H11F2SM [FAIRCHILD]
FET Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6;
| 型号： | H11F2SM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | FET Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6 输出元件 光电 |
| 文件： | 总11页 (文件大小：2083K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
General Description
As a remote variable resistor:
■ ≤ 100Ω to ≥ 300MΩ
■ ≤ 15pF shunt capacitance
■ ≥ 100GΩ I/O isolation resistance
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
As an analog switch:
■ Extremely low offset voltage
■ 60 V
signal capability
pk-pk
■ No charge injection or latch-up
■ UL recognized (File #E90700)
Applications
As a remote variable resistor:
■ Isolated variable attenuator
■ Automatic gain control
■ Active filter fine tuning/band switching
As an analog switch:
■ Isolated sample and hold circuit
■ Multiplexed, optically isolated A/D conversion
Schematic
Package Outlines
OUTPUT
TERM.
1
ANODE
6
5
CATHODE 2
OUTPUT
TERM.
4
3
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Lead Solder Temperature
All
All
All
-40 to +150
-40 to +100
°C
°C
°C
STG
T
OPR
T
260 for 10 sec
SOL
EMITTER
I
Continuous Forward Current
All
All
All
All
60
5
mA
V
F
V
Reverse Voltage
R
I
Forward Current – Peak (10µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly from 25°C
1
A
F(pk)
P
100
1.33
mW
mW/°C
D
DETECTOR
P
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
All
300
4.0
30
mW
mW/°C
V
D
BV
Breakdown Voltage (either polarity)
H11F1M,
H11F2M
4-6
H11F3M
All
15
V
I
Continuous Detector Current (either polarity)
100
mA
4-6
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
V
Input Forward Voltage
I = 16mA
All
All
All
1.3
50
1.75
10
V
F
F
I
Reverse Leakage Current V = 5V
µA
pF
R
R
C
Capacitance
V = 0 V, f = 1.0MHz
J
OUTPUT DETECTOR
BV
Breakdown Voltage
Either Polarity
I
= 10µA, I = 0
H11F1M, H11F2M
30
15
V
4-6
4-6
F
H11F3M
All
I
Off-State Dark Current
V
V
= 15 V, I = 0
50
50
nA
µA
4-6
4-6
F
= 15 V, I = 0,
All
4-6
F
T = 100°C
A
R
C
Off-State Resistance
Capacitance
V
V
= 15 V, I = 0
All
All
300
MΩ
4-6
4-6
F
= 15 V, I = 0,
15
pF
4-6
4-6
F
f = 1MHz
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min Typ* Max Units
DC CHARACTERISTICS
R
On-State Resistance
I = 16mA,
H11F1M
H11F2M
H11F3M
H11F1M
H11F2M
H11F3M
All
200
330
470
200
330
470
Ω
Ω
%
4-6
F
I
= 100µA
4-6
R
On-State Resistance
I = 16mA,
F
6-4
I
= 100µA
6-4
Resistance, non-linearity I = 16mA,
2
F
and assymetry
I
= 25µA RMS,
4-6
f = 1kHz
AC CHARACTERISTICS
t
t
Turn-On Time
Turn-Off Time
R
= 50Ω, I = 16mA,
All
All
45
45
µs
µs
on
L
F
V
= 5V
4-6
R
= 50Ω, I = 16mA,
off
L
F
V
= 5V
4-6
Isolation Characteristics
Symbol Characteristic
Test Conditions
Device
All
Min.
Typ.*
Max.
Units
V
R
C
Isolation Voltage
f = 60Hz, t = 1 sec.
7500
V
PEAK
ISO
ISO
ISO
AC
11
Isolation Resistance
Isolation Capacitance
V
= 500 VDC
All
10
Ω
I-O
f = 1MHz
All
0.2
pF
*All Typical values at T = 25°C
A
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
3
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b, V
x 1.875
1594
V
V
PR
IORM
peak
= V , 100% Production Test with tm = 1 sec, Partial
PR
Discharge < 5pC
Input to Output Test Voltage, Method a, V
x 1.5 =
1275
IORM
peak
V
, Type and Sample Test with tm = 60 sec, Partial
PR
Discharge < 5pC
V
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
4
Typical Performance Curves
Figure 1. Resistance vs. Input Current
Figure 2. Output Characteristics
800
600
400
200
0
I
= 18mA
= 14mA
= 10mA
F
I
F
I
10
F
I
F
= 6mA
I
= 2mA
F
I
F
= 2mA
I
I
I
= 6mA
F
F
F
-200
-400
-600
-800
1
= 10mA
= 14mA
I
= 18mA
F
Normalized to:
I
I
= 16mA
F
= 5μA RMS
46
0.1
-0.2
-0.1
0.0
0.1
0.2
1
1
0
100
V
– OUTPUT VOLTAGE (V)
46
I
F
– INPUT CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
Figure 4. Off-state Current vs. Ambient Temperature
10000
2.0
1.8
1.6
1.4
1.2
NORMALIZED TO:
= 15V
V
46
= 0mA
I
F
T
A
= 25°C
1000
100
10
T
= -40°C
= 25°C
A
T
A
1.0
0.8
T
= 100°C
A
1
0.1
1
10
100
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
I
F
– LED FORWARD CURRENT (mA)
Figure 5. Resistive Non-Linearity vs. D.C. Bias
5
4
3
2
I
= 10μA RMS
4-6
r(on) = 200Ω
1
0
1
50
100
150
200
250
300
350
V
4-6
– D.C. BIAS VOLTAGE (mV)
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
5
Typical Applications
As a Variable Resistor
As an Analog Signal Switch
ISOLATED SAMPLE AND HOLD CIRCUIT
ISOLATED VARIABLE ATTENUATORS
500K
+
-
VIN
VOUT
VOUT
VIN
VIN
50
VIN
IF
VOUT
H11F1M
H11F1M
H11F1M
C
IF
VOUT
IF
LOW FREQUENCY
t
IF
HIGH FREQUENCY
DYNAMIC RANGE 70db
FOR 0 ≤ IF ≤ 30mA
DYNAMIC RANGE 50db
@1MHz
@10KHz
FOR 0 ≤ IF ≤ 30mA
Accuracy and range are improved over conventional FET
switches because the H11FXM has no charge injection from
the control signal. The H11FXM also provides switching of
either polarity input signal up to 30V mag.nitude.
Distortion free attenuation of low level A.C. signals is accom-
plished by varying the IRED current, I Note the wide dynamic
F
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
AUTOMATIC GAIN CONTROL
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
CALL V1
H11F1M
CALL
Vn
DATA
VOUT
VIN
ACQUISITION
V1
V2
H74A1
+
-
MSB
LSB
MSB
LSB
A/D
CONVERTER
PROCESS
CONTROL
LOGIC
Vn
H74A1
H11F1M
IF
SYSTEM
500K
H11F1M
AGC
SIGNAL
This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.
The optical isolation, linearity and low offset voltage of the
H11FXM allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
TEST EQUIPMENT - KELVIN CONTACT POLARITY
IF1
IF2
H11F1M
H11F1M
H11F1M
H11F1M
IF
IF
A
C
ITEST
DEVICE
UNDER
TEST
I
F TO
A1
A2
A & B FOR
POLARITY 1
A3
PARAMETER
SENSING
BOARD
C & D FOR
POLARITY 2
B
D
IF
IF
H11F1M
H11F1M
IF1 ADJUSTS f1, IF2 ADJUSTS f2
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11FXM eliminates these troubles while providing
faster switching.
The linearity of resistance and the low offset voltage of the
H11FXM allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1M IRED’s
controlling the filter’s transfer characteristic.
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
6
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
7
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
H11F1M
H11F1SM
Standard Through Hole Device
S
SR2
V
Surface Mount Lead Bend
H11F1SR2M
H11F1VM
Surface Mount; Tape and Reel
IEC60747-5-2 approval
TV
H11F1TVM
H11F1SVM
H11F1SR2VM
IEC60747-5-2 approval, 0.4" Lead Spacing
IEC60747-5-2 approval, Surface Mount
IEC60747-5-2 approval, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
H11F1
6
V X YY Q
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
8
Carrier Tape Specification
12.0 0.1
2.0 0.05
4.5 0.20
Ø1.5 MIN
1.75 0.10
0.30 0.05
4.0 0.1
11.5 1.0
24.0 0.3
9.1 0.20
21.0 0.1
Ø1.5 0.1/-0
10.1 0.20
User Direction of Feed
0.1 MAX
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
9
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
10
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
11
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