BUT11FI [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUT11FI |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11FI
DESCRIPTION
·
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage VBE= 0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
850
400
V
9
V
Collector Current-Continuous
Collector Current-Peak
Base Current
5
A
ICM
10
A
IB
2
4
A
IBM
Base Current-Peak
A
Collector Power Dissipation
@TC=25℃
PC
35
W
℃
℃
Tj
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
3.57
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
IC= 0.1A; IB= 0
400
V
IC= 3A; IB= 0.6A
IC= 3A; IB= 0.6A
1.5
1.3
V
V
)
sat
VBE(
)
sat
VCE= 850V; VBE= 0
VCE= 850V; VBE= 0; Tj= 125℃
1.0
2.0
ICES
mA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
VEB= 9V; IC= 0
10
35
35
DC Current Gain
IC= 5mA; VCE= 5V
IC= 0.5A; VCE= 5V
10
0
DC Current Gain
Switching Times; Resistive Load
Turn-on Time
Storage Time
Fall Time
1.0
4.0
0.8
μs
μs
μs
ton
IC= 2.5A; IB1= -IB2= 0.5A;
ts
VCC= 250V
tf
isc Website：www.iscsemi.cn
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