BD93F [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BD93F
型号: BD93F
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDT91F/93F/95F  
DESCRIPTION  
·DC Current Gain- hFE= 20~200@ IC= 4A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F;  
100V(Min)- BDT95F  
·Complement to Type BDT92F/94F/96F  
APPLICATIONS  
·Designed for use in audio output stages and general  
amplifier and switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
60  
UNIT  
BDT91F  
BDT93F  
BDT95F  
BDT91F  
BDT93F  
BDT95F  
VCBO  
Collector-Base Voltage  
V
80  
100  
60  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
80  
100  
7
VEBO  
IC  
ICM  
IB  
V
A
Collector Current-Continuous  
Collector Current-Peak  
10  
20  
A
Base Current-Continuous  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
32  
W
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
6.4  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDT91F/93F/95F  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX UNIT  
BDT91F  
BDT93F  
BDT95F  
Collector-Emitter  
Sustaining Voltage  
IC= 100mA ; IB= 0  
V
80  
100  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
IC= 4A; IB= 0.4A  
IC= 10A; IB= 3.3A  
IC= 4A; VCE= 4V  
1
3
V
V
)-1  
sat  
VCE(  
)-2  
sat  
1.6  
V
VBE(  
)
on  
VCB= VCBOmax; IE= 0  
0.1  
5
ICBO  
mA  
mA  
mA  
VCB=1/2VCBOmax; IE= 0,TJ=150℃  
ICEO  
IEBO  
hFE-1  
hFE-2  
fT  
VCE= VCEOmax V; IB= 0  
VEB= 7V; IC= 0  
1
1
DC Current Gain  
IC= 4A ; VCE= 4V  
20  
5
200  
DC Current Gain  
IC= 10A ; VCE= 4V  
IC= 500mA ; VCE= 10V  
Current-Gain—Bandwidth Product  
4
MHz  
Switching times  
Turn-On Time  
Turn-Off Time  
0.5  
2
1
4
μs  
μs  
ton  
toff  
IC= 4A; IB1= -IB2= 0.4A  
2
isc Websitewww.iscsemi.cn  

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