KSC5338 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
KSC5338
型号: KSC5338
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总2页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
KSC5338  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR) CEO= 450V(Min)  
·High Switching Speed  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for switching regulator and general purpose  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1000  
450  
V
9
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
5
10  
A
ICM  
A
IB  
2
A
IBM  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
100  
150  
-65~150  
W
TJ  
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
KSC5338  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
PARAMETER  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
IC= 1mA; IE= 0  
MIN  
1000  
450  
9
TYP. MAX UNIT  
V
V
V
IC= 5mA; IB= 0  
IE= 1mA; IC= 0  
IC= 1A; IB= 0.1A  
IC= 2A; IB= 0.4A  
IC= 1A; IB= 0.1A  
IC= 2A; IB= 0.4A  
VCB= 800V; VBE= 0  
VEB= 9V; IC=0  
0.8  
0.5  
1.1  
1.25  
10  
V
V
VCE  
(sat)-1  
VCE  
VBE  
VBE  
(sat)-2  
(sat)-1  
(sat)-2  
V
V
ICBO  
μA  
μA  
IEBO  
hFE-1  
hFE-2  
COB  
fT  
Emitter Cutoff Current  
10  
DC Current Gain  
IC= 0.5A; VCE= 5V  
IC= 2A; VCE= 1V  
IE= 0; VCB= 10V; ftest= 0.1MHz  
IC= 0.1A ;VCE= 6V  
15  
6
30  
DC Current Gain  
Output Capacitance  
70  
14  
pF  
Current-Gain—Bandwidth Product  
MHz  
Switching Times  
Turn-On Time  
0.2  
2.0  
0.5  
μs  
μs  
μs  
ton  
ts  
IC= 1A; IB1= -IB2=0.2A;  
Storage Time  
Fall Time  
VCC= 125V  
tf  
2
isc Websitewww.iscsemi.cn  

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