MCT6-SMT&R [ISOCOM]
Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURAFCE MOUNT, PLASTIC, DIP-8;型号: | MCT6-SMT&R |
厂家: | ISOCOM COMPONENTS |
描述: | Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURAFCE MOUNT, PLASTIC, DIP-8 输出元件 |
文件: | 总3页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCT6, MCT61, MCT62, MCT66
MCT6X, MCT61X, MCT62X, MCT66X
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
Dimensions in mm
2.54
z
ULrecognised,FileNo.E91231
Package Code " FF "
1
2
3
4
8
7
7.0
6.0
'X'SPECIFICATIONAPPROVALS
6
5
1.2
3.0
z
VDE0884in3availableleadform:-
10.16
9.16
7.62
-STD
4.0
3.0
-Gform
-SMDapprovedtoCECC00802
13°
Max
0.5
DESCRIPTION
0.26
3.35
0.5
TheMCT6,MCT61,MCT62&MCT66series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-40°Cto+125°C
-25°Cto+100°C
FEATURES
z
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
z
HighIsolationVoltage(5.3kVRMS
)
ForwardCurrent
ReverseVoltage
Power Dissipation
50mA
6V
70mW
APPLICATIONS
z
z
z
z
Computerterminals
Industrial systems controllers
Measuring instruments
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Emitter-collectorVoltageBVECO
CollectorCurrent
30V
6V
50mA
150mW
Signal transmission between systems of
different potentials and impedances
Power Dissipation
OPTION G
OPTION SM
SURFACEMOUNT
POWERDISSIPATION
7.62
Total Power Dissipation
170mW
(deratelinearly2.67mW/°Cabove25°C)
0.6
0.1
1.25
0.75
0.26
10.46
9.86
10.16
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS251UD
Tel:(01429)863609 Fax:(01429)863581
17/7/08
DB92012
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
ForwardVoltage(VF)
1.5
10
V
IF =20mA
ReverseCurrent(IR)
μA
VR =3V
Output
Collector-emitterBreakdown(BVCEO
)
30
6
V
V
IC = 1mA (note 2)
IE =100μA
VCE =10V
Emitter-collectorBreakdown(BVECO
)
Collector-emitterDarkCurrent(ICEO
)
100 nA
Coupled CurrentTransferRatio(CTR)(Note2)
MCT6
MCT61
MCT62
20
50
100
%
%
%
10mAIF,10VVCE
5mAIF,5VVCE
5mA IF , 5V VCE
MCT66
6
%
10mAIF,10VVCE
Collector-emitterSaturationVoltageVCESAT
MCT6,61,62
0.4
0.4
V
V
VRMS
16mAIF,2mAIC
40mAIF,2mAIC
See note 1
MCT66
Input to Output Isolation Voltage VISO
5300
Input-output Isolation Resistance RISO 5x1010
Ω
VIO =500V(note1)
Output Rise Time, tr
OutputFallTime, tf
4
3
μs
μs
IC =2mA,VCE=2V,
RL =100Ω(Fig.1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIG. 1
INPUT
toff
ton
tr
tf
OUTPUT
10%
90%
10%
90%
DB92012m-AAS/A4
17/7/08
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
TA = 25°C
50
40
30
20
150
100
50
30
20
15
10
50
0
10
0
IF = 5mA
0
2
4
6
8
10
-30
0
25
50
75
100 125
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
60
50
1.4
1.2
40
30
1.0
0.8
0.6
0.4
20
10
0
V
= 10V
TACE= 25°C
0.2
0
-30
0
25
50
75
100 125
1
2
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
0.28
1.5
1.0
0.24
0.20
IF = 10mA
I = 16mA
IFC = 2mA
V
CE = 10V
0.16
0.12
0.08
0.5
0
0.04
0
-30
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
DB92012m-AAS/A4
17/7/08
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