IS62C10248AL-55TLI [ISSI]
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM; 1M ×8低电压，超低功耗CMOS静态RAM
| 型号： | IS62C10248AL-55TLI |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 文件： | 总14页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS62C10248AL
IS65C10248AL
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
PRELIMINARY INFORMATION
OCTOBER 2009
FEATURES
DESCRIPTION
Theꢀ ISSIꢀ IS62C10248AL/IS65C10248ALꢀ areꢀ ꢀ high-
speed,ꢀ 8Mꢀ bitꢀ staticꢀ RAMsꢀ organizedꢀ asꢀ 1Mꢀ wordsꢀ byꢀ
8ꢀ bits.ꢀ Itꢀ isꢀ fabricatedꢀ usingꢀ ISSI'sꢀ high-performanceꢀ
CMOSꢀtechnology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀ
withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-
performance and low power consumption devices.
•ꢀ High-speedꢀaccessꢀtime:ꢀ45ns,ꢀ55ns
•ꢀ CMOSꢀlowꢀpowerꢀoperation
– 36 mW (typical) operating
ꢀ –ꢀ12ꢀµWꢀ(typical)ꢀCMOSꢀstandby
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels
•ꢀ Singleꢀpowerꢀsupplyꢀꢀ
When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOW
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOSꢀinputꢀlevels.
ꢀ –ꢀ4.5V--5.5VꢀVdd
Easy memory expansion is provided by using Chip Enable
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ
(WE) controls both writing and reading of the memory.
•ꢀ Threeꢀstateꢀoutputs
•ꢀ Automotiveꢀtemperatureꢀ(-40oC to +125oC)
TheꢀIS62C10248ALꢀandꢀIS65C10248ALꢀareꢀpackagedꢀinꢀ
theꢀJEDECꢀstandardꢀ48-pinꢀminiꢀBGAꢀ(9mmꢀxꢀ11mm)ꢀandꢀ
44-PinꢀTSOPꢀ(TYPEꢀII).
•ꢀ Lead-freeꢀavailable
FUNCTIONAL BLOCK DIAGRAM
1M x 8
MEMORY ARRAY
A0-A19
DECODER
VDD
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CS2
CS1
OE
CONTROL
CIRCUIT
WE
Copyright © 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
PIN CONFIGURATION (1M x 8 Low Power)
48-pin mini BGA (B) (9mm x 11mm)
44-pin TSOP (Type II)
1
2
3
4
5
6
A4
A3
A2
A1
A0
CS1
NC
NC
I/O0
I/O1
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
2
A
A
A
2
NC
NC
OE
CS
2
0
1
3
A
B
C
D
E
F
4
OE
CS2
A8
NC
NC
I/O7
I/O6
GND
5
A
NC
NC
A
CS1
NC
4
6
3
6
7
I/O
A
A
A
NC
I/O
4
0
5
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
A
17
I/O
I/O
5
V
V
DD
7
1
V
DD
GND
I/O2
I/O3
NC
VDD
V
DD
I/O
6
I/O
NC
A
16
SS
2
I/O5
I/O4
NC
NC
A9
A10
A11
A12
A13
A14
I/O
A
NC
NC
NC
A
I/O
7
3
14
15
NC
WE
A19
A18
A17
A16
A15
A
12
A
A
NC
13
WE
NC
G
H
A
A
A
A
A
19
18
8
9
10
11
PIN DESCRIPTIONS
A0-A19ꢀ ꢀ
CS1
AddressꢀInputs
Chip Enable 1 Input
Chip Enable 2 Input
OutputꢀEnableꢀInput
Write Enable Input
Input/Output
CS2
OEꢀꢀ
ꢀ
WE
I/O0-I/O7ꢀ
NC
No Connection
Power
Vddꢀ
ꢀ
ꢀ
GNDꢀ
Ground
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
TRUTH TABLE
Mode
WE
CS1
CS2
OE
I/O Operation Vdd Current
NotꢀSelectedꢀ
(Power-down)ꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
ꢀ
ꢀ
High-Zꢀꢀꢀ
High-Z
isb1, isb2
isb1, isb2
ꢀ
ꢀ
ꢀ
OutputꢀDisabledꢀ Hꢀ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Lꢀ
Xꢀ
ꢀ
High-Zꢀ
dout
din
iCC
iCC
iCC
Readꢀ
Writeꢀ
Hꢀ
Lꢀ
OPERATING RANGE (Vdd)
Range
Ambient Temperature
0°Cꢀtoꢀ+70°Cꢀ
Vdd
Speed
Commercialꢀ
Industrialꢀ
4.5Vꢀ-ꢀ5.5Vꢀ
4.5Vꢀ-ꢀ5.5Vꢀ
4.5Vꢀ-ꢀ5.5Vꢀ
45ns
55ns
55ns
–40°Cꢀtoꢀ+85°Cꢀ
–40°Cꢀtoꢀ+125°Cꢀ
ꢀ Automotiveꢀ
CAPACITANCE(1,2)
Symbol
Parameter
Input Capacitance
OutputꢀCapacitanceꢀ
Conditions
Max.
Unit
pF
Cin
Vin = 0V
5
7
Coutꢀ
Vout = 0V
pF
Notes:
1.ꢀꢀTestedꢀinitiallyꢀandꢀafterꢀanyꢀdesignꢀorꢀprocessꢀchangesꢀthatꢀmayꢀaffectꢀtheseꢀparameters.
2.ꢀ Testꢀconditions:ꢀTa = 25°C, fꢀ=ꢀ1ꢀMHz,ꢀVddꢀ=ꢀ5.0V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
–0.5ꢀtoꢀ+7.0ꢀ
–65ꢀtoꢀ+150ꢀ
1.5ꢀ
Unit
V
°C
Vterm
tstg
Pt
TerminalꢀVoltageꢀwithꢀRespectꢀtoꢀGNDꢀ
StorageꢀTemperatureꢀ
PowerꢀDissipationꢀ
W
ioutꢀ
DCꢀOutputꢀCurrentꢀ(LOW)ꢀ
20ꢀ
mAꢀ
Notes:
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀ
permanentꢀdamageꢀtoꢀtheꢀdevice.ꢀThisꢀisꢀaꢀstressꢀratingꢀonlyꢀandꢀfunctionalꢀoperationꢀ
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)
Symbol Parameter
Test Conditions
Min.
2.4ꢀ
—ꢀ
Max.
—ꢀ
Unit
V
Voh
Vol
Vih
Vil
ili
OutputꢀHIGHꢀVoltageꢀ
Vdd = Min.,ꢀioh = –1ꢀmAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
OutputꢀLOWꢀVoltageꢀ
InputꢀHIGHꢀVoltageꢀ
InputꢀLOWꢀVoltage(1)
InputꢀLeakageꢀ
Vdd = Min.,ꢀiol = 2.1ꢀmAꢀ
0.4ꢀ
V
ꢀ
2.2ꢀ
–0.3ꢀ
Vdd + 0.5
0.8ꢀ
V
ꢀ
V
GNDꢀ≤ Vin ≤ Vdd
Com.
Ind.
Auto.
–1
–2
–5
1
2
5
µA
ilo
ꢀ
OutputꢀLeakage
ꢀ
GNDꢀ≤ Vout ≤ Vdd
OutputsꢀDisabledꢀ
Com.
Ind.ꢀ
Auto.
–1
–2ꢀ
–5
1
2
5
µA
ꢀ
Note:
1. Vil (min) = -0.3V DC; Vil (min) = -2.0VꢀACꢀ(pulseꢀwidthꢀ-2.0ꢀns).ꢀNotꢀ100%ꢀtested.ꢀ
Vih (max) = Vdd + 0.3V DC; Vih (max) = Vdd + 2.0VꢀACꢀ(pulseꢀwidthꢀ-2.0ꢀns).ꢀNotꢀ100%ꢀtested.ꢀ
4ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
AC TEST CONDITIONS
Parameter
InputꢀPulseꢀLevelꢀ
InputꢀRiseꢀandꢀFallꢀTimesꢀ
Unit
0Vꢀtoꢀ3.0V
5ꢀns
ꢀ
ꢀ
ꢀ
InputꢀandꢀOutputꢀTimingꢀ
andꢀReferenceꢀLevel
1.5V
ꢀ
OutputꢀLoadꢀ
SeeꢀFiguresꢀ1ꢀandꢀ2
AC TEST LOADS
481 Ω
481 Ω
5V
5V
OUTPUT
OUTPUT
255 Ω
255 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
-45 ns
-55 ns
Symbol Parameter
Test Conditions
dd = Max.,ꢀCS1 = Vil, CS2ꢀ=ꢀVih
out = 0 mA
in = Vih or Vil
Min. Max. Min. Max. Unit
iCC
VddꢀDynamicꢀOperating
Com.
Ind.
—
25
mA
V
Supply Current
—
—
25
i
Auto.
typ(2)
40
V
13
12
f = fmax
iCC1
Isb1
Isb2
Com.
Ind.
—
—
—
10
1
mA
mA
µA
Average operating
Current
CS1 = Vil, Cs2 = Vih
i i/o = 0 mA
—
—
10
20
Auto.
Com.
Ind.
V
V
V
in = Vih or Vil
TTLꢀStandbyꢀCurrent
(TTLꢀInputs)
dd = Max.,ꢀCS1 ≥ Vih, CS2 ≤ꢀVil
in = Vih or Vil
—
—
1.5
2
Auto.
Com.
Ind.
f = 0
Vdd = Max.,ꢀ
40
CMOSꢀStandby
—
—
60
Currentꢀ(CMOSꢀInputs) CS1≥ Vdd – 0.2V and CS2 ≤ Vss + 0.2V
in ≥ Vdd – 0.2V or Vin ≤ Vss + 0.2V
f = 0
Auto.
typ(2)
180
V
15
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
ꢀꢀꢀꢀꢀ2.ꢀꢀTypicalꢀValuesꢀareꢀmeasuredꢀatꢀVccꢀ=ꢀ5V,ꢀTa = 25oCꢀandꢀnotꢀ100%ꢀtested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
45 ns
55 ns
Symbol
trCꢀ
Parameter
Min.
Max.
—ꢀ
Min.
55ꢀ
—ꢀ
10ꢀ
—ꢀ
—ꢀ
—ꢀ
5ꢀ
Max.
—ꢀ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ReadꢀCycleꢀTimeꢀ
45ꢀ
—ꢀ
10ꢀ
—ꢀ
—ꢀ
—ꢀ
5ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
taaꢀ
AddressꢀAccessꢀTimeꢀ
OutputꢀHoldꢀTimeꢀ
45ꢀ
—ꢀ
55ꢀ
—ꢀ
tohaꢀ
taCs1/taCs2
tdoe
CS1/CS2ꢀAccessꢀTimeꢀ
OEꢀAccessꢀTimeꢀ
45ꢀ
20ꢀ
15ꢀ
—ꢀ
55ꢀ
25ꢀ
20ꢀ
—ꢀ
(2)
thzoe
OEꢀtoꢀHigh-ZꢀOutputꢀ
OEꢀtoꢀLow-ZꢀOutputꢀ
CS1/CS2ꢀtoꢀHigh-ZꢀOutputꢀ
CS1/CS2ꢀtoꢀLow-ZꢀOutputꢀ
(2)
tlzoe
(2)
thzCs1/thzCs2
0ꢀ
15ꢀ
—ꢀ
0ꢀ
20ꢀ
—ꢀ
(2)
tlzCs1/tlzCs2
10ꢀ
10ꢀ
Notes:
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0Vꢀtoꢀ3.0Vꢀ
and output loading specified in Figure 1.
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OEꢀ=ꢀVil, Cs2 = WEꢀ=ꢀVih)
t
RC
ADDRESS
DOUT
t
AA
t
OHA
tOHA
DATA VALID
PREVIOUS DATA VALID
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
7
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CS1, CS2, AND OE Controlled)
t
RC
ADDRESS
OE
t
AA
t
OHA
tHZOE
t
DOE
t
LZOE
CS1
t
ACS1/tACS2
CS2
tLZCS1/
tLZCS2
t
HZCS
HIGH-Z
DOUT
DATA VALID
Notes:
1. WEꢀisꢀHIGHꢀforꢀaꢀReadꢀCycle.
2.ꢀ Theꢀdeviceꢀisꢀcontinuouslyꢀselected.ꢀOE, CS1 = Vil. Cs2=WE=Vih.
3. Address is valid prior to or coincident with CS1ꢀLOWꢀandꢀCS2ꢀHIGHꢀtransition.
8ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
ꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀ
IS62C10248AL, IS65C10248AL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)ꢀ(OverꢀOperatingꢀRange)
45ns
55 ns
Symbol
Parameter
Min. Max.
Min.
55ꢀ
45ꢀ
45ꢀ
0ꢀ
Max.
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
20ꢀ
—ꢀ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
twCꢀ
WriteꢀCycleꢀTimeꢀ
ꢀꢀꢀ45ꢀꢀ
ꢀꢀꢀ35ꢀ
ꢀꢀꢀ35ꢀ
ꢀꢀꢀ0ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
20ꢀ
—ꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀ
ꢀꢀꢀ
tsCs1/tsCs2 CS1/CS2ꢀtoꢀWriteꢀEndꢀ
ꢀꢀꢀꢀ
tawꢀ
thaꢀ
tsaꢀ
tPwe
tsdꢀ
thdꢀ
AddressꢀSetupꢀTimeꢀtoꢀWriteꢀEndꢀꢀ
ꢀꢀꢀꢀ
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ
AddressꢀSetupꢀTimeꢀ
ꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀ0ꢀ
0ꢀ
(4)
WEꢀPulseꢀWidthꢀ
ꢀꢀꢀ35ꢀ
ꢀꢀꢀ25ꢀ
ꢀꢀꢀ0ꢀ
40ꢀ
30ꢀ
0ꢀ
DataꢀSetupꢀtoꢀWriteꢀEndꢀ
DataꢀHoldꢀfromꢀWriteꢀEndꢀ
WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ
WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ
ꢀꢀꢀꢀ
(3)
thzwe
tlzwe
ꢀꢀꢀ—ꢀ
ꢀꢀꢀꢀ5ꢀ
ꢀꢀꢀꢀ
ꢀꢀꢀꢀ
—ꢀ
5ꢀ
(3)
Notes:
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0Vꢀtoꢀ3.0Vꢀ
and output loading specified in Figure 1.
2. Theꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀof CS1 LOW,ꢀCS2ꢀHIGH,ꢀandꢀWEꢀLOW.ꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀinitiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀ
go inactive to terminateꢀtheꢀWrite.ꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀrisingꢀorꢀfallingꢀedgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀwrite.
3.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.
4.ꢀꢀꢀtPwe > thzwe + tsd when OEꢀisꢀLOW.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OEꢀ=ꢀHIGHꢀorꢀLOW)
t
WC
ADDRESS
CS1
t
HA
tSCS1
tSCS2
CS2
tAW
t
PWE
WE
DOUT
DIN
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DATA UNDEFINED
t
t
HD
DATA-IN VALID
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
9
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
WRITE CYCLE NO. 2 (WEꢀControlled:ꢀOEꢀisꢀHIGHꢀDuringꢀWriteꢀCycle)
t
WC
ADDRESS
OE
t
HA
tSCS1
CS1
tSCS2
CS2
tAW
t
PWE
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
t
HD
DATA-IN VALID
WRITE CYCLE NO. 3 (WEꢀControlled:ꢀOEꢀisꢀLOWꢀDuringꢀWriteꢀCycle)
t
WC
ADDRESS
OE
t
HA
tSCS1
CS1
tSCS2
CS2
tAW
t
PWE
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
t
HD
DATA-IN VALID
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
DATA RETENTION SWITCHING CHARACTERISTICS (4.5V - 5.5V)
Symbol
ꢀ ꢀ Vdrꢀ
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
VddꢀforꢀDataꢀRetentionꢀ
DataꢀRetentionꢀCurrentꢀ
SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
2.0ꢀ
ꢀ
5.5ꢀ
V
idrꢀ
Vddꢀ=ꢀ2.0Vꢀandꢀꢀ
ꢀ
Com.ꢀ
Ind.ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
ꢀ
20ꢀ
40ꢀ
60ꢀ
µAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
CS1 ≥ꢀVdd –ꢀ0.2Vꢀandꢀꢀꢀ
(a) CS2 ≥ꢀVdd –ꢀ0.2Vꢀorꢀꢀ
(b) CS2 ≤ꢀGNDꢀ+ꢀ0.2Vꢀ
15ꢀ
—ꢀ
—ꢀ
Auto.ꢀ
180
tsdr
trdr
DataꢀRetentionꢀSetupꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
RecoveryꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
ꢀ
0ꢀ
ꢀ
ꢀ
—ꢀ
—ꢀ
ns
ns
trCꢀ
Note:
1.ꢀꢀTypicalꢀValuesꢀareꢀmeasuredꢀatꢀVccꢀ=ꢀ5V,ꢀTa = 25oCꢀandꢀnotꢀ100%ꢀtested.
DATA RETENTION WAVEFORM (CS1 Controlled)
t
SDR
Data Retention Mode
tRDR
VDD
1.65V
1.4V
VDR
CS1 ≥ VDD - 0.2V
CS1
GND
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode
V
DD
3.0
t
t
RDR
SDR
CE2
2.2V
V
DR
CS2 ≤ 0.2V
0.4V
GND
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
IS62C10248AL (4.5V - 5.5V)
Industrial Range: –40°C to +85°C
Speed (ns)
Order Part No.*
Package
ꢀ
ꢀ
55ꢀ
ꢀ
IS62C10248AL-55TLIꢀ
IS62C10248AL-55MLIꢀ
TSOP-II,ꢀLead-free
miniꢀBGA,ꢀLead-freeꢀ(9mmx11mm)
*Devices will meet 45ns when used in 0oC to +70oC temperature range.
IS65C10248AL (4.5V - 5.5V)
Industrial Range: –40°C to +125°C
Speed (ns)
Order Part No.
Package
ꢀ
ꢀ
55ꢀ
ꢀ
IS65C10248AL-55CTLA3ꢀ
IS65C10248AL-55MLA3ꢀ
TSOP-II,ꢀLead-free,ꢀCopperꢀLead-frame
miniꢀBGA,ꢀLead-freeꢀ(9mmx11mm)
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
13
Rev. 00A
09/25/09
IS62C10248AL, IS65C10248AL
14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
09/25/09
相关型号：
©2020 ICPDF网 联系我们和版权申明