IXFH32N50Q [IXYS]
HiPerFET⑩ Power MOSFETs Q-Class; HiPerFET⑩功率MOSFET Q系列
| 型号： | IXFH32N50Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET⑩ Power MOSFETs Q-Class |
| 文件： | 总4页 (文件大小：569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 32N50Q
IXFT 32N50Q
VDSS ID25
RDS(on)
500 V 32 A 0.16 Ω
500 V 32 A 0.16 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
AvalancheRated, LowQg,Highdv/dt
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
T
= 25°C to 150°C
500
500
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
20
30
V
V
VGSM
(TAB)
ID25
IDM
IAR
T
= 25°C
32
128
32
A
A
A
TC = 25°C; pulse width limited by TJM
TCC = 25°C
TO-268 (D3) ( IXFT)
EAR
EAS
TC = 25°C
45
mJ
mJ
1500
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
G
S
(TAB)
PD
TC = 25°C
416
W
TJ
-55 ... + 150
150
°C
°C
°C
G = Gate
D
= Drain
TJM
Tstg
S = Source
TAB = Drain
-55 ... + 150
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Md
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
z
z
Symbol
VDSS
TestConditions
Characteristic Values
International standard packages
Low RDS (on)
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
VGS = 0 V, ID = 250 uA
500
V
z
VGS(th)
IGSS
VDS = VGS, ID = 4 mA
2.5
4.5
V
VGS = 20 VDC, VDS = 0
100
nA
Advantages
IDSS
VDS = V
T = 25°C
100
1
µA
VGS = 0DVSS
TJJ = 125°C
mA
z
Easy to mount
Space savings
z
RDS(on)
V
= 10 V, ID = 0.5 ID25
0.16
Ω
NGoSte 1
z
High power density
© 2004 IXYS All rights reserved
DS98596E(02/04)
IXFH 32N50Q
IXFT 32N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, Note 1
18
28
S
1
2
3
Ciss
Coss
Crss
3950 4925
640 800
210 260
pF
pF
pF
Terminals:
1 - Gate
VGS = 0 V, VDS = 25 V, f = 1 MHz
2 - Drain
3 - Source
Tab - Drain
td(on)
tr
td(off)
tf
35
42
75
20
45
50
95
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
A12
Qg(on)
Qgs
Qgd
153 190
26 32
85 105
nC
nC
nC
b
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b12
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.30
K/W
K/W
(TO-247)
0.25
e
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
L1
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
4.32
5.49
.170
.216
6.15 BSC
242 BSC
Symbol
IS
TestConditions
VGS = 0 V
32
128
1.5
A
TO-268 Outline
ISM
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
A
V
VSD
trr
250
ns
µC
A
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.75
7.5
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXFH 32N50Q
IXFT 32N50Q
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
80
50
40
30
20
10
0
VGS=10V
TJ = 25OC
TJ = 125OC
VGS= 9V
9V
8V
7V
70
60
50
40
30
20
10
0
6V
8V
7V
6V
5V
5V
4V
0
4
8
12
16
20
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8
2.4
2.0
1.6
1.2
0.8
2.8
VGS = 10V
V
GS = 10V
2.4
2.0
1.6
1.2
0.8
Tj=1250 C
ID = 32A
ID = 16A
Tj=250 C
25
50
75
100
125
150
0
10
20
30
40
50
60
TJ - Degrees C
ID - Amperes
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
40
50
40
30
20
10
0
IXF_32N50Q
32
24
16
8
IXF_30N50Q
TJ = 25oC
TJ = 125oC
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
TC - Degrees C
VGS - Volts
© 2004 IXYS All rights reserved
IXFH 32N50Q
IXFT 32N50Q
Figure7. GateCharge
Figure8.CapacitanceCurves
14
12
10
8
10000
1000
100
F = 1MHz
Vds=300V
ID=16A
IG=10mA
Ciss
Coss
6
Crss
4
2
0
0
50
100
150
200
250
0
5
10
15
20
25
Gate Charge - nC
VDS - Volts
Figure 9. Forward Voltage Drop of the
IntrinsicDiode
100
80
60
40
20
0
VGS= 0V
TJ=125OC
TJ=25OC
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure10.TransientThermalResistance
0.40
0.20
0.10
0.08
0.06
0.04
0.02
0.01
10-3
10-2
10-1
100
101
I
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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