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IRLU110PBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRLU110PBF
型号： IRLU110PBF
厂家： Infineon    Infineon
描述：

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总10页 (文件大小：1152K)
中文：  中文翻译
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相关型号：

IRLU111

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | TO-251

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15 ETC

IRLU120

 Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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54 INFINEON

IRLU120

 Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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2 SAMSUNG

IRLU120A

 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRLU120ATU

 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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1 FAIRCHILD

IRLU120N

 Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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95 INFINEON

IRLU120NPBF

 Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 INFINEON

IRLU120PBF

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33 VISHAY

IRLU121

 Power Field-Effect Transistor, 7.9A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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IRLU130

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IRLU130A

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IRLU130ATU

 Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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1 FAIRCHILD

IRLU210

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3 SAMSUNG

IRLU210A

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14 FAIRCHILD

IRLU210ATU

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0 FAIRCHILD

IRLU211

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13 ETC

IRLU220

 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 SAMSUNG

IRLU220A

 ADVANCED POWER MOSFET

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11 FAIRCHILD

IRLU220A

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1 SAMSUNG

IRLU220ATU

 Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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1 FAIRCHILD
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