IR060PM12CS02CBPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR060PM12CS02CBPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 快速恢复二极管 |
| 文件： | 总3页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0119J rev. A 11/00
IR060PM12CS02CB
FAST RECOVERY DIODE
Junction Size:
Square 60 x 60 mils
Wafer Size:
4"
VRRM Class:
1200 V
PassivationProcess:
Reference IR Packaged Part:
Glassivated MOAT
Major Ratings and Characteristics
Parameters
Units
1.3V
TestConditions
VFM
VRRM Reverse Breakdown Voltage
TypicalReverseRecoveryTime
Maximum Forward Voltage
TJ =25°C, IF =2A
1200V
55ns
TJ = 25°C, IRRM = 10 µA
TJ =25°C, IF =1A,-di/dt=100A/µs
(1)
t
rr
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition,Thickness
Cr-Ni-Ag(1KA-4KA-6KA)
100%Al (5µm)
Nominal Front Metal Composition,Thickness
Chip Dimensions
60x60mils(seedrawing)
100mm, withstd. <110>flat
260µm,±10µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
45µm
Reject Ink Dot Size
0.25mmdiameterminimum
See drawing
Ink Dot Location
Recommended Storage Environment
Storageinoriginalcontainer,inessicated
nitrogen,withnocontamination
1
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IR060PM12CS02CB
Preliminary Data Sheet I0119J rev. A 11/00
Ordering Information Table
Device Code
IR 060
P
M
12
C
S02 CB
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
InternationalRectifierDevice
Chip Dimension in Mils
TypeofDevice
: P = Wire Bondable Fast Recovery Diode (Platinum)
PassivationProcess: M = Glassivated MOAT
Voltage code
Metallization
: Code x 100 = VRRM
: C = Aluminium (Anode) - Silver (Cathode)
t
code6
rr
CB
CF
: Probed Uncut Die (wafer in box)
: Inked Probed Sawn wafer on film (blue tape)
Outline Table
INK DOT WITH INDICATION SITE
Ag
Al
+ 15
- 5
5 TYP.
(0.2 typ.)
1044
+ 0.59
(41
)
- 0.2
1524 - 50 (60 - 2)
260 10
±
(10.23 0.39)
±
All dimensions are in microns (mils)
2
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IR060PM12CS02CB
Preliminary Data Sheet I0119J rev. A 11/00
Wafer Layout
TOP VIEW
N° 3000 Basic Cells
100 ± 0.5
32.5 ø 2.5
All dimensions are in millimeters
3
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相关型号：
IR080DM12CCB
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 2.03 X 2.03 MM, DIE-2
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