IRF630N_04 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRF630N_04 |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总11页 (文件大小:241K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
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HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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76
INFINEON
IRF630PBF
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36
VISHAY
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0
RENESAS
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N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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68
STMICROELECTR
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NXP
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52
TRSYS
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Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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20
VISHAY
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0
MOTOROLA
IRF630SPBF
HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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54
INFINEON
IRF630ST4
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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46
STMICROELECTR
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Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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23
VISHAY
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18
VISHAY
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0
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0
MOTOROLA
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0
MOTOROLA
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0
MOTOROLA
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1
MOTOROLA
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Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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0
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82
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85
FAIRCHILD
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