IXDI414SI [IXYS]
Buffer/Inverter Based Peripheral Driver, 14A, MOS, PDSO14, SOIC-14;
| 型号： | IXDI414SI |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Buffer/Inverter Based Peripheral Driver, 14A, MOS, PDSO14, SOIC-14 驱动 光电二极管 接口集成电路 |
| 文件： | 总10页 (文件大小：603K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers
General Description
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-UpProtectedOverEntire
OperatingRange
TheIXDI414/IXDN414arehighspeedhighcurrentgatedrivers
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current, while producing voltage rise and fall times of less
than 30ns, to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shoot-
through. Improvedspeedanddrivecapabilitiesarefurther
enhanced by very low, matched rise and fall times.
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 35V
o
o
• -55 C to 125 C Extended Operating Temperature
Standard
• High Capacitive Load
Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• LowOutputImpedance
TheIXDN414isconfiguredasanon-invertinggatedriverand
theIXDI414isaninvertinggatedriver.
• LowSupplyCurrent
Applications
• DrivingMOSFETsandIGBTs
• MotorControls
TheIXDN414/IXDI414familyareavailableinstandard8pin
P-DIP(PI),5-pinTO-220(CI),TO-263(YI)andthermally
enhanced14-pinSOIC(SI)surface-mountpackages.
• LineDrivers
• PulseGenerators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DCtoDCConverters
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
Vcc
P
ANTI-CROSS
OUT
GND
IN
CONDUCTION
CIRCUIT *
N
GND
* Patent Pending
DS99020B(08/04)
Copyright©IXYSCORPORATION2004
First Release
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram
Vcc
Vcc
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
OUT
GND
IN
GND
Pin Description And Configuration
SYMBOL
VCC
FUNCTION
Supply Voltage
Input
DESCRIPTION
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 35V.
Input signal-TTL or CMOS compatible.
IN
Driver Output. For application purposes, this pin is connected via an
external resistor to a Gate of a MOSFET/IGBT.
OUT
Output
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
GND
Ground
1
NC
NC
14
13
12
NC
I
1 VCC
VCC 8
OUT 7
OUT 6
I
X
D
(1)
4
1
4
P
I
2 NC
X
D
(1)
4
1
4
VCC
VCC
3
4
5
6
2 IN
OUT
OUT
11
10
IN
3 NC
4 GND
NC
S
I
GND 9
NC
GND
NC
GND
5
TO220(CI)
TO263(YI)
8
7
8 PIN DIP (PI)
14 PIN SOIC
ORDERING INFORMATION
Part Number Package Type Temp. Range
Configuration
IXDN414PI
IXDN414SI
IXDN414CI
IXDN414YI
IXDI414PI
IXDI414SI
IXDI414CI
IXDI414YI
8-Pin PDIP
-55°C to 125°C
14-Pin SOIC
5-Pin TO-220
5-Pin TO-263
8-Pin PDIP
14-Pin SOIC
5-Pin TO-220
5-Pin TO-263
Non Inverting
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
Inverting
-55°C to 125°C
-55°C to 125°C
NOTES 1: Either "I" or "N";
2: Mounting or solder tabs on all packages are connected to ground
* Patent Pending
2
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Value
Parameter
Value
40V
o
Supply Voltage
Maximum Junction Temperature
Operating Temperature Range
150 C
o
o
-0.3V to
-55 C to 125 C
All Other Pins
V
+ 0.3V
CC
Thermal Resistance (Junction To Case)
TO220 (CI)
Power Dissipation
o
12.5W
TO263 (YI), 14 Pin SOIC (SI)
10 K/W
TCASE 25 C: TO220 (CI), TO263 (YI)*
≤
o
Thermal Resistance (Junction to Ambient)
Power Dissipation, TAMBIENT ≤25 C
8 Pin PDIP (PI), 14 Pin SOIC
TO220 (CI) TO263 (YI)
Storage Temperature
833mW
2W
8-Pin PDIP (PI)
150 K/W
120 K/W
62.5 K/W
14-Pin SOIC
o
o
-55 C to 150 C
TO-220 (CI), TO-263 (YI)
* Subject to internal lead current limit IDC
o
Soldering Lead Temperature (10s)
Tab Temperature (10s)
300 C
o
260 C
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Symbol
VIH
Parameter
Test Conditions
Min
Typ
Max
Units
High input voltage
Low input voltage
Input voltage range
Input current
3.5
V
V
4.5V ≤ VCC ≤ 18V
4.5V ≤ VCC ≤ 18V
VIL
0.8
VCC + 0.3
10
VIN
-5
V
IIN
-10
0V ≤ VIN ≤ VCC
µA
VOH
VOL
ROH
High output voltage
Low output voltage
VCC - 0.025
V
V
0.025
1000
Output resistance
@ Output high
Output resistance
@ Output Low
IOUT = 10mA, VCC = 18V
IOUT = 10mA, VCC = 18V
VCC is 18V
600
600
14
mΩ
ROL
IPEAK
IDC
1000
mΩ
Peak output current
A
Continuous output
current
8 Pin Dip (PI) (Limited by pkg power dissipation)
TO220 (CI), TO263 (YI)
3
4
27
A
A
ns
tR
Rise time (1)
CL=15nF Vcc=18V
22
20
30
tF
Fall time (1)
CL=15nF Vcc=18V
CL=15nF Vcc=18V
25
33
ns
ns
tONDLY
On-time propagation
delay (1)
tOFFDLY
Off-time propagation
delay (1)
CL=15nF Vcc=18V
31
34
ns
VCC
ICC
Power supply voltage
4.5
18
35
V
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µ
A
µA
(1)
See Figures 3a and 3b
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Specifications subject to change without notice
3
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Figure 3a - Characteristics Test Diagram
5.0V
Vcc
0V
10uF
25V
0V
0V
IXDI414
Vcc
IXDN414
15nF
Agilent 1147A
Current Probe
Figure 3b - Timing Diagrams
Non-Inverting (IXDN414) Timing Diagram
5V
90%
INPUT
2.5V
10%
0V
PWMIN
t
OFFDLY
tONDLY
t
R
t
F
Vcc
90%
OUTPUT
10%
0V
Inverting (IXDI414) Timing Diagram
5V
90%
2.5V
INPUT
10%
0V
PWMIN
tONDLY
tOFFDLY
tF
tR
VCC
90%
OUTPUT
10%
0V
4
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Typical Performance Characteristics
Fig. 4
40
Rise Time vs. Supply Voltage
Fig. 5
Fall Time vs. Supply Voltage
40
30
20
10
0
30
20
10
CL=15,000 pF
CL=15,000 pF
7,500 pF
3,600 pF
7,500 pF
3,600 pF
0
8
8
10
12
14
16
18
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
Rise And Fall Times vs. Case Temperature
CL = 15 nF, Vcc = 18V
Fig. 6
Fig. 7 Rise Time vs. Load Capacitance
40
50
35
30
25
20
15
10
5
8V
40
30
20
10
0
10V
12V
tR
tF
18V
16V
14V
0
0k
5k
10k
15k
20k
-40
-20
0
20
40
60
80
100
120
Load Capacitance (pF)
Temperature (°C)
Fall Time vs. Load Capacitance
Fig. 9
Max / Min Input vs. Case Temperature
VCC=18V CL=15nF
Fig. 8
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
40
8V
12V
14V
Minimum Input High
Maximum Input Low
10V
30
20
10
18V
16V
-60
-40
-20
0
20
40
60
80
100
0
0k
5k
10k
15k
20k
Temperature (oC)
Load Capacitance (pF)
5
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Fig. 12
Supply Current vs. Load Capacitance
Vcc=18V
Supply Current vs. Frequency
Vcc=18V
Fig. 11
1000
1000
100
10
CL= 30 nF
15 nF
2 MHz
100
10
1
1 MHz
5000 pF
2000 pF
500 kHz
100 kHz
50 kHz
1
0.1
10
100
1000
10000
1k
10k
100k
100k
100k
Frequency (kHz)
Load Capacitance (pF)
Fig. 13
Supply Current vs. Load Capacitance
Vcc=12V
Supply Current vs. Frequency
Vcc=12V
Fig. 14
1000
1000
100
10
CL = 30 nF
15 nF
100
2 MHz
5000 pF
2000 pF
1 MHz
500 kHz
10
1
100 kHz
50 kHz
1
0.1
10
100
1000
10000
1k
10k
Frequency (kHz)
Load Capacitance (pF)
Fig. 15
Supply Current vs. Load Capacitance
Vcc=8V
Fig. 16
Supply Current vs. Frequency
Vcc=8V
1000
100
10
1000
CL= 30 nF
15 nF
100
2 MHz
5000 pF
2000 pF
1 MHz
10
500 kHz
1
100 kHz
50 kHz
1
0.1
10
100
1000
10000
1k
10k
Frequency (kHz)
Load Capacitance (pF)
6
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Propagation Delay vs. Input Voltage
Fig. 18
Fig. 17
Propagation Delay vs. Supply Voltage
CL=15nF VIN=5V@1kHz
CL=15nF VCC=15V
50
40
30
20
10
0
50
tOFFDLY
40
30
20
10
0
tONDLY
tONDLY
tOFFDLY
2
4
6
8
10
12
8
10
12
14
16
18
Input Voltage (V)
Supply Voltage (V)
Propagation Delay vs. Case Temperature
CL = 2500pF, VCC = 18V
Fig. 19
Quiescent Supply Current vs. Case Temperature
Fig. 20
VCC=18V V =5V@1kHz
IN
0.60
50
45
40
35
30
25
20
15
0.58
0.56
0.54
0.52
0.50
tONDLY
tOFFDLY
10
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
100
120
o
Temperature ( C)
Temperature (°C)
P Channel Output Current vs. Case Temperature
CC=18V CL=.1uF
Fig. 21
N Channel Output Current vs. Case Temperature
VCC=18V CL=.1uF
Fig. 22
V
16
17
16
15
14
15
14
13
12
-40
-20
0
20
40
o
60
80
100
-40
-20
0
20
40
o
60
80
100
Temperature ( C)
Temperature ( C)
7
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Fig. 24
High State Output Resistance
vs. Supply Voltage
Enable Threshold vs. Supply Voltage
Fig. 23
14
1.0
0.8
0.6
0.4
0.2
0.0
12
10
8
6
4
2
0
8
10
15
20
25
8
10
12
14
16
18
20
22
24
26
Supply Voltage (V)
Supply Voltage (V)
Low-State Output Resistance
vs. Supply Voltage
VCC vs. P Channel Output Current
CL=.1uF VIN=0-5V@1kHz
Fig. 25
Fig. 26
1.0
0
-2
-4
0.8
0.6
0.4
0.2
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
0.0
8
10
15
20
25
8
10
15
20
25
Supply Voltage (V)
Vcc
Fig. 27
Vcc vs. N Channel Output Current
CL=.1uF V =0-5V@1kHz
IN
24
22
20
18
16
14
12
10
8
6
4
2
0
8
10
15
20
25
Vcc
8
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Supply Bypassing, Grounding Practices and Output Lead inductance
When designing a circuit to drive a high speed
MOSFETutilizingtheIXDN414/IXDI414,itisvery
important to observe certain design criteria in
order to optimize performance of the driver.
Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the
Output Lead Inductance.
GROUNDING
Inorderforthedesigntoturntheloadoffproperly,
the IXDN414 must be able to drain this 5A of
currentintoanadequategroundingsystem. There
are three paths for returning current that need to
beconsidered: Path#1isbetweentheIXDN414
anditsload. Path#2isbetweentheIXDN414and
itspowersupply. Path#3isbetweentheIXDN414
and whatever logic is driving it. All three of these
paths should be as low in resistance and
inductance as possible, and thus as short as
practical. Inaddition,everyeffortshouldbemade
to keep these three ground paths distinctly
separate. Otherwise,thereturninggroundcurrent
from the load may develop a voltage that would
have a detrimental effect on the logic line driving
theIXDN414.
Say, for example, we are using the IXDN414 to
charge a 5000pF capacitive load from 0 to 25
voltsin25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V
C=5000pF & ∆t=25ns we can determine that to
charge 5000pF to 25 volts in 25ns will take a
constant current of 5A. (In reality, the charging
current won’t be constant, and will peak
somewherearound8A).
OUTPUT LEAD INDUCTANCE
SUPPLY BYPASSING
Of equal importance to Supply Bypassing and
GroundingareissuesrelatedtotheOutputLead
Inductance. Everyeffortshouldbemadetokeep
theleadsbetweenthedriverandit’sloadasshort
andwideaspossible. Ifthedrivermustbeplaced
fartherthan2”(5mm)fromtheload,thentheoutput
leadsshouldbetreatedastransmissionlines. In
this case, a twisted-pair should be considered,
and the return line of each twisted pair should be
placed as close as possible to the ground pin of
the driver, and connected directly to the ground
terminaloftheload.
Inorderforourdesigntoturntheloadonproperly,
the IXDN414 must be able to draw this 5A of
current from the power supply in the 25ns. This
means that there must be very low impedance
between the driver and the power supply. The
most common method of achieving this low
impedance is to bypass the power supply at the
driverwithacapacitancevaluethatisamagnitude
larger than the load capacitance. Usually, this
wouldbeachievedbyplacingtwodifferenttypes
of bypassing capacitors, with complementary
impedancecurves,veryclosetothedriveritself.
(These capacitors should be carefully selected,
lowinductance,lowresistance,high-pulsecurrent-
servicecapacitors). Leadlengthsmayradiateat
highfrequencyduetoinductance,socareshould
betakentokeepthelengthsoftheleadsbetween
these bypass capacitors and the IXDN414 to an
absoluteminimum.
9
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
8-PIN DIP Case Outline (IXD_414PI)
14-PIN SOIC Case Outline (IXD_414SI)
5-Leaded TO-220 Case Outline (IXD_414CI)
5-Leaded TO-263 Case Outline (IXD_414YI)
IXYS Corporation
IXYS Semiconductor GmbH
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
www.ixys.com
10
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