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IRLML0060PBF

更新时间：2024-09-18 22:09:32

品牌：INFINEON

描述：Industry-standard pinout

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IRLML0060PBF 概述

Industry-standard pinout

IRLML0060PBF 数据手册

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PD - 97439A

IRLML0060TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 16

R_{DS(on) max}

(@V_GS= 10V)



R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)

116



IRLML0060TRPbF

Application(s)

Load/ System Switch

Features and Benefits

Features

Benefits

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Industrial qualification



Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

2.7

2.1

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

0.80

0.01

± 16

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

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03/09/12

IRLML0060TRPbF

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

–––

0.06

–––

116

V_GS= 0V, I_D= 250μA



V_(BR)DSS/ T_J

Breakdown Voltage Temp. Coefficient

–––

1.0

V/°C Reference to 25°C, I_D= 1mA

V_GS= 4.5V, I_D= 2.2A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage



V_GS= 10V, I_D= 2.7A

V_GS(th)

I_DSS

–––

1.6

–––

2.5

0.7

1.3

5.4

6.3

6.8

4.2

290

2.5

V_DS= V_GS, I_D= 25μA

–––

7.6

V_DS= 60V, V_GS= 0V

Drain-to-Source Leakage Current

μA

250

100

-100

–––

V_DS= 60V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

V_GS= 20V

_GS= -20V

R_G



gfs

Q_g

V_DS= 25V, I_D= 2.7A

I_D= 2.7A

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS=30V

V_GS= 4.5V

V_DD= 30V

Rise Time

I_D= 1.0A

t_d(off)

t_f

Turn-Off Delay Time

R_G= 6.8

V_GS= 4.5V

Fall Time

C_iss

C_oss

C_rss

Input Capacitance

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

1.6

(Body Diode)

showing the

integral reverse

I_SM

Pulsed Source Current

–––

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.3

T_J= 25°C, I_S= 2.7A, V_GS= 0V

Reverse Recovery Time

Reverse Recovery Charge

ns T_J= 25°C, V_R= 30V, I_F=1.6A

di/dt = 100A/μs

Q_rr

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IRLML0060TRPbF

100

VGS

10V

VGS

10V

60μs PULSE WIDTH

Tj = 25°C



60μs PULSE WIDTH

Tj = 150°C



TOP

6.0V

4.5V

4.0V

3.5V

3.3V

3.0V

2.8V

6.0V

4.5V

4.0V

3.5V

3.3V

3.0V

2.8V

BOTTOM

0.1

0.01

2.8V

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

2.0

1.5

1.0

0.5

= 2.7A

= 10V

= 150°C

= 25°C

= 25V



60μs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

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IRLML0060TRPbF

14.0

12.0

10.0

8.0

10000

= 0V,

= C

f = 1 MHZ

I = 2.7A

+ C , C

SHORTED

iss

= C

rss

oss

= 48V

= 30V

= 12V

= C + C

1000

100

iss

6.0

oss

rss

4.0

2.0

0.0

0.1

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100μsec

1msec

10msec

= 150°C

= 25°C

0.1

0.01

= 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

0.2

0.4

0.6

0.8

1.0

1.2

100

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLML0060TRPbF

3.0

2.5

2.0

1.5

1.0

0.5

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width µs

Duty Factor 

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Ambient Temperature (°C)

10%

Fig 9. Maximum Drain Current vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

1000

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

SINGLE PULSE

( THERMAL RESPONSE )

0.01

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML0060TRPbF

400

150

125

100

= 2.7A

Vgs = 4.5V

300

200

100

= 125°C

Vgs = 10V

= 25°C

I , Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs. Drain

Fig 12. Typical On-Resistance vs. Gate

Current

Voltage

Current Regulator

Same Type as D.U.T.

50K

.2F

12V

.3F

V_GS

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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IRLML0060TRPbF

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

100

= 250μA

= 25μA

-75 -50 -25

25 50 75 100 125 150

100

1000

10000 100000

, Temperature ( °C )

Time (sec)

Fig 16. Typical Power vs. Time

Fig 15. Typical Threshold Voltage vs. Junc-

tion Temperature

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IRLML0060TRPbF

Micro3 (SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MILLIMETERS

INCHES

SYMBOL

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

0.95

1.90

0.40

0.54

0.25

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

BSC

0.60

REF

BSC

MIN

MAX

0.0004

0.15 [0.006]

B A

0.10 [0.004]

0.20 [0.008] M

B A

NOTES:

REF

BSC

Recommended Footprint

0.972

0.950

2.742

0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

3X L

1.900

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

DATE CODE MARKING INSTRUCTIONS

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRLML0060TRPbF

Micro3Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

8.3 ( .326 )

3.45 ( .136 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRLML0060TRPbF

Orderable part number

Package Type

Micro3 (SOT-23)

Standard Pack

Note

Form

Tape and Reel

Quantity

IRLML0060TRPbF

3000

Qualification information^†

Cons umer^††

(per JE DEC JES D47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

Micro3 (SOT-23)

(per IPC/JE DE C J-S TD-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/12

www.irf.com

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