关闭背景特效

IRFY9130CM [IRF]

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A); POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.3ohm ，ID = -11.2A ）

IRFY9130CM


元器件型号：	IRFY9130CM
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A) POWER MOSFET P- CHANNEL （ BVDSS = -100V ， RDS（ON） = 0.3ohm ，ID = -11.2A ）晶体晶体管开关脉冲局域网
PDF文件：	总6页 (文件大小：246K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFY9130CM参数

IRFY9130CMPBF

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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0 IRF

IRFY9130M

P-Channel

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14 ETC

IRFY9130M

P-Channel MOSFET in a Hermetically sealed

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11 SEME-LAB

IRFY9130MEAPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9130MEB

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9130MEBPBF

暂无描述

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0 IRF

IRFY9130MEDPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9140

POWER MOSFET THRU-HOLE (TO-257AA)

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39 IRF

IRFY9140

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRFY9140

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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25 SEME-LAB

IRFY9140C

POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140C

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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18 SEME-LAB

IRFY9140CM

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)

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30 IRF

IRFY9140CM

POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140CMPBF

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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0 IRF

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