IRF3205STRLPBF [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | IRF3205STRLPBF |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总11页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95106
IRF3205SPbF
IRF3205LPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 8.0mΩ
G
l Fully Avalanche Rated
l Lead-Free
ID = 110Aꢀ
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETsarewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capabilityandthelowestpossibleon-resistanceinanyexistingsurface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D2Pak
IRF3205SPbF
TO-262
IRF3205LPbF
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
Parameter
Max.
110 ꢀ
80
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
390
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Current
62
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
°C/W
RθJC
RθJA
Junction-to-Ambient (PCB mounted, steady-state)*
–––
40
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1
03/11/04
IRF3205S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 8.0
mΩ VGS = 10V, ID = 62A
2.0
44
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 62A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 146
––– ––– 35
––– ––– 54
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 62A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
14 –––
VDD = 28V
––– 101 –––
ID = 62A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
50 –––
65 –––
RG = 4.5Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
––– 3247 –––
––– 781 –––
––– 211 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
pF
ƒ = 1.0MHz, See Fig. 5
––– 1050264 mJ IAS = 62A, L = 138µH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
110
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 390
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 69 104
––– 143 215
V
TJ = 25°C, IS = 62A, VGS = 0V
TJ = 25°C, IF = 62A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 138µH
junction temperature. Package limitation current is 75A.
RG = 25Ω, IAS = 62A. (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRF3205S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 175 C
J
1
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1ꢀ Typical Output Characteristics
Fig 2ꢀ Typical Output Characteristics
2.5
1000
107A
I =
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
V
= 25V
20µs PULSE WIDTH
DS
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
6
8
10 12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3ꢀ Typical Transfer Characteristics
Fig 4ꢀ Normalized On-Resistance
Vsꢀ Temperature
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3
IRF3205S/LPbF
6000
16
14
12
10
8
I =
D
62A
V
C
= 0V, f = 1 MHZ
GS
= C + C , C
SHORTED
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
iss
gs gd ds
C
= C
gd
5000
4000
3000
2000
1000
0
rss
C
= C + C
oss
ds
gd
Ciss
6
Coss
Crss
4
2
0
0
20
40
60
80
100
120
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5ꢀ Typical Capacitance Vsꢀ
Fig 6ꢀ Typical Gate Charge Vsꢀ
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
1000
100
10
10us
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
1
10
100
1000
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7ꢀ Typical Source-Drain Diode
Fig 8ꢀ Maximum Safe Operating Area
Forward Voltage
4
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IRF3205S/LPbF
RD
VDS
120
100
80
60
40
20
0
LIMITED BY PACKAGE
VGS
DꢀUꢀTꢀ
RG
+
-
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10aꢀ Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
10%
T , Case Temperature( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9ꢀ Maximum Drain Current Vsꢀ
Fig 10bꢀ Switching Time Waveforms
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
SINGLE PULSE
(THERMAL RESPONSE)
1
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11ꢀ Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3205S/LPbF
500
400
300
200
100
0
I
D
15V
TOP
25A
44A
BOTTOM 62A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
Ω
0.01
t
p
Fig 12aꢀ Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12cꢀ Maximum Avalanche Energy
Vsꢀ Drain Current
I
AS
Fig 12bꢀ Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13bꢀ Gate Charge Test Circuit
Fig 13aꢀ Basic Gate Charge Waveform
6
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IRF3205S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14ꢀ For N-Channel HEXFETS
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7
IRF3205S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
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IRF3205S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
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9
IRF3205S/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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