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IXBH28N170A [IXYS]

Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3;
IXBH28N170A
型号： IXBH28N170A
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3

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ADVANCE TECHNICAL INFORMATION  
VCES = 1700 V  
HighVoltage,HighGain  
IXBH 28N170A  
IXBT 28N170A  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
IC25  
VCE(sat)  
tfi  
=
=
30 A  
6.0 V  
= 50 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
30  
14  
60  
A
A
A
TO-247AD(IXBH)  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM  
VCES  
=
=
60  
1350  
A
V
TAB)  
Clamped inductive load  
G
C
E
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
°C  
°C  
-55 ... +150  
Features  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
z High Blocking Voltage  
z JEDEC TO-268 surface and  
JEDEC TO-247 AD  
260  
z Low conduction losses  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
z High current handling capability  
z MOS Gate turn-on  
- drive simplicity  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z AC motor speed control  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
Temperature Coefficent  
IC = 250 µA, VCE = VGE  
Temperature Coefficent  
1700  
3.0  
V
%/K  
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
0.10  
6.0  
- 0.24  
%/K  
z Capacitor discharge circuits  
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
10 µA  
100 µA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
4.7  
5.0  
6.0  
V
V
TJ = 125°C  
DS99333(02/05)  
© 2005 IXYS All rights reserved  
IXBH 28N170A  
IXBT 28N170A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; VCE = 10 V,  
12  
17  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
2800  
132  
42  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
Qg  
105  
20  
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Inches  
35  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
35  
36  
ns  
ns  
ns  
ns  
mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
265  
50  
IC = IC90, VGE = 15 V  
VCE = 850 V, RG = Roff = 10 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
1.2  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
35  
36  
ns  
ns  
mJ  
ns  
ns  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
Eon  
td(off)  
tfi  
0.7  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
290  
150  
VCE = 850 V, RG = Roff = 10 Ω  
Eoff  
2.3  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V, Pulse test,  
< 300 us, duty cycle d < 2%  
3.0  
V
t
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 50 A/us  
vR = 100 V  
25  
360  
A
ns  
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  

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