BU407 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BU407
型号: BU407
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总2页 (文件大小:107K)
中文:  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU407  
DESCRIPTION  
·High Voltage: VCEV= 330V(Min)  
·Fast Switching Speed-  
: tf= 750ns(Max)  
·Low Saturation Voltage-  
: VCE(sat)= 1.0V(Max)@ IC= 5A  
APPLICATIONS  
·Designed for use in horizontal deflection output stages  
of TV’s and CRT’s  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
330  
330  
150  
6
UNIT  
V
V
V
V
Collector Current-Continuous  
Collector Current-Peak Repetitive  
Collector Current- Peak (10ms)  
Base Current  
7
A
ICP  
10  
A
ICP  
15  
A
IB  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
60  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.08  
70  
/W  
/W  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU407  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP. MAX UNIT  
IC= 100mA ;IB= 0  
150  
V
IC= 5A; IB= 0.5A  
IC= 5A; IB= 0.5A  
1.0  
1.2  
V
V
)
sat  
VBE(  
)
sat  
V
CE= 330V; VBE= 0  
VCE= 200V; VBE= 0  
VCE= 200V; VBE= 0;TC= 150℃  
5.0  
0.1  
1.0  
ICES  
mA  
mA  
MHz  
pF  
IEBO  
Emitter Cutoff Current  
VEB= 6V; IC=0  
1.0  
fT  
Current-Gain—Bandwidth Product  
Output Capacitance  
10  
IC= 0.5A ; VCE= 10V, ftest= 20MHz  
IE= 0; VCB= 10V; ftest= 1.0MHz  
COB  
80  
IC= 5A; IB1= -IB2= 0.5A, L= 150μH;  
VCC= 40V  
Fall Time  
0.75  
μs  
tf  
2
isc Websitewww.iscsemi.cn  

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