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元器件品牌
IRL5NJ024
[IRF]
LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5); 逻辑电平HEXFET功率MOSFET表面贴装（ SMD- 0.5 ）
元器件型号：
IRL5NJ024
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
逻辑电平HEXFET功率MOSFET表面贴装（ SMD- 0.5 ）
PDF文件：
总7页 (文件大小：116K)
下载文档：
下载PDF数据表文档文件
型号参数：IRL5NJ024参数
查看货源
IRL5NJ7404
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL
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67
IRF
IRL5NJ7413
30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
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39
ETC
IRL5NJ7413
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 30V, N-CHANNEL
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156
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25
IRF
IRL5Y024CM
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)
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33
IRF
IRL5Y7413CM
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)
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156
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18
IRF
IRL5Y7413CM
30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
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156
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20
ETC
IRL60B216
Brushed Motor drive applications
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156
-
1
IRF
IRL60B216_15
Brushed Motor drive applications
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on line
156
-
0
IRF
IRL60S216
Half-bridge and full-bridge topologies
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156
-
0
INFINEON
IRL60SL216
Half-bridge and full-bridge topologies
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on line
156
-
0
INFINEON
IRL610
Advanced Power MOSFET
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on line
156
-
38
FAIRCHILD
IRL610
Advanced Power MOSFET
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156
-
16
FAIRCHILD
IRL610
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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156
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0
SAMSUNG
IRL610A
Advanced Power MOSFET
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156
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25
FAIRCHILD
IRL610AJ69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
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-
0
FAIRCHILD
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