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IRFN150 [IRF]

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A); 功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.060ohm ，ID = 34A ）
IRFN150
元器件型号： IRFN150
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)
功率MOSFET N沟道（ BVDSS = 100V ， RDS（ON） = 0.060ohm ，ID = 34A ）

晶体 晶体管 功率场效应晶体管 开关 脉冲
PDF文件： 总6页 (文件大小：189K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFN150参数
 查看货源

IRFN150PBF

 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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0 IRF

IRFN150SMD

 N-CHANNEL POWER MOSFET

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18 SEME-LAB

IRFN214B

 250V N-Channel MOSFET

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20 FAIRCHILD

IRFN214BTA_FP001

 Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN

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0 FAIRCHILD

IRFN240

 POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)

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32 IRF

IRFN240SMD

 N-CHANNEL POWER MOSFET

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8 SEME-LAB

IRFN250

 POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)

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69 IRF

IRFN250

 N–CHANNEL POWER MOSFET

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24 SEME-LAB

IRFN250PBF

 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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1 IRF

IRFN250SMD

 N-CHANNEL POWER MOSFET

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14 SEME-LAB

IRFN340

 POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A)

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25 IRF

IRFN340PBF

 暂无描述

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0 IRF

IRFN340SMD

 N-CHANNEL POWER MOSFET

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14 SEME-LAB

IRFN350

 POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)

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16 IRF

IRFN350PBF

 Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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1 IRF
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