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元器件品牌
IRFI5210
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号：
IRFI5210
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET
HEXFET功率MOSFET
PDF文件：
总8页 (文件大小：152K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFI5210参数
查看货源
IRFI530
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-220AB
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ETC
IRFI530-013
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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INFINEON
IRFI530-013
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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0
IRF
IRFI530A
Advanced Power MOSFET
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14
FAIRCHILD
IRFI530A
Advanced Power MOSFET
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22
FAIRCHILD
IRFI530G
HEXFET POWER MOSFET
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IRF
IRFI530G
HEXFET POWER MOSFET
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74
IRF
IRFI530G
Power MOSFET
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19
VISHAY
IRFI530G-002PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
IRF
IRFI530G-003PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
IRF
IRFI530G-004PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRF
IRFI530G-005PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRF
IRFI530G-006PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRF
IRFI530G-009PBF
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
IRF
IRFI530G-011
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRF
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