BU4530AW [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU4530AW |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU4530AW
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
TV rceivers and PC monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
UNIT
V
V
7.5
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
16
A
ICM
40
A
IB
10
A
IBM
15
A
Collector Power Dissipation
@TC=25℃
PC
125
W
℃
℃
Junction Temperature
150
Tj
Storage Temperature Range
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU4530AW
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA; IB= 0; L= 25mH
IE= 1mA; IC= 0
MIN
800
7.5
TYP.
MAX
UNIT
V
V
IC= 10A ;IB= 2.22A
3.0
V
VCE
VBE
(sat)
IC= 10A ;IB= 2.22A
1.01
V
(sat)
V
V
CEV=1500V,VBE(off)=0
CEV=1500V,VBE =0;TC=125℃
1.0
2.0
ICES
mA
(off)
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
IC= 10A ; VCE= 5V
12
hFE-2
DC Current Gain
4.8
8.5
Switching times; Resistive load
Storage Time
Fall Time
3.0
4.0
μs
μs
ts
tf
IC= 9A; IB1= 1.8A; IB2= -4.5A
0.20
0.26
isc Website：www.iscsemi.cn
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