H11F2G [ISOCOM]
FET Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6;
| 型号： | H11F2G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | FET Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11F1, H11F2, H11F3
PHOTON COUPLED BILATERAL
ANALOG FET
APPROVALS
Dimensions in mm
2.54
l
ULrecognised,FileNo.E91231
1
2
6
5
7.0
6.0
DESCRIPTION
The H11F_ series are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The H11F_ series are mounted in a
standard 6pin dual in line plastic package.
3
4
8.9
max.
8.3 max.
5.1
max.
0.5
min.
3.9
3.1
15°
Max
0.25
0.48
FEATURES
APPLICATIONS (cont.)
As an Analog Signal Switch
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
l
As a remote variable resistor
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
l
l
l
l
≤100Ω to ≥300MΩ
≥ 99.9% Linearity
≤15 pF Shunt Capacitance
≥100GΩ I/O Isolation Resistance
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-55°C to + 150°C
-55°C to + 100°C
As an Analog Signal Switch
l
l
l
l
Extremely low Offset Voltage
60V pk-pk Signal Capability
No Charge Injection or Latchup
ton, toff ≤15µs
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
APPLICATIONS
As a remote variable resistor
l
l
l
Isolated variable attenuator
Automatic gain control
Active filter fine tuning / band switching
OUTPUT TRANSISTOR
Breakdown Voltage
H11F1, H11F2
H11F3
OPTION G
8.3 max
OPTION SM
SURFACEMOUNT
±30V
±15V
Detector Current (continuous)
Power Dissipation
±100mA
300mW
1.2
0.6
1.4
0.9
POWER DISSIPATION
0.26
10.2
9.5
Total Power Dissipation
350mW
10.16
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
http://www.isocom.com
7/12/00
DB91018AAS/A3
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.1
1.75
10
V
V
µA
IF = 16mA
IR = 10µA
VR = 5V
5
Output
(either
polarity)
Breakdown Voltage - V( BR )46 (Note 2)
H11F1, H11F2
30
15
V
V
nA
I46 = 10µA,I = 0
H11F3
I = 10µA,IF = 0
46
Off-state Dark Current - I46
50
50
V = 15V, IFF = 0,
TA46= 25°C
µA
V = 15V, I = 0,
TA46= 100°C F
Off-state Resistance - r46
Capacitance - C46
300
ΜΩ
pF
V46 = 15V, I = 0
V46 = 0, IF =F0,
f = 1 MHz
15
Coupled On-state Resistance - r46 (Note 2)
H11F1
200
330
470
Ω
Ω
Ω
H11F2
H11F3
IF = 16mA, I46 = 100µA
IF = 16mA, I64 = 100µA
On-state Resistance - r64 (Note 2)
H11F1
H11F2
H11F3
200
330
470
Ω
Ω
Ω
Input to Output Isolation Voltage VISO 5300
7500
V
See note 1
See note 1
VIO = 500V (note 1)
VIO= 0, f =1MHz
VRMS
ΩPK
pF
Input-output Isolation Resistance R
1011
Input-output Capacitance
CIfSO
2
Turn-on Time
Turn-off Time
Resistance, non-linearity and asymmetry
ton
toff
25
25
0.1
µs
µs
%
IF= 16mA, V46 = 5V,
RL = 50Ω
IF= 16mA, f = 1kHz
I46= 25µA RMS
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB91018-AAS/A3
On-state Resistance vs. Ambient Temperature
Forward Current vs. Ambient Temperature
3
2
80
70
60
50
Normalized to
IF = 16mA
I46 = 25µA
TA = 25 °C
median
device
40
30
1
0.8
observed
range
20
0.6
0.4
10
0
-50 -25
0
25
50
75 100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Region of Linear Resistance
Normalized Off-state current vs.
Ambient Temperature
100
10000
1000
100
100
40
20
maximum
RMS voltage
40
20
10
10
4
maximum
RMS current
4
Normalized to
V46 = 15V
IF = 0
10
2
0
2
0
TA = 25 °C
1.0
100
1000
10k
100k
0
25
50
75
100
Ambient temperature TA ( °C )
On-state resistance r (on) (Ω)
Resistive non-linearity vs.
D.C. Bias
Input Current vs. Input Voltage
100
5
4
40
20
10
-25°C
TA = 75°C
3
2
4
2
1
25°C
I = 10µA RMS
r46(on) = 200Ω
1
0
0.4
0.2
0.1
0
50 100 150 200 250 300 350
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage VF (V)
D.C. bias voltage V46 (mV)
7/12/00
DB91018-AAS/A3
相关型号：
H11F2SMT&R
FET Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6
ISOCOM
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