IS62C512 [ISSI]

SRAM;


型号：	IS62C512
厂家：	INTEGRATED SILICON SOLUTION, INC
描述：	SRAM 静态存储器
文件：	总2页 (文件大小：22K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IS62C512

64K x 8 LOW POWER CMOS STATIC RAM

ISSI

ADVANCE

INFORMATION

JULY 1995

FEATURES

DESCRIPTION

The ISSI IS62C512 is a high-speed, low power, 65,536-word

by 8-bit CMOS static RAM. It is fabricated using ISSI's high-

performance CMOS technology. This highly reliable process

coupledwithinnovativecircuitdesigntechniques,yieldshigher

performance and low power consumption devices.

• Access time: 45, 55, 70 ns

• Low active power - 715 mW (max.)

• Low standby power

— 5.5 mW (max.) CMOS standby

• Pin compatible with 128K x 8 devices

When CE1 is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation is

reduced to 50 µW (typical) at CMOS input levels.

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

• Fully static operation: no clock or refresh

required

EasymemoryexpansionisprovidedbyusingtwoChipEnable

(CE1, CE2) inputs and an active LOW Output Enable (OE)

input. TheactiveLOWWriteEnable(WE)controlsbothwriting

and reading of the memory.

• TTL compatible inputs and outputs

• Single 5V (±10%) power supply

The IS62C512 is supplied in 32-pin Plastic SOP and

32-pin TSOP packages.

FUNCTIONAL BLOCK DIAGRAM

512 X 1024

MEMORY ARRAY

A0-A15

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CE1

CONTROL

CIRCUIT

CE2

This document contains advance information. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product.

Integrated Silicon Solution, Inc.

2-1

ADVANCE INFORMATION Rev. C 0795

SR81995C512

IS62C512

ISSI

2-2

Integrated Silicon Solution, Inc.

ADVANCE INFORMATION Rev. C 0795

SR81995C512