关闭背景特效

IRFP250N [IRF]

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A); 功率MOSFET （ VDSS = 200 V， RDS（ON） = 0.075ohm ，ID = 30A ）

IRFP250N


元器件型号：	IRFP250N
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET （ VDSS = 200 V， RDS（ON） = 0.075ohm ，ID = 30A ）晶体晶体管功率场效应晶体管开关局域网
PDF文件：	总8页 (文件大小：122K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFP250N参数

IRFP250NPBF

HEXFET㈢ Power MOSFET

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599 IRF

IRFP250PBF

HEXFET㈢ Power MOSFET

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106 IRF

IRFP250PBF

Power MOSFET

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56 VISHAY

IRFP250R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247

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138 ETC

IRFP251

N-Channel(Hexfet Transistors)

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95 IRF

IRFP251

N-Channel Power Mosfets

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71 SAMSUNG

IRFP251

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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61 IXYS

IRFP251R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247

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23 ETC

IRFP252

N-Channel(Hexfet Transistors)

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51 IRF

IRFP252

N-Channel Power Mosfets

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34 SAMSUNG

IRFP252

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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26 IXYS

IRFP252

Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP252R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247

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21 ETC

IRFP253

N-Channel(Hexfet Transistors)

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56 IRF

IRFP253

N-Channel Power Mosfets

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28 SAMSUNG

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