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IRFBC40L [IRF]

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A); 功率MOSFET （ VDSS = 600V ， RDS（ON） = 1.2ohm ，ID = 6.2A ）
IRFBC40L
元器件型号： IRFBC40L
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
功率MOSFET （ VDSS = 600V ， RDS（ON） = 1.2ohm ，ID = 6.2A ）
PDF文件： 总10页 (文件大小：352K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFBC40L参数
 查看货源

IRFBC40LC

 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 43A I(D) | TO-220VAR

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35 ETC

IRFBC40LC

 Power MOSFET

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19 VISHAY

IRFBC40LC

 HEXFET-R POWER MOSFET

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35 IRF

IRFBC40LC

 HEXFET-R POWER MOSFET

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24 IRF

IRFBC40LC-002

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-002PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-006PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-010

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-017PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-019PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LC-024PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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2 VISHAY

IRFBC40LC-031PBF

 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRFBC40LCPBF

 Power MOSFET

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45 VISHAY

IRFBC40LPBF

 Power MOSFET

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19 VISHAY

IRFBC40LPBF

 HEXFET㈢ Power MOSFET

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28 IRF
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