IS31AP2145B [ISSI]
2.7W@5.0V MONO CLIP-LESS & FILTER-LESS CLASS-D; 2.7W@5.0V MONO CLIP - LESS和无滤波器D类
| 型号： | IS31AP2145B |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 2.7W@5.0V MONO CLIP-LESS & FILTER-LESS CLASS-D |
| 文件： | 总14页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS31AP2145B
2.7W@5.0V MONO CLIP-LESS & FILTER-LESS CLASS-D
AUDIO POWER AMPLIFIER
Preliminary Information
May 2012
GENERAL DESCRIPTION
FEATURES
The IS31AP2145B is a 2.7W@5.0V mono, clip-less,
filter-less, high efficiency Class-D audio power
amplifier with automatic gain control.
Filter-less Class-D architecture
AGC enable/disable function
2.7W into 4Ω at 5.0V (10% THD+N)
Power supply range: 2.7V to 5.5V
Selectable attack and release times
Minimum external components
High efficiency: 90%
The IS31AP2145B integrates AGC (Automatic Gain
Control) function to automatically prevent distortion of
the audio signal by which we can enhance audio
quality and also protect the speaker from damage at
high power levels. The AGC function and its attack
time/release time are selectable via the CTRL pin. The
IS31AP2145B also provides thermal and over current
protection functions.
Click-and-pop suppression
Low shutdown current: 0.1μA
Short-circuit and thermal protection
Space-saving UTQFN-9, 1.5mm × 1.5mm
In addition to these features, 90% high efficiency,
improved RF-rectification immunity, a fast start-up time
and small package size make IS31AP2145B ideal
choice for cellular handsets, PDAs and other portable
applications.
APPLICATIONS
Wireless or cellular handsets and PDAs
Portable navigation devices
Portable DVD player
Notebook PC
Educational toys
USB speakers
IS31AP2145B is available in a 1.5mm×1.5mm
UTQFN-9 package.
Portable gaming
TYPICAL APPLICATION CIRCUIT
Figure 1 Typical Application Circuit (Differential Input)
Integrated Silicon Solution, Inc. – www.issi.com
Rev.0A, 05/14/2012
1
IS31AP2145B
VBattery
A2
B2
VCC
IN+
VREF
1 F
1 F
0.1 F
C
33nF
IN
A3
A1
C1
OUT+
OUT-
GND
Single-ended In
IS31AP2145B
IN-
C3
C
33nF
IN
R
R
1
2
C2
CTRL1
CTRL2
CTRL
B1,B3
0.1 F
R
3
Figure 2 Typical Application Circuit (Single-Ended Input)
Integrated Silicon Solution, Inc. – www.issi.com
2
Rev.0A, 05/14/2012
IS31AP2145B
PIN CONFIGURATION
Package
Pin Configuration (Top View)
UTQFN-9
PIN DESCRIPTION
No.
Pin
Description
A1
IN+
Positive input terminal.
Power supply.
A2
VCC
OUT+
GND
VREF
IN-
A3
Positive output terminal.
Ground.
B1, B3
B2
Analog reference power supply terminal.
Negative input terminal.
Power down and AGC control terminal.
Negative output terminal.
C1
C2
CTRL
OUT-
C3
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
3
Rev.0A, 05/14/2012
IS31AP2145B
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Order Part No.
Package
QTY/Reel
3000
IS31AP2145B-UTLS2-TR
UTQFN-9, Lead-free
Integrated Silicon Solution, Inc. – www.issi.com
4
Rev.0A, 05/14/2012
IS31AP2145B
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
Supply voltage, VCC
Voltage at any input pin
Maximum junction temperature, TJMAX
Storage temperature range, TSTG
Operating temperature range, TA
-0.3V ~ +6.0V
-0.3V ~ VCC+0.3V
150°C
-65°C ~ +150°C
−40°C ~ +85°C
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = -40°C ~ +85°C, VCC = 2.7V ~ 5.5V, unless otherwise noted. Typical value are VCC = 3.6V, TA = +25°C.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
VCC
ICC
ISD
Supply voltage
2.7
5.5
V
Quiescent current
Shutdown current
Switching frequency
2
mA
μA
VCTRL = 0V
VCC = 2.7V ~ 5.5V
0.1
300
18
fSW
kHz
dB
Gain Audio input gain
AGC Characteristics
VAGC1 AGC1 mode setting threshold voltage
VAGC2 AGC2 mode setting threshold voltage
VOFF AGC OFF mode setting threshold voltage
1.4
0.8
0.36
0
VCC
1.05
0.6
V
V
V
VSD
tAT1
tRT1
tAT2
tRT2
Shutdown mode setting threshold voltage
Attack time 1
0.14
V
45
2.6
10
ms
s
Release time 1
Attack time 2
ms
s
Release time
1.2
-10
AMAX Maximum attenuation gain
dB
Integrated Silicon Solution, Inc. – www.issi.com
5
Rev.0A, 05/14/2012
IS31AP2145B
ELECTRICAL CHARACTERISTICS
AGC off, TA = +25°C, VCC = 3.6V, unless otherwise noted.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
THD+N = 10%，f = 1kHz
RL = 4Ω+33µH
VCC = 5.0V
VCC = 5.0V
VCC = 5.0V
VCC = 5.0V
2.7
W
THD+N = 1%，f = 1kHz
RL = 4Ω+33µH
2.0
1.63
1.30
0.2
W
W
W
PO
Output power
THD+N = 10%，f = 1kHz
RL =8Ω +33µH
THD+N = 1%，f = 1kHz
RL = 8Ω+33µH
VCC = 3.6V, PO = 0.5W, RL = 8Ω+33µH
f = 1kHz
Total harmonic
distortion plus noise
THD+N
PSRR
%
VCC = 3.6V, PO = 1.0W, RL = 4Ω+33µH
f = 1kHz
0.5
V
P-P = 200mV，RL = 8Ω，f = 217Hz
-67
-63
90
dB
dB
%
Power supply
rejection ratio
VP-P = 200mV，RL = 8Ω，f = 1kHz
η
Maximum efficiency PO = 1.0W，RL = 8Ω+33µH，f = 1kHz
tST
Start-up time
34
ms
ms
ms
ms
tWK
tSD
Wake-up time
40
80
Shutdown time
Mode switching time
tMOD
0.1
Integrated Silicon Solution, Inc. – www.issi.com
6
Rev.0A, 05/14/2012
IS31AP2145B
TYPICAL PERFORMANCE CHARACTERISTICS
20
20
10
5
R
L
= 4Ω+33µH
R
L
= 8Ω+33µH
10
5
f = 1kHz
f = 1kHz
V
CC = 3.6V
V
CC = 3.6V
2
1
2
1
V
CC = 4.2V
V
CC = 4.2V
0.5
0.5
0.2
0.1
0.2
0.1
VCC = 5.0V
V
CC = 5.0V
10m
20m
50m 100m 200m
500m
1
2
3
10m 20m
50m
100m 200m
500m
1
2
3
4
Output Power(W)
Output Power(W)
Figure 3 THD+N vs. Output Power
Figure 4 THD+N vs. Output Power
20
10
20
10
V
CC = 3.6V
= 0.9W
= 4Ω+33µH
V
CC = 3.6V
= 500mW
= 8Ω+33µH
PO
P
O
5
R
L
RL
5
2
1
2
1
0.2
0.1
0.2
0.1
0.05
0.05
0.02
0.01
0.02
0.01
20
50
100 200
500 1k
2k
5k
10k 20k
20
50
100 200
500 1k
2k
5k
10k 20k
Frequency(Hz)
Frequency(Hz)
Figure 5 THD+N vs. Frequency
Figure 6 THD+N vs. Frequency
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
CC = 3.6V~5.0V
= 8Ω+33μH
V
CC = 3.6V~5.0V
= 4Ω+33μH
RL
RL
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Output Power(W)
Output Power(W)
Figure 7 Efficiency vs. Output Power
Figure 8 Efficiency vs. Output Power
Integrated Silicon Solution, Inc. – www.issi.com
7
Rev.0A, 05/14/2012
IS31AP2145B
1.8
1.4
1.2
1
R
L
= 8Ω+33µH
RL
= 8Ω+33µH
1.6
1.4
1.2
1
AGC OFF
AGC1
THD+N = 10%
THD+N = 10%
0.8
0.6
0.4
0.8
0.6
0.4
THD+N = 1%
THD+N = 1%
0.2
0
0.2
0
2.5
3
3.5
4
4.5
5
2.5
3
3.5
4
4.5
5
Supply Voltage(V)
Supply Voltage(V)
Figure 9 Output Power vs. Supply Voltage
Figure 10 Output Power vs. Supply Voltage
3
2.5
2
2
1.8
1.6
R
L
= 4Ω+33µH
R
AGC1
L
= 4Ω+33µH
AGC OFF
THD+N = 10%
1.4
1.2
1
THD+N = 10%
1.5
1
THD+N = 1%
0.8
0.6
0.4
THD+N = 1%
0.5
0
0.2
0
2.5
3
3.5
4
4.5
5
2.5
3
3.5
4
4.5
5
Supply Voltage(V)
Supply Voltage(V)
Figure 11 Output Power vs. Supply Voltage
Figure 12 Output Power vs. Supply Voltage
+0
V
CC = 3.6V, 4.2V
= 8Ω+33μH
R
L
-20
-40
-60
-80
-100
-120
20
50
100 200
500
1k
2k
5k
10k 20k
Frequency(Hz)
Figure 13 PSRR vs. Frequency
Integrated Silicon Solution, Inc. – www.issi.com
8
Rev.0A, 05/14/2012
IS31AP2145B
FUNCTIONAL BLOCK DIAGRAM
VCC
VREF
OTP
OCP
Internal
Oscillator
RIN
28.5k
OUT+
OUT-
IN-
PWM
AGC
H-Bridge
IN+
RIN
28.5k
Control
Logic
CTRL
Bias
GND
Integrated Silicon Solution, Inc. – www.issi.com
9
Rev.0A, 05/14/2012
IS31AP2145B
APPLICATION INFORMATION
DIGITAL AMPLIFIER
AGC (AUTOMATIC GAIN CONTROL) CONTROL
FUNCTION
The IS31AP2145B is a 2.7W@5.0V mono, clip-less,
filter-less, high efficiency Class-D audio power
amplifier with automatic gain control.
This is the function to control the output in order to
obtain a maximum output level without distortion when
an excessive input is applied which would otherwise
cause clipping at the differential signal output. That is,
with the AGC function, IS31AP2145B lowers the gain
of the digital amplifier to an appropriate value so as not
to cause clipping at the differential signal output
(Figure 14).
The IS31AP2145B integrates AGC (Automatic Gain
Control) function to automatically prevent distortion of
the audio signal by which we can enhance audio
quality and also protect speaker from damage at high
power levels. In addition, IS31AP2145B has been
designed so that high-efficiency can be maintained
within an average power range that is used for mobile
terminal.
Figure 14 Operation of AGC Function
Integrated Silicon Solution, Inc. – www.issi.com
10
Rev.0A, 05/14/2012
IS31AP2145B
The attack time and the release time of AGC control
have two levels (refer to Table 1). They are selected by
the voltage at the CTRL terminal (refer to Table 2). The
attack time is a time interval that gain falls from 18dB
to 10dB with a big signal input enough. And the release
time is a time from target attenuation to no AGC
attenuation.
Table 2 Mode Setting
CTRL1
CTRL2
Mode
H
H
AGC1
AGC2
H
GND
H
GND
GND
AGC OFF
Shutdown
Table 1 Attack Time and Release Time
GND
“H” level indicates a microcomputer’s I/O port H level
output voltage that is input to CTRL1 and CTRL2
terminals and GND indicates GND of the
microcomputer.
AGC Mode
Attack Time
Release Time
AGC1
(Recommended)
45ms
10ms
2.6s
1.2s
AGC2
GND level of the microcomputer must be the same as
that of IS31AP2145B.
Assuming no limitation by the power supply, the audio
output signal would be as in Figure 15.
The control of CTRL terminal is based on I/O port H
level output voltage of microcomputer that is
connected.
Set resistance constants according to I/O port H level
output voltage of each microcomputer as Table 3
below.
Figure 15 Assuming no Restriction from Power Supply, the Audio
Output Signal
In normal operation without the AGC, the output is
distorted because of the restriction from power supply,
as shown in Figure 16.
Table 3 Resistors Setting
VI/O 1.8V 2.6V 2.8V 3.0V 3.3V
5.0V
R1 27kꢀ 33kꢀ 33kꢀ 33kꢀ 33kꢀ 56kꢀ
R2 56kꢀ 68kꢀ 68kꢀ 68kꢀ 68kꢀ 120kꢀ
R3 82kꢀ 27kꢀ 24kꢀ 22kꢀ 18kꢀ 15kꢀ
Functions of CTRL pin are designed with their control
by two control pins (CTRL1 and CTRL3). Only a
switching control between AGC1 Mode and Shutdown
Mode is available when a single control terminal is
used (Table 4 and Figure 19).
Figure 16 AGC Function Off
With the AGC function of IS31AP2145B, the optimum
output power can be obtained along with the minimal
distortion. The Figure 17 shows the outcome of AGC
function.
Attack Time
Figure 17 AGC Function On
Release Time
Figure 19 AGC1 Mode Circuit
CTRL TERMINAL FUNCTION
Table 4 Mode Setting
By setting the threshold voltage of each mode to CTRL
terminal, the followings can be set: AGC1, AGC2, AGC
OFF, and Shutdown Mode (Table 2 and Figure 18).
CTRL1
Mode
H
AGC1
GND
Shutdown
SYSTEM TIMING
The CTRL terminal should be configured as the Figure
20. When in the Shutdown Mode, the level of the
terminal must not be changed from GND level during
tSD. When the IS31AP2145B wakes up, the CTRL
terminal must be set to H level first, then enter the
setting mode.
Figure 18 AGC Function Mode Setting
Integrated Silicon Solution, Inc. – www.issi.com
11
Rev.0A, 05/14/2012
IS31AP2145B
Figure 20 System Timing
INPUT CAPACITORS (CIN)
DECOUPLING CAPACITOR (CS)
The input capacitors (CIN) and internal resistor (RIN =
28.5kꢀ) form a high-pass filter with the corner
frequency, fC, determined in Equation (1).
The IS31AP2145B is a high performance class-D
audio amplifier that requires adequate power supply
decoupling to ensure the efficiency is high and total
harmonic distortion (THD) is low. For higher frequency
transients, spikes, or digital hash on the line, a good
low equivalent-series-resistance (ESR) ceramic
capacitor, typically 0.1μF, placed as close as possible
to the device VCC lead works best. Placing this
decoupling capacitor close to the IS31AP2145B is very
important for the efficiency of the class-D amplifier,
because any resistance or inductance in the trace
between the device and the capacitor can cause a loss
in efficiency. For filtering lower frequency noise signals,
a 1μF or greater capacitor placed near the audio power
amplifier would also help.
1
(1)
f
c
2RIN CIN
For example, in figure 1,
CIN = 33nF, RIN = 28.5kꢀ,
1
So,
f
169Hz
c
2 28.5k 33nF
The capacitors should have a tolerance of 10% or
better, because any mismatch in capacitance causes
an impedance mismatch at the corner frequency and
below.
Integrated Silicon Solution, Inc. – www.issi.com
12
Rev.0A, 05/14/2012
IS31AP2145B
CLASSIFICATION REFLOW PROFILES
Profile Feature
Pb-Free Assembly
Preheat & Soak
150°C
200°C
60-120 seconds
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
217°C
60-150 seconds
Peak package body temperature (Tp)*
Max 260°C
Time (tp)** within 5°C of the specified
classification temperature (Tc)
Max 30 seconds
Average ramp-down rate (Tp to Tsmax)
Time 25°C to peak temperature
6°C/second max.
8 minutes max.
Figure 21 Classification Profile
Integrated Silicon Solution, Inc. – www.issi.com
13
Rev.0A, 05/14/2012
IS31AP2145B
PACKAGING INFORMATION
UTQFN-9
Note: All dimensions in millimeters unless otherwise stated.
Integrated Silicon Solution, Inc. – www.issi.com
14
Rev.0A, 05/14/2012
相关型号：
©2020 ICPDF网 联系我们和版权申明