IXFK180N10 [IXYS]
Single MOSFET Die; 单个MOSFET模
| 型号： | IXFK180N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Single MOSFET Die |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
IXFK 180N10
IXFX 180N10
VDSS = 100 V
ID25
RDS(on)
= 180 A
= 8 mW
Single MOSFET Die
trr £ 250 ns
Preliminary data sheet
PLUS247TM
(IXFX)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
D (TAB)
G
D
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
Externallead(currentlimit)
TC = 25°C, Note 1
180
76
720
180
A
A
A
A
TO-264 AA (IXFK)
IAR
TC = 25°C
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
G
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
D
S
PD
TJ
TC = 25°C
560
W
G = Gate
S = Source
D = Drain
TAB = Drain
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
• Lowpackageinductance
- easy to drive and to protect
• Fastintrinsicrectifier
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• ACmotorcontrol
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
100
2.0
V
4.0 V
• Temperatureandlightingcontrols
±100nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
Advantages
• PLUS 247TM package for clip or spring
mounting
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
8 mW
• Space savings
• Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98552B(7/99)
1 - 4
IXFK 180N10
IXFX 180N10
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM (IXFX) Outline
VDS = 10 V; ID = 60A
Note 2
60
90
S
Ciss
Coss
Crss
9100
3200
1660
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
50
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
140
65
Dim.
Millimeter
Min. Max. Min. Max.
Inches
Qg(on)
Qgs
360
65
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
190
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
RthJC
RthCK
0.22 K/W
K/W
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
Symbol
TestConditions
IS
VGS = 0 V
180
720
A
A
TO-264 AA (IXFK) Outline
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = 50A,-di/dt = 100 A/ms, VR = 50 V
QRM
IRM
1.1
13
mC
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
0.53
25.91 26.16
0.83
.021
1.020
.780
.033
1.030
.786
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFK 180N10
IXFX 180N10
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
200
200
150
100
50
VGS=10V
VGS=10V
TJ=125OC
TJ=25OC
7V
7V
6V
9V
9V
6V
8V
8V
150
100
50
5V
5V
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
VDS - Volts
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
1.8
2.0
1.8
V
GS = 10V
TJ = 125OC
1.6
1.4
1.2
1.0
0.8
ID=180A
VGS=10V
VGS=15V
1.6
1.4
TJ = 25OC
1.2
ID=90A
VGS=10V
1.0
V
GS=15V
0.8
25
0
50
100
ID - Amperes
150
200
50
75
100
125
150
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
100
100
80
60
40
20
0
75
Lead Current Limit
50
TJ = 125oC
TJ = 25oC
25
0
-50 -25
0
25 50 75 100 125 150
2
4
6
8
TC - Degrees C
VGS - Volts
© 2000 IXYS All rights reserved
3 - 4
IXFK 180N10
IXFX 180N10
Figure 7. Gate Charge
15
Figure 8. Capacitance Curves
Ciss
10000
VDS=50V
ID=90A
12
9
F = 100kHz
IG=10mA
Coss
6
3
Crss
0
1000
0
50 100 150 200 250 300 350 400
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure 10. Forward Bias Safe Operating Area
Figure 9. Forward Voltage Drop of the Intrinsic Diode
200
200
100
175
VGS= 0V
1 ms
150
125
10 ms
100
10
TJ=125OC
75
TC = 25OC
DC
TJ=25OC
50
25
0
1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDS - Volts
VSD - Volts
Figure 11. Transient Thermal Resistance
0.40
0.20
Ri:
0.02
0.046
0.154
0.10
0.08
0.06
ti:
0.04
0.007
0.01
0.25
3
0.02
0.01
R(th)JC = SRi{1-exp(-t/ti)}
i=1
10-3
10-2
10-1
Pulse Width - Seconds
100
101
© 2000 IXYS All rights reserved
4 - 4
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