IXFH14N100Q2 [IXYS]
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr; N沟道增强模式额定雪崩，低的Qg低RG ，高dv / dt ，低反向恢复时间trr
| 型号： | IXFH14N100Q2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr |
| 文件： | 总4页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Data
HiPerFETTM
Power MOSFETs
VDSS
ID25
= 1000 V
IXFH14N100Q2
=
14 A
RDS(on) = 0.90 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
trr ≤ 300 ns
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
1000
1000
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
(TAB)
VGS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
IAR
T
= 25°C
14
56
14
A
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
TCC = 25°C
TAB = Drain
EAR
EAS
T
= 25°C
50
2.5
mJ
J
TCC = 25°C
Features
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on), low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
z
z
PD
TC = 25°C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
z
z
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Applications
Md
1.13/10 Nm/lb.in.
z
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Weight
6
g
z
z
z
z
Advantages
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z
Easy to mount
Space savings
High power density
min. typ. max.
z
z
VDSS
VGS = 0 V, ID = 250 µA
1000
3.0
V
V
VGS(th)
VDS = VGS, ID = 4 mA
5.0
IGSS
IDSS
VGS = 30 VDC, VDS = 0
200 nA
VDS = V
T = 25°C
25 µA
VGS = 0DVSS
TJJ = 125°C
1
mA
RDS(on)
V
= 10 V, ID = 0.5 • I
0.90
Ω
PuGSlse test, t ≤ 300 µs,Dd25uty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
DS99073(08/03)
IXFH14N100Q2
TO-247 AD (IXFH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
10
14
S
1
2
3
Terminals:
1 - Gate
Ciss
Coss
Crss
2700
300
pF
pF
pF
2 - Drain
VGS = 0 V, VDS = 25 V, f = 1 MHz
3 - Source
Tab - Drain
100
td(on)
tr
td(off)
tf
12
10
28
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
RG = 2 Ω (External),
Min.
Max.
Min.
Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
A12
Qg(on)
Qgs
83
20
40
nC
nC
nC
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
b
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.25 K/W
e
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
L1
TO-247
0.25
K/W
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
5.49
.170
.216
6.15 BSC
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
14
A
A
ISM
Repetitive; pulse width limited by TJM
56
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
300
ns
µC
A
QRM
IRM
0.8
7
IF = IS, -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH14N100Q2
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
27
24
21
18
15
12
9
14
12
10
8
VGS = 10V
8V
VGS = 10V
7V
7V
6V
5V
6
4
6V
5V
6
2
3
0
0
0
2
4
6
8
10
12
14
0
5
10
15
VDS - Volts
20
25
30
150
150
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
14
12
10
8
2.8
2.5
2.2
1. 9
1. 6
1. 3
1
VG S = 10V
7V
VG S = 10V
6V
5V
I D= 14A
6
I D = 7A
4
2
0.7
0.4
0
0
5
10
15
2 0
2 5
3 0
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
16
14
12
10
8
2.8
2.5
2.2
1. 9
VGS = 10V
TJ= 125 C
º
1. 6
6
1. 3
4
TJ= 25 C
º
1
2
0.7
0
0
3
6
9
12
15
18
2 1 2 4
2 7
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
I D - Amperes
© 2003 IXYS All rights reserved
IXFH14N100Q2
Fig. 7. Input Admittance
Fig. 8. Transconductance
21
18
15
12
9
28
24
20
16
12
8
TJ = -40 C
º
º
25 C
125 C
º
TJ= 120
25
-40
º
C
6
º
C
º
C
3
4
0
0
4
4.5
5
5.5
6
6.5
7
0
3
6
9
12
15
18
21
24
VGS - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
42
10
8
6
4
2
0
VD S = 500V
I D= 7A
I G= 10mA
35
28
21
14
7
º
TJ = 125 C
º
TJ= 25 C
0
0.3
0.5
0.7
0.9
1.1
1.3
0
10
20
30
40
50
60
70
80
90
VSD - Volts
Q G - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10 0 0 0
10 0 0
10 0
1
f = 1MHz
C
C
iss
oss
0.1
C
rss
10
0.01
0
5
10
15
20
25
30
35
40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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IXYS
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