BU506F [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU506F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU506F
DESCRIPTION
·High Voltage
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage-VBE=0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1500
700
V
6
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
5
A
ICM
8
A
IB
3
5
A
IBM
A
Collector Power Dissipation
@ TC=25℃
PC
20
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
6.35
55
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU506F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA ; IB= 0; L= 25mH
IC= 3A; IB= 1.33A
MIN
TYP. MAX UNIT
700
V
5.0
1.3
V
V
)
sat
IC= 3A; IB= 1.33A
VBE(
)
sat
VCE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125℃
0.5
1
ICES
mA
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
hFE
DC Current Gain
IC= 3A ; VCE= 5V
2.25
Switching Times; Resistive load
Storage Time
Fall Time
6.5
0.7
μs
μs
tstg
IC= 3A , IB(end)= 1A; LB= 12μH
tf
2
isc Website：www.iscsemi.cn
相关型号：
BU508A
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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