关闭背景特效

IRFN054 [IRF]

POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*); 功率MOSFET N沟道（ BVDSS = 60V ， RDS（ON） = 0.020ohm ，ID = 55A * ）

IRFN054


元器件型号：	IRFN054
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A) 功率MOSFET N沟道（ BVDSS = 60V ， RDS（ON） = 0.020ohm ，ID = 55A ）晶体晶体管功率场效应晶体管开关脉冲 CD
PDF文件：	总6页 (文件大小：187K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFN054参数

IRFN054SMD

N-CHANNEL POWER MOSFET

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18 SEME-LAB

IRFN130SMD

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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13 SEME-LAB

IRFN130SMD05

N-Channel

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12 ETC

IRFN130SMD05

N–CHANNEL POWER MOSFET

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5 SEME-LAB

IRFN130SMD05

N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS

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6 SEME-LAB

IRFN140

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A)

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39 IRF

IRFN140PBF

暂无描述

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0 IRF

IRFN140SMD

N-CHANNEL POWER MOSFET

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18 SEME-LAB

IRFN150

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)

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41 IRF

IRFN150PBF

Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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0 IRF

IRFN150SMD

N-CHANNEL POWER MOSFET

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18 SEME-LAB

IRFN214B

250V N-Channel MOSFET

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20 FAIRCHILD

IRFN214BTA_FP001

Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN

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0 FAIRCHILD

IRFN240

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)

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32 IRF

IRFN240SMD

N-CHANNEL POWER MOSFET

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8 SEME-LAB

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