2
Thermal resistance
—
—
th
th
TO-220
55
Thermal resistance junction to ambient
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
th
th
th
oC/W
R
R
R
1
2
3
—
—
—
60
35
5
2
D PAK (SMD220)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS5451/IPS5451S
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
V
V
V
Continuous V voltage
High level input voltage
18
5.5
0.9
5.5
4
cc
IH
cc
V
A
Low level input voltage
-0.3
IL 1
out
I
Continuous output current
TAmbient = 85 C, Tj = 125 C, R = 62oC/W) IPS5451
—
—
4
o
o
(
(
th
TAmbient = 85 C, Tj = 125 C, R = 80oC/W) IPS5451S
o
o
3.5
th
I
Continuous output current
out
Tc=85oC
(
o
o
TCase = 85 C, IN = 5V, Tj = 125 C, R = 5oC/W)
—
4
14
6
th
R
R
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
in
k
Ω
10
20
dg
Static Electrical Characteristics
(T = 25oC, V = 14V unless otherwise specified.)
j
cc
Symbol Parameter
Min. Typ. Max. Units Test Conditions
ON state resistance T = 25oC
—
19
22
32
25
30
—
R
ds(on)
V
in
= 5V, I
= 14A
j
out
o
@Tj=25 C
R
ON state resistance @ V = 6V
cc
—
ds(on)
V
V
= 5V, I
= 5V, I
= 7A
in
out
mΩ
(V =6V)
cc
ON state resistance Tj = 150oC
—
= 14A
out
R
ds(on)
in
o
@Tj=150 C
V
35
—
Functional operating range
5.5
—
cc oper.
V clamp 1 V
I
I
to OUT clamp voltage 1
to OUT clamp voltage 2
= 10mA (see Fig.1 & 2)
cc
cc
45
—
—
—
49
50
0.9
10
d
d
V
= I
(see Fig.1 & 2)
shutdown
V
V clamp 2
60
1.2
50
I
V
in
V
f
Body diode forward voltage
Output leakage current
= 14A,
= 0V
d
I
= 0V, Tj = 25oC
V
out
out
leakage
V
V
V
I
V
out
I
Supply current when OFF
Supply current when ON
—
—
—
—
—
3.5
3.5
50
10
—
= 0V,
= 0V
in
in
in
cc off
µA
I
= 5V
= 5V
cc on
I
Ripple current when ON (AC RMS)
Low level diagnostic output voltage
Diagnostic output leakage current
cc ac
dgl
20
0.1
V
0.4
10
V
µA
= 1.6 mA
dg
V
dg
Idg
1.5
= 4.5V
leakage
V
1
IN high threshold voltage
IN low threshold voltage
On state IN positive current
2.7
2.0
30
3.4
ih
V
V
il
,
µA
I
—
—
3.0
0.2
80
5.5
—
V
in
= 4V
in on
V
V
4.7
4.4
0.6
ccuv+
ccuv-
cc UVLO positive going threshold
V
V
V
cc UVLO negative going threshold
In
.
Input hysteresis
1.5
hyst
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IPS5451/IPS5451S
Switching Electrical Characteristics
V
= 14V, Resistive Load = 1Ω, T = 25oC, (unless otherwise specified).
j
cc
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Td
Turn-on delay time
5
—
—
20
20
on
T
r1
Rise time to V = V - 5V
4
out cc
µs
See figure 3
T
r2
Rise time from the end of Tr1
to V
= 90% of V
65
3
3
—
—
—
—
—
—
—
150
6
—
out
Turn ON d
cc
d
V/µs
V/dt (on)
V/dt
E
Turn ON energy
mJ
on
Td
Turn-off delay time
65
8
150
20
10
—
See figure 4
off
µs
T
d
Fall time to V
Turn OFF d
= 10% of V
out cc
f
5
V/µs
V/dt (off)
V/dt
E
off
Turn OFF energy
0.75
mJ
Protection Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
T
Over-temp. positive going threshold
Over-temp. negative going threshold
Over-current threshold
oC
oC
A
See fig. 2
See fig. 2
See fig. 2
—
—
—
—
50
2
sd+
sd-
165
158
I
I
22
0.3
35
1
sd
open load
Open load detection threshold
A
µs
T
T
Minimum time to reset protections
Blanking time before considering Dg
—
—
50
7
—
100
V
= 0V
reset
in
µs Part turned on with Vin =5V
dg
Functional Block Diagram
All values are typical
VCC
4.5
4.2
V
50V
V
Under voltage
lock out
62
V
Charge
pump
2.6
2.0
V
Level
shift
driver
IN
V
Ω
5.5V
5.5V
200 K
Over
current
S
Q
+
-
Over
35 A
DG
R
temperature
165°C
158°CTj
+
Ω
40
22 mV
Open load
-
VOUT
GND
4
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IPS5451/IPS5451S
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
1 2 3 4 5
1 2 3 4 5
5 Lead - D2PAK (SMD220)
5 Lead - TO220
IPS5451
IPS5451S
Part Number
T clamp
Vin
5 V
0 V
Vin
t > T reset
t < T reset
I shutdown
Iout
I shutdown
OI
Iout
Out
( + Vcc
)
T
Tsd+
T shutdown +
0 V
V clamp
T shutdown -
(
see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
Figure 2 - Protection timing diagram
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5
IPS5451/IPS5451S
Vin
Vin
Vcc
90%
Vcc - 5V
90%
dV/dt off
Vout
dV/dt on
Tr 1
Vout
10%
10%
Td on
Tr 2
Td off
E1(t)
Tf
Iout1
Eon1
Iout2
Resistive load
E2 (t)
Inductive load
Eon2
Figure 3 - Switching times definition (turn-on)
Turn on energy with a resistive or an
inductive load
Figure 4 - Switching times definition (turn-off)
1,00E-02
Vin = 5 V
Vcc
Dg
1,00E-03
1,00E-04
1,00E-05
1,00E-06
Out
IN
+
Gnd
14 V
-
L
R
Vin
Vin = 0 V (sleep mode)
Vout
5 v
0 v
Iout
Rem : V load is negative during demagnetization
0
5
10
15
20
25
30
35
Figure 5 - Active clamp test circuit
Figure 6 - I (mA) Vs V (V)
cc cc
6
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IPS5451/IPS5451S
5
4
3
2
1
0
50
40
30
20
10
0
VIH
VIL
Hys t er es i s
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25
50 75 100 125 150
Figure 7 - Iin ( µA ) Vs Tj (°C)
Figure 8 - VIH, VIL threshold ( V ) Vs Tj (°C)
40
30
20
10
0
25
20
15
10
5
0
-50 -25
0
25 50 75 100 125 150
0
5
10
15
20
25
Figure 9 - Rdson (mΩ) vs Vcc (V)
Figure 10 - Rdson (mΩ) vs Tj (°C)
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IPS5451/IPS5451S
25
20
15
10
5
1000
100
10
Tj=25oC Free air/
std footprint
Current path capacity
should be above this curve
Load characteristic should
be below this curve
0
0
5
10
15
20
25
Figure 11 - Rdson (mΩ) vs Iout (A)
Figure 12 - Isd (A) vs Time (S)
50
40
30
20
10
0
30
25
20
15
10
5
rth = 5°C/W
rth = 15°C/W
rth = 30°C/W
T0220 free air 60°C/W
0
-50
0
50
100
150
200
-50 -25
0
25 50 75 100 125 150
Figure 13 - Isd (A) vs Tj (°C)
Figure 14 - Max. Cont. Ids ( A ) Vs
Amb. Temperature ( °C)
8
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IPS5451/IPS5451S
10 0
10
single pulse
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
100
10
1
1
0 .1
Rth std footprint/TO220 freeair
Rth junction to case
0 .0 1
0.1
0 .0 0 1
0 .0 1
0 .1
1
1 0
1 0 0
Figure 15 -Max. I clamp ( A ) Vs
Inductive Load ( m H )
Figure 16 - Transient Rth ( °C/W ) Vs Time (s)
6
4
2
0
10000
Eon
Eoff
I=Imax vs L (see fig.15)
1000
100
10
1
I=5
I=1A
0
5
10
15
20
25
0
0.01
0.10
1.00
10.00
100.00
Figure 17 - Eon, Eoff (mJ) vs I
(A)
Figure 18 - Eon @ Vcc=14V (mJ) vs Inductance (mH)
out
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IPS5451/IPS5451S
2.00
1.50
1.00
0.50
0.00
30
20
10
0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Figure 19 - I open load (A) vs Tj (°C)
Figure 20 - Iqc (µA) vs Tj (°C)
Case Outline - TO220 (5 lead)
IRGB 01-3042 01
10
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IPS5451/IPS5451S
Case Outline - D2PAK (SMD220) - 5 Lead
01-3066 00
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11
IPS5451/IPS5451S
Tape & Reel - D2PAK (SMD220) - 5 Lead
01-3071 00 / 01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++ 44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 3/27/2000
12
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