RT3AMMAM1F [ISAHAYA]
Transistor;
| 型号： | RT3AMMAM1F |
| 厂家： | 
ISAHAYA ELECTRONICS CORPORATION |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
Unit：mm
RT3AMMAM1 is compound transistor built with two
ISA1235A chips in SC-88 package.
FEATURE
Silicon PNP epitaxial type
Each transistor elements are independent.
Mini package for easy mounting.
APPLICATION
For low frequency amplify application.
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
Tr1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
Tr2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.)
SYMBOL
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
RATING
-60
UNIT
V
MARKING
V
CBO
V
EBO
V
CEO
-6
V
6
5
4
-50
V
-200
mA
mW
℃
I
C
AAF
Collector dissipation（Total,Ta=25℃）
Junction temperature
150
P
T
T
C
.
＋150
-55～＋150
j
℃
Storage temperature
stg
１
2
3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1, Tr2.)
Limits
Symbol
Parameter
Test conditions
I =100μA,R =∞
Unit
Min
Typ
Max
-
Collector to Emitter break down voltage
Collector cut off current
-50
-
V
μA
μA
-
V
(BR)CEO
C
BE
-
-
-0.1
-0.1
500
-
I
I
V
=-60V,I =0
CBO
CB
EB
CE
CE
E
Emitter cut off current
-
-
V
V
V
=-6V,IC=0
EBO
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
150
-
-
h
h
*
=-6V,I =-1mA
C
FE
FE
90
-
-
=-6V,I =-0.1mA
C
-
-0.3
-
V
V
I =-100mA,I =-10mA
C B
CE(sat)
-
200
4.0
-
f
V
=-6V,I =10mA
MH
pF
T
CE
CB
CE
E
Z
-
-
C
V
V
=-6V,I =0,f=1MH
E Z
ob
NF
-
20
dB
=6V,I =0.3mA,f=100H ,R =10kΩ
E
Z
G
* : It shows hFE classification in right table.
item
E
F
150～300
250～500
h
FE
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
TYPICAL CHARACTERISTICS (Tr1,r2.)
COMMON EMITTER OUTPUT
COMMON EMITTER TRANSFER
-50
IB=-0.18mA
IB=-0.16mA
IB=-0.20mA
-50
-40
-30
-20
-10
-0
IB=-0.14mA
VCE=-6V
IB=-0.12mA
IB=-0.10mA
-40
-30
-20
-10
-0
IB=-0.08mA
IB=-0.06mA
IB=-0.04mA
IB=-0.02mA
IB=0
-0
-1
-2
-3
-4
-5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
COLLECTOR・EMITTER VOLTAGE VCE(V)
BASE TO EMITTER VOLTAGE VBE[V]
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
400
300
200
100
0
1000
100
10
VCE=-6V
VCE=-6V
100(@IC=-1mA)
0.1
1
10
100
-0.1
-1
-10
-100
-1000
EMITTER CURRENT IE[mA]
COLLECTOR CURRENT IC[mA]
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
10
1
0
-0.1
-1 -10
COLLECTOR TO BASE VOLTAGE VCB[V]
-100
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Aug.2010
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