BD93F [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管型号: | BD93F |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | isc Silicon NPN Power Transistor |
文件: | 总2页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDT91F/93F/95F
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F;
100V(Min)- BDT95F
·Complement to Type BDT92F/94F/96F
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
60
UNIT
BDT91F
BDT93F
BDT95F
BDT91F
BDT93F
BDT95F
VCBO
Collector-Base Voltage
V
80
100
60
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
80
100
7
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
10
20
A
Base Current-Continuous
4
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
32
W
℃
℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
6.4
℃/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDT91F/93F/95F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX UNIT
BDT91F
BDT93F
BDT95F
Collector-Emitter
Sustaining Voltage
IC= 100mA ; IB= 0
V
80
100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= 4A; IB= 0.4A
IC= 10A; IB= 3.3A
IC= 4A; VCE= 4V
1
3
V
V
)-1
sat
VCE(
)-2
sat
1.6
V
VBE(
)
on
VCB= VCBOmax; IE= 0
0.1
5
ICBO
mA
mA
mA
VCB=1/2VCBOmax; IE= 0,TJ=150℃
ICEO
IEBO
hFE-1
hFE-2
fT
VCE= VCEOmax V; IB= 0
VEB= 7V; IC= 0
1
1
DC Current Gain
IC= 4A ; VCE= 4V
20
5
200
DC Current Gain
IC= 10A ; VCE= 4V
IC= 500mA ; VCE= 10V
Current-Gain—Bandwidth Product
4
MHz
Switching times
Turn-On Time
Turn-Off Time
0.5
2
1
4
μs
μs
ton
toff
IC= 4A; IB1= -IB2= 0.4A
2
isc Website:www.iscsemi.cn
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