IXFH8N80 [IXYS]
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family; HiPerFET功率MOSFET - N沟道增强型高dv / dt ，低反向恢复时间trr ， HDMOSTM家庭
| 型号： | IXFH8N80 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family |
| 文件： | 总4页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PreliminaryDataSheet
VDSS
ID25
RDS(on)
trr
HiPerFETTM
IXFH8N80 800V
IXFH9N80 800V
8A
9A
1.1Ω
0.9Ω
250 ns
250 ns
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
TO-247 SMD*
VGSM
ID25
IDM
IAR
TC = 25°C
8N80
9N80
8N80
9N80
8N80
9N80
8
9
32
36
8
A
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
D (TAB)
G
S
9
G = Gate
D
= Drain
EAR
TC = 25°C
18
5
mJ
S = Source
TAB = Drain
*Add suffix letter "S" for surface mountable
package
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
V/ns
PD
TC = 25°C
180
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min. typ.
max.
• DC-DC converters
• Battery chargers
VDSS
VGS = 0 V, ID = 3 mA
800
V
VDSS temperature coefficient
0.088
%/K
• Switched-mode and resonant-mode
power supplies
• DC choppers
VGS(th)
VDS = VGS, ID = 2.5 mA
2
4.5
V
VGS(th) temperature coefficient
-0.257
%/K
• AC motor control
• Temperature and lighting controls
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 µA
Advantages
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
8N80
9N80
1.1
0.9
Ω
Ω
• High power density
© 1997 IXYS All rights reserved
96527A (8/97)
IXFH8N80
IXFH9N80
TO-247 AD (IXFH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
4
7
S
Ciss
Coss
Crss
2600
240
60
pF
pF
pF
td(on)
tr
td(off)
tf
35
15
70
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 Ω (External)
Qg(on)
Qgs
85 130 nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
15
40
30 nC
70 nC
Qgd
RthJC
RthCK
0.7 K/W
K/W
0.25
TO-247 SMD Outline
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0
8N80
9N80
8
9
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
8N80
9N80
32
36
A
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
1.5
V
TJ = 25°C
250 ns
400 ns
1. Gate
2. Drain
3. Source
4. Drain
TJ = 125°C
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
Dim.
Millimeter
Inches
Min. Max.
QRM
TJ = 25°C
TJ = 125°C
0.5
1.0
µC
µC
Min.
Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
IRM
TJ = 25°C
TJ = 125°C
7.5
9.0
A
A
b
b1
1.14
1.91
1.40
2.13
.045
.075
.055
.084
C
D
0.61
20.80
0.80
21.34
.024
.819
.031
.840
E
e
15.75
5.45
16.13
BSC
.620
.215 BSC
.635
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193
.106
.083
.00
.201
.114
.091
.004
.083
L1
L2
L3
L4
.075
ØP
Q
3.55
5.59
3.65
6.20
.140
.220
.144
.244
R
S
4.32
6.15
4.83
BSC
.170
.242 BSC
.190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXFH8N80
IXFH9N80
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
9
ꢀꢁꢀ9ROWV
9
ꢀꢁꢀ9ROWV
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
, ꢀꢁꢀ$P SHUHV
7 ꢀꢁꢀ' HJUHHVꢀ &
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
7 ꢀꢁꢀ' HJUHHVꢀ&
9
ꢀꢁꢀ9ROWV
© 1997 IXYS All rights reserved
IXFH8N80
IXFH9N80
Figure8.CapacitanceCurves
Figure7. GateCharge
Figure10. Forward Bias Safe Operating Area
Figure 9. Forward Voltage Drop of the Intrinsic Diode
10
1
0.1
1
10
100
Figure11.TransientThermalResistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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IXFH9N80
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXYS
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