RT2A00M [ISAHAYA]

COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE; 复合晶体管低频AMPLIFY应用硅NPN外延型


型号：	RT2A00M
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 复合晶体管低频AMPLIFY应用硅NPN外延型晶体晶体管
文件：	总4页 (文件大小：59K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RT2A 00M

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2A00M isacompositetransistor builtwithtwo 2SA1602A chipsin

SC-88package.

1.25

FEATURE

①

⑤

④

●Silicon pnp epitaxial type

Each transistor elements are independent.

●Mini package for easy mounting

②

③

APPLICATION

For low frequency amplify application

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

Tr1

Tr2

④：COLLECTOR２

⑤：COLLECTOR１

JEITA：－

JEDEC：－

①

②

③

MAXIMUM RATINGS （Ta=25℃）（Tr1、Tr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Ratings

-60

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

-6

Collector to Emitter voltage

Collector current

-50

・

M E

-200

℃

P_C

Collector dissipation（Total Ta=25℃）

Junction temperature

Storage temperature

150

T_j

＋125

-55～＋125

TYPE

hFE ITEM

①

② ③

T_stg

ISAHAYA ELECTRONICS CORPORATION

RT2A 00M

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

ELECTRICAL CHARACTERISTICS （Ta=25℃）（Tr1、Tr2）

Limits

Symbol

V_(BR)CEO

Parameter

Testconditions

Unit

Min

-50

Typ

Max

Collector to Emitter break down voltage

Collector cut off current

Emitter cut off current

I _C=-100μA，R_BE=∞

μA

CBO

V_CB=-60V，I_E=0mA

-0.1

800

EBO

V_EB=-6V，I_C=0mA

h_FE*

h_FE

DC forwardcurrentgain

V_CE=-6V，I _C=-1mA

150

DC forwardcurrentgain

V_CE=-6V，I _C=-0.1mA

V_CE(sat)

Collectorto Emittersaturationvoltage

Gain band width product

Collector output capacitance

Noise figure

I _C=-100mA，I_B=-10mA

V_CE=-6V，I _E=10mA

-0.3

200

4.0

MHz

Cob

V_CB=-6V，I_E=0mA，f=1MHz

V_CE=-6V，I _E=0.3mA，f=100Hz，R _G=10kΩ

* : It shows h_FEclassificationinrighttable.

ITEM

hFE

150～300 250～500

M･E M･F

MARKING

ISAHAYA ELECTRONICS CORPORATION

RT2A 00M

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

COMMON EMITTER OUTPUT

COMMON EMITTER TRANSFER

-50

-40

-30

-20

-10

-0

0.18mA

0.16mA

Ta=25℃

0.14mA

Ta=25℃

VCE=-6V

-40

0.12mA

0.10mA

-30

-20

-10

-0

0.08mA

0.06mA

0.04mA

0.02mA

IB=0

-0

-1

-2

-3

-4

-5

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

BASE TO EMITTER VOLTAGE VBE(V)

COLLECTOR EMITTER VOLTAGE VCE(V)

GAIN BAND WIDTH PRODUCT

VS. EMITTER CURRENT

DC FORWARD CURRENT GAIN

VS. COLLECTOR CURRENT

10000

1000

100

250

200

150

100

Ta=25℃

VCE=-6V

100(@IC=-1m

Ta=25℃

VCE=-6V

0.1

EMITTER CURRENT IE(mA)

100

-0.1

-1

-10

-100

COLLECTOR CURRENT IC(mA)

-1000

COLLECTOR OUTPUT CAPACITANCE

VS. COLLECTOR TO BASE VOLTAGE

100

Ta=25℃

IE=0

f=1MHz

0.1

-0.1

-1

-10

-100

COLLECTOR TO BASE VOLTAGE VCB(V)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT2A00M [ISAHAYA]

相关型号：

RT2A00ME

RT2A00MF

RT2C00M

RT2N03M

RT2N04M

RT2N05M

RT2N07M

RT2N08M

RT2N09M

RT2N12M

RT2N14M

RT2N20M