IRFS59N10DTRRP [IRF]
暂无描述;
| 型号： | IRFS59N10DTRRP |
| 厂家： | 
INTERNATIONAL RECTIFIER |
| 描述： | 暂无描述 |
| 文件： | 总11页 (文件大小：141K) |
| 下载： | 下载PDF数据表文档文件 |
IRFS610A
Advenced Power MOSFET (N-CHANNEL)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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26
FAIRCHILD
IRFS610B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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26
FAIRCHILD
IRFS614A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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18
ETC
IRFS614B
250V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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18
FAIRCHILD
IRFS614B_FP001
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
IRFS614BYDTU-FP001
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
IRFS620
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
ETC
IRFS620
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS620A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ETC
IRFS620B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
FAIRCHILD
IRFS621
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
ETC
IRFS621
Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS622
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS624
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ETC
IRFS624
Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
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